DE69233266D1 - HEMT-Halbleiterbauelement - Google Patents

HEMT-Halbleiterbauelement

Info

Publication number
DE69233266D1
DE69233266D1 DE69233266T DE69233266T DE69233266D1 DE 69233266 D1 DE69233266 D1 DE 69233266D1 DE 69233266 T DE69233266 T DE 69233266T DE 69233266 T DE69233266 T DE 69233266T DE 69233266 D1 DE69233266 D1 DE 69233266D1
Authority
DE
Germany
Prior art keywords
semiconductor device
hemt semiconductor
hemt
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69233266T
Other languages
English (en)
Other versions
DE69233266T2 (de
Inventor
Masahiko Takikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69233266D1 publication Critical patent/DE69233266D1/de
Publication of DE69233266T2 publication Critical patent/DE69233266T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos
DE69233266T 1991-06-20 1992-06-19 HEMT-Halbleiterbauelement Expired - Fee Related DE69233266T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP03147741A JP3135939B2 (ja) 1991-06-20 1991-06-20 Ｈｅｍｔ型半導体装置
JP14774191 1991-06-20

Publications (2)

Publication Number Publication Date
DE69233266D1 true DE69233266D1 (de) 2004-01-15
DE69233266T2 DE69233266T2 (de) 2004-05-27

Family

ID=15437098

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69232344T Expired - Fee Related DE69232344T2 (de) 1991-06-20 1992-06-19 Halbleiterbauelement des Typs HEMT
DE69233266T Expired - Fee Related DE69233266T2 (de) 1991-06-20 1992-06-19 HEMT-Halbleiterbauelement

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69232344T Expired - Fee Related DE69232344T2 (de) 1991-06-20 1992-06-19 Halbleiterbauelement des Typs HEMT

Country Status (4)

Country Link
US (1) US5302840A (de)
EP (2) EP0519830B1 (de)
JP (1) JP3135939B2 (de)
DE (2) DE69232344T2 (de)

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JP4631103B2 (ja) * 1999-05-19 2011-02-16 ソニー株式会社 半導体装置およびその製造方法
US6864131B2 (en) * 1999-06-02 2005-03-08 Arizona State University Complementary Schottky junction transistors and methods of forming the same
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JP2006032552A (ja) 2004-07-14 2006-02-02 Toshiba Corp 窒化物含有半導体装置
US7700975B2 (en) * 2006-03-31 2010-04-20 Intel Corporation Schottky barrier metal-germanium contact in metal-germanium-metal photodetectors
US20070235877A1 (en) * 2006-03-31 2007-10-11 Miriam Reshotko Integration scheme for semiconductor photodetectors on an integrated circuit chip
JP5073968B2 (ja) * 2006-05-31 2012-11-14 住友化学株式会社 化合物半導体エピタキシャル基板およびその製造方法
US7429747B2 (en) * 2006-11-16 2008-09-30 Intel Corporation Sb-based CMOS devices
KR100894810B1 (ko) 2007-09-19 2009-04-24 전자부품연구원 고전자 이동도 트랜지스터 및 그 제조방법
US9205969B2 (en) 2007-12-11 2015-12-08 Tokitae Llc Temperature-stabilized storage systems
US9140476B2 (en) 2007-12-11 2015-09-22 Tokitae Llc Temperature-controlled storage systems
US20110127273A1 (en) 2007-12-11 2011-06-02 TOKITAE LLC, a limited liability company of the State of Delaware Temperature-stabilized storage systems including storage structures configured for interchangeable storage of modular units
US8215835B2 (en) 2007-12-11 2012-07-10 Tokitae Llc Temperature-stabilized medicinal storage systems
US9174791B2 (en) 2007-12-11 2015-11-03 Tokitae Llc Temperature-stabilized storage systems
US8485387B2 (en) * 2008-05-13 2013-07-16 Tokitae Llc Storage container including multi-layer insulation composite material having bandgap material
US8283653B2 (en) 2009-12-23 2012-10-09 Intel Corporation Non-planar germanium quantum well devices
US9447995B2 (en) 2010-02-08 2016-09-20 Tokitac LLC Temperature-stabilized storage systems with integral regulated cooling
US9372016B2 (en) 2013-05-31 2016-06-21 Tokitae Llc Temperature-stabilized storage systems with regulated cooling
KR101774933B1 (ko) 2010-03-02 2017-09-06 삼성전자 주식회사 듀얼 디플리션을 나타내는 고 전자 이동도 트랜지스터 및 그 제조방법
CN101819996B (zh) * 2010-04-16 2011-10-26 清华大学 半导体结构
KR101927411B1 (ko) * 2012-09-28 2018-12-10 삼성전자주식회사 2ｄｅｇ와 2ｄｈｇ를 이용한 반도체 소자 및 제조방법
KR101922123B1 (ko) 2012-09-28 2018-11-26 삼성전자주식회사 반도체소자 및 그 제조방법
US10374037B2 (en) 2013-02-27 2019-08-06 The University Of North Carolina At Charlotte Incoherent type-III materials for charge carriers control devices
US10203526B2 (en) 2015-07-06 2019-02-12 The University Of North Carolina At Charlotte Type III hetrojunction—broken gap HJ
US9876102B2 (en) * 2015-07-17 2018-01-23 Mitsubishi Electric Research Laboratories, Inc. Semiconductor device with multiple carrier channels
JP6261553B2 (ja) * 2015-11-27 2018-01-17 株式会社豊田中央研究所 窒化物半導体装置及びその製造方法
RU168641U1 (ru) * 2016-01-26 2017-02-13 Акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (АО "НИИПП") Конструкция высокочастотного полевого транзистора с дополнительным полевым электродом
US11139290B2 (en) * 2018-09-28 2021-10-05 Taiwan Semiconductor Manufacturing Company, Ltd. High voltage cascode HEMT device
CN110717242B (zh) * 2019-08-27 2021-11-02 西安电子科技大学 一种InP HEMT器件噪声等效电路模型建立方法
US11664419B2 (en) * 2020-10-07 2023-05-30 Applied Materials, Inc. Isolation method to enable continuous channel layer

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Also Published As

Publication number Publication date
EP1111681B1 (de) 2003-12-03
JPH05251475A (ja) 1993-09-28
EP0519830A2 (de) 1992-12-23
JP3135939B2 (ja) 2001-02-19
DE69233266T2 (de) 2004-05-27
EP0519830B1 (de) 2002-01-16
DE69232344D1 (de) 2002-02-21
EP1111681A1 (de) 2001-06-27
US5302840A (en) 1994-04-12
EP0519830A3 (en) 1993-03-10
DE69232344T2 (de) 2002-06-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee