DE69635180D1 - Lichtemittierende Halbleitervorrichtung - Google Patents

Lichtemittierende Halbleitervorrichtung

Info

Publication number
DE69635180D1
DE69635180D1 DE69635180T DE69635180T DE69635180D1 DE 69635180 D1 DE69635180 D1 DE 69635180D1 DE 69635180 T DE69635180 T DE 69635180T DE 69635180 T DE69635180 T DE 69635180T DE 69635180 D1 DE69635180 D1 DE 69635180D1
Authority
DE
Germany
Prior art keywords
light
semiconductor device
emitting semiconductor
emitting
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69635180T
Other languages
English (en)
Other versions
DE69635180T2 (de
Inventor
Tadashi Takeoka
Sadayoshi Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69635180D1 publication Critical patent/DE69635180D1/de
Application granted granted Critical
Publication of DE69635180T2 publication Critical patent/DE69635180T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/305—Materials of the light emitting region containing only elements of group III and group V of the periodic system characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
DE69635180T 1995-10-02 1996-10-02 Lichtemittierende Halbleitervorrichtung Expired - Fee Related DE69635180T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25518295 1995-10-02
JP25518295A JP3135109B2 (ja) 1995-10-02 1995-10-02 半導体発光素子

Publications (2)

Publication Number Publication Date
DE69635180D1 true DE69635180D1 (de) 2005-10-20
DE69635180T2 DE69635180T2 (de) 2006-06-22

Family

ID=17275183

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69635180T Expired - Fee Related DE69635180T2 (de) 1995-10-02 1996-10-02 Lichtemittierende Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US5789773A (de)
EP (1) EP0767502B1 (de)
JP (1) JP3135109B2 (de)
KR (1) KR100247166B1 (de)
DE (1) DE69635180T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2930031B2 (ja) * 1996-09-26 1999-08-03 日本電気株式会社 半導体レーザ
JPH10214993A (ja) * 1997-01-29 1998-08-11 Hitachi Cable Ltd エピタキシャルウエハおよびその製造方法並びに発光ダイオード
JP4062648B2 (ja) * 1998-12-25 2008-03-19 シャープ株式会社 半導体レーザ及びその製造方法
JP3763459B2 (ja) 2001-06-26 2006-04-05 シャープ株式会社 半導体レーザ素子及びその製造方法
JP4027126B2 (ja) 2002-03-08 2007-12-26 シャープ株式会社 半導体レーザ素子およびその製造方法
DE10261676A1 (de) * 2002-12-31 2004-07-22 Osram Opto Semiconductors Gmbh Leuchtdioden-Chip mit strahlungsdurchlässiger elektrischer Stromaufweitungsschicht
JP2006128405A (ja) * 2004-10-28 2006-05-18 Mitsubishi Electric Corp 半導体レーザ装置
JP2006269568A (ja) * 2005-03-23 2006-10-05 Fuji Photo Film Co Ltd 半導体レーザ素子
KR101261214B1 (ko) 2006-05-18 2013-05-06 서울옵토디바이스주식회사 발광 다이오드 제조방법
JP2011091103A (ja) * 2009-10-20 2011-05-06 Shin Etsu Handotai Co Ltd 発光素子
US9865772B2 (en) 2015-01-06 2018-01-09 Apple Inc. LED structures for reduced non-radiative sidewall recombination
KR102604739B1 (ko) * 2017-01-05 2023-11-22 삼성전자주식회사 반도체 발광 장치
US11196232B2 (en) * 2019-08-19 2021-12-07 Lumentum Japan, Inc. Modulation doped semiconductor laser and manufacturing method therefor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4916708A (en) * 1989-06-26 1990-04-10 Eastman Kodak Company Semiconductor light-emitting devices
JP2564024B2 (ja) * 1990-07-09 1996-12-18 シャープ株式会社 化合物半導体発光素子
JP2950927B2 (ja) * 1990-07-17 1999-09-20 三洋電機株式会社 半導体レーザ
JPH04206585A (ja) * 1990-11-30 1992-07-28 Hitachi Ltd 半導体レーザおよびその製造方法
JP2653562B2 (ja) * 1991-02-05 1997-09-17 三菱電機株式会社 半導体レーザおよびその製造方法
JP3146501B2 (ja) * 1991-03-04 2001-03-19 日本電気株式会社 半導体レーザ及びその製造方法
JPH04283979A (ja) * 1991-03-12 1992-10-08 Hitachi Ltd 半導体レーザ
JP2863648B2 (ja) * 1991-04-16 1999-03-03 三菱電機株式会社 可視光半導体レーザ
JP3146637B2 (ja) * 1992-06-19 2001-03-19 昭和電工株式会社 エピタキシャルウェーハ及び黄色発光ダイオード
JPH06244492A (ja) * 1993-02-16 1994-09-02 Mitsubishi Electric Corp 半導体レーザ
JP3376007B2 (ja) * 1993-04-13 2003-02-10 株式会社東芝 半導体発光装置
US5617438A (en) * 1994-12-19 1997-04-01 Kabushiki Kaisha Toshiba Semiconductor laser and method for manufacturing the same

Also Published As

Publication number Publication date
EP0767502A2 (de) 1997-04-09
JP3135109B2 (ja) 2001-02-13
DE69635180T2 (de) 2006-06-22
EP0767502B1 (de) 2005-09-14
KR100247166B1 (ko) 2000-03-15
EP0767502A3 (de) 1997-10-15
US5789773A (en) 1998-08-04
JPH0997948A (ja) 1997-04-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee