JP6261553B2 - 窒化物半導体装置及びその製造方法 - Google Patents
窒化物半導体装置及びその製造方法 Download PDFInfo
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- JP6261553B2 JP6261553B2 JP2015232371A JP2015232371A JP6261553B2 JP 6261553 B2 JP6261553 B2 JP 6261553B2 JP 2015232371 A JP2015232371 A JP 2015232371A JP 2015232371 A JP2015232371 A JP 2015232371A JP 6261553 B2 JP6261553 B2 JP 6261553B2
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- nitride semiconductor
- potential control
- semiconductor layer
- transistor structure
- control region
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Description
300は、窒化物半導体装置100の変形例であり、ソース電極14とシリコン基板2(電位制御領域2a〜2c)の接続方法が窒化物半導体装置100と異なる。窒化物半導体装置300について、窒化物半導体装置100と同じ構造については、同じ参照番号を付すことにより説明を省略する。
2a:第1電位制御領域
2b:第2電位制御領域
12:窒化物半導体層
50a:第1トランジスタ構造
50b:第2トランジスタ構造
100:半導体装置
Claims (12)
- 導電性を有する導電性基板と、
前記導電性基板上に存在しており、横型の第1トランジスタ構造と横型の第2トランジスタ構造を含む窒化物半導体層と、を備えており、
前記導電性基板内に、前記導電性基板内を電気的に分離する基板分離領域が設けられており、
前記基板分離領域によって、前記導電性基板が、第1電位制御領域と、前記第1電位制御領域に対して独立して電位制御が可能な第2電位制御領域と、に分割されており、
前記窒化物半導体層内に、前記窒化物半導体層の表面から前記窒化物半導体層の中間部まで伸びているとともに、前記第1トランジスタ構造のチャネルと前記第2トランジスタ構造のチャネルを電気的に分断する素子分離領域が設けられており、
前記窒化物半導体層を平面視したときに、前記第1トランジスタ構造が前記第1電位制御領域と重複しており、前記第2トランジスタ構造が前記第2電位制御領域と重複している、窒化物半導体装置。 - 前記基板分離領域が、前記第1電位制御領域と前記第2電位制御領域の間に存在するトレンチである請求項1に記載の窒化物半導体装置。
- 前記窒化物半導体層を平面視したときに、前記素子分離領域が、前記基板分離領域と重複している請求項1又は2に記載の窒化物半導体装置。
- 前記導電性基板と前記窒化物半導体層の間に、前記導電性基板より高抵抗の半導体層が存在している請求項1から3のいずれか一項に記載の窒化物半導体装置。
- 前記第1トランジスタ構造に対応する一対の主電極の一方が、前記第1電位制御領域に短絡しており、
前記第2トランジスタ構造に対応する一対の主電極の一方が、前記第2電位制御領域に短絡している、請求項1から4のいずれか一項に記載の窒化物半導体装置。 - 前記窒化物半導体層の表面から前記導電性基板に至る貫通孔に充填されている導電性部材をさらに備えており、
前記導電性部材は、第1導電性部材と第2導電性部材を有しており、
前記第1トランジスタ構造の前記一方の主電極と前記第1電位制御領域が、前記第1導電性部材を介して短絡しており、
前記第2トランジスタ構造の前記一方の主電極と前記第2電位制御領域が、前記第2導電性部材を介して短絡している請求項5に記載の窒化物半導体装置。 - 前記第1トランジスタ構造と第2トランジスタ構造の少なくとも一方は、フルブリッジ回路の上アームに対応しており、
前記第1トランジスタ構造の前記一方の主電極がソース電極であり、
前記第2トランジスタ構造の前記一方の主電極がソース電極である請求項1から6のいずれか一項に記載の窒化物半導体装置。 - 前記第1トランジスタ構造と第2トランジスタ構造は、ヘテロ接合電界効果トランジスタ構造である請求項1から7のいずれか一項に記載の窒化物半導体装置。
- 前記窒化物半導体はエピタキシャル層である請求項1から8のいずれか一項に記載の窒化物半導体装置。
- 導電性基板上に窒化物半導体層を形成する窒化物半導体層形成工程と、
前記窒化物半導体層内に複数のトランジスタ構造を形成するトランジスタ形成工程と、
前記窒化物半導体層内に、前記複数のトランジスタ構造のチャネルを電気的に分断するための素子分離領域を形成する素子分離領域形成工程と、
前記導電性基板を、独立して電位制御が可能に構成されている複数の電位制御領域に分割する電位制御領域分割工程と、を備えている製造方法。 - 前記電位制御領域分割工程は、前記導電性基板の表面から裏面に至るトレンチを形成することを有する請求項10に記載の製造方法。
- 前記電位制御領域分割工程は、前記トレンチを形成するに先立って、前記導電性基板の厚みを薄くすることを有する請求項11に記載の製造方法。
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