DE69322725D1 - Halbleiterspeicheranordnung - Google Patents
HalbleiterspeicheranordnungInfo
- Publication number
- DE69322725D1 DE69322725D1 DE69322725T DE69322725T DE69322725D1 DE 69322725 D1 DE69322725 D1 DE 69322725D1 DE 69322725 T DE69322725 T DE 69322725T DE 69322725 T DE69322725 T DE 69322725T DE 69322725 D1 DE69322725 D1 DE 69322725D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1096—Write circuits, e.g. I/O line write drivers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1045—Read-write mode select circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1084—Data input buffers, e.g. comprising level conversion circuits, circuits for adapting load
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4262382A JP2812097B2 (ja) | 1992-09-30 | 1992-09-30 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69322725D1 true DE69322725D1 (de) | 1999-02-04 |
DE69322725T2 DE69322725T2 (de) | 1999-05-06 |
Family
ID=17374981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69322725T Expired - Fee Related DE69322725T2 (de) | 1992-09-30 | 1993-09-30 | Halbleiterspeicheranordnung |
Country Status (5)
Country | Link |
---|---|
US (2) | US5500820A (de) |
EP (1) | EP0591850B1 (de) |
JP (1) | JP2812097B2 (de) |
KR (1) | KR970000882B1 (de) |
DE (1) | DE69322725T2 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07334985A (ja) * | 1994-06-08 | 1995-12-22 | Mitsubishi Electric Corp | 半導体記憶装置 |
KR100224768B1 (ko) * | 1995-12-29 | 1999-10-15 | 김영환 | 외부 데이타의 입력없이 라이트 동작을 수행하는기능을 갖는 반도체 기억장치 |
JP3230435B2 (ja) * | 1996-05-17 | 2001-11-19 | 日本電気株式会社 | 半導体記憶装置 |
JP3255017B2 (ja) * | 1996-05-24 | 2002-02-12 | 日本電気株式会社 | 半導体記憶装置 |
JPH10162584A (ja) * | 1996-12-02 | 1998-06-19 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP3003613B2 (ja) * | 1997-01-31 | 2000-01-31 | 日本電気株式会社 | 半導体記憶装置 |
JP3938808B2 (ja) | 1997-12-26 | 2007-06-27 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
EP0995195A1 (de) * | 1998-02-17 | 2000-04-26 | Microchip Technology Inc. | Integrierte überwachungsschaltung mit datenspeicherung und auffindefunktion von systemparametern |
JPH11306758A (ja) * | 1998-04-27 | 1999-11-05 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
DE19828657C2 (de) * | 1998-06-26 | 2001-01-04 | Siemens Ag | Integrierter Speicher |
JP3953206B2 (ja) * | 1998-09-24 | 2007-08-08 | 富士通株式会社 | 高速クロックに対応可能な入力バッファを持つ集積回路装置 |
JP2000132969A (ja) * | 1998-10-28 | 2000-05-12 | Nec Corp | ダイナミックメモリ装置 |
JP2000163974A (ja) * | 1998-11-30 | 2000-06-16 | Nec Corp | 半導体メモリ |
JP4216415B2 (ja) * | 1999-08-31 | 2009-01-28 | 株式会社ルネサステクノロジ | 半導体装置 |
KR100415192B1 (ko) * | 2001-04-18 | 2004-01-16 | 삼성전자주식회사 | 반도체 메모리 장치에서 읽기와 쓰기 방법 및 장치 |
JP3942074B2 (ja) * | 2001-07-24 | 2007-07-11 | インターナショナル・ビジネス・マシーンズ・コーポレーション | データ入出力装置、メモリ・システム、データ入出力回路およびデータ入出力方法 |
DE10224742B4 (de) * | 2002-06-04 | 2004-07-08 | Infineon Technologies Ag | Datenverarbeitungsschaltung und Verfahren zum Übertragen von Daten |
US6879524B2 (en) * | 2002-09-19 | 2005-04-12 | Lsi Logic Corporation | Memory I/O buffer using shared read/write circuitry |
JP2005332499A (ja) * | 2004-05-20 | 2005-12-02 | Fujitsu Ltd | 半導体記憶装置 |
KR100649351B1 (ko) * | 2005-03-31 | 2006-11-27 | 주식회사 하이닉스반도체 | 저전압용 반도체 메모리 장치 |
JP2011146116A (ja) * | 2010-01-18 | 2011-07-28 | Elpida Memory Inc | 半導体記憶装置及びその制御方法 |
US8724360B2 (en) * | 2011-12-15 | 2014-05-13 | Micron Technology, Inc. | Wiring configuration of a bus system and power wires in a memory chip |
WO2017192759A1 (en) * | 2016-05-03 | 2017-11-09 | Rambus Inc. | Memory component with efficient write operations |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5570993A (en) * | 1978-11-24 | 1980-05-28 | Hitachi Ltd | Memory circuit |
US4791613A (en) * | 1983-09-21 | 1988-12-13 | Inmos Corporation | Bit line and column circuitry used in a semiconductor memory |
JPH0770222B2 (ja) * | 1984-06-04 | 1995-07-31 | 株式会社日立製作所 | Mosスタテイツク型ram |
US4618785A (en) * | 1984-09-06 | 1986-10-21 | Thomson Components - Mostek Corporation | CMOS sense amplifier with level shifter |
EP0257912A3 (de) * | 1986-08-29 | 1989-08-23 | Kabushiki Kaisha Toshiba | Statische Halbleiterspeicheranordnung |
US4961168A (en) * | 1987-02-24 | 1990-10-02 | Texas Instruments Incorporated | Bipolar-CMOS static random access memory device with bit line bias control |
JPH01119982A (ja) * | 1987-10-31 | 1989-05-12 | Toshiba Corp | スタティック型ランダムアクセスメモリ |
US4954992A (en) * | 1987-12-24 | 1990-09-04 | Mitsubishi Denki Kabushiki Kaisha | Random access memory having separate read out and write in bus lines for reduced access time and operating method therefor |
US4866674A (en) * | 1988-02-16 | 1989-09-12 | Texas Instruments Incorporated | Bitline pull-up circuit for a BiCMOS read/write memory |
JP2575449B2 (ja) * | 1988-02-18 | 1997-01-22 | 株式会社東芝 | 半導体メモリ装置 |
KR900003884A (ko) * | 1988-08-12 | 1990-03-27 | 미다 가쓰시게 | 대규모 반도체 집적회로 장치 |
JPH0766945B2 (ja) * | 1988-09-06 | 1995-07-19 | 株式会社東芝 | スタティック型メモリ |
US5048838A (en) * | 1989-03-15 | 1991-09-17 | Bridgestone Corporation | Three-piece solid golf ball |
JPH03252988A (ja) * | 1990-03-02 | 1991-11-12 | Nec Corp | ダイナミック型半導体メモリ |
US5115411A (en) * | 1990-06-06 | 1992-05-19 | Ncr Corporation | Dual port memory system |
US5043943A (en) * | 1990-06-18 | 1991-08-27 | Motorola, Inc. | Cache memory with a parity write control circuit |
JPH0589687A (ja) * | 1991-09-27 | 1993-04-09 | Nec Corp | 不揮発性半導体記憶装置 |
US5268863A (en) * | 1992-07-06 | 1993-12-07 | Motorola, Inc. | Memory having a write enable controlled word line |
KR950014255B1 (ko) * | 1992-12-31 | 1995-11-23 | 현대전자산업주식회사 | 고속동작을 위한 데이타 패스 구조를 갖는 반도체 메모리소자 |
-
1992
- 1992-09-30 JP JP4262382A patent/JP2812097B2/ja not_active Expired - Lifetime
-
1993
- 1993-09-30 US US08/129,362 patent/US5500820A/en not_active Ceased
- 1993-09-30 EP EP93115830A patent/EP0591850B1/de not_active Expired - Lifetime
- 1993-09-30 DE DE69322725T patent/DE69322725T2/de not_active Expired - Fee Related
- 1993-10-02 KR KR1019930020409A patent/KR970000882B1/ko not_active IP Right Cessation
-
1998
- 1998-03-18 US US09/040,294 patent/USRE36621E/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0591850A2 (de) | 1994-04-13 |
DE69322725T2 (de) | 1999-05-06 |
JPH06111575A (ja) | 1994-04-22 |
KR970000882B1 (ko) | 1997-01-20 |
US5500820A (en) | 1996-03-19 |
EP0591850B1 (de) | 1998-12-23 |
KR940007887A (ko) | 1994-04-28 |
USRE36621E (en) | 2000-03-21 |
JP2812097B2 (ja) | 1998-10-15 |
EP0591850A3 (de) | 1994-12-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69322311D1 (de) | Halbleiterspeicheranordnung | |
DE69322747D1 (de) | Halbleiterspeicheranordnung | |
DE69322725T2 (de) | Halbleiterspeicheranordnung | |
KR940011024U (ko) | 반도체 메모리 장치 | |
DE69427443D1 (de) | Halbleiterspeicheranordnung | |
DE69432846D1 (de) | Halbleiterspeichereinrichtung | |
DE69220101D1 (de) | Halbleiterspeichereinrichtung | |
DE69326494D1 (de) | Halbleiterspeicheranordnung | |
DE69219518D1 (de) | Halbleiterspeicheranordnung | |
DE69332966D1 (de) | Halbleiterspeicherbauelement | |
DE69322436D1 (de) | Halbleiterspeicheranordnung | |
DE69324470D1 (de) | Halbleiterspeicheranordnung | |
DE69222793T2 (de) | Halbleiterspeicheranordnung | |
DE69223333T2 (de) | Halbleiterspeicheranordnung | |
DE69325132T2 (de) | Halbleiterspeicherbauelement | |
DE69427107D1 (de) | Halbleiterspeicheranordnung | |
DE69215555D1 (de) | Halbleiterspeicheranordnung | |
DE69326108T2 (de) | Halbleiterspeicheranordung | |
DE69321544T2 (de) | Halbleiterspeicheranordnung | |
DE69423996T2 (de) | Halbleiterspeicheranordnung | |
DE69222333D1 (de) | Halbleiterspeicheranordnung | |
DE69227792D1 (de) | Halbleiter-Speicheranordnung | |
DE69420195T2 (de) | Halbleiterspeicheranordnung | |
DE69326206T2 (de) | Halbleiterspeicheranordnung | |
DE59208431D1 (de) | Integrierte Halbleiterspeicheranordnung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC CORP., TOKIO/TOKYO, JP Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8339 | Ceased/non-payment of the annual fee |