DE69610457D1 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
DE69610457D1
DE69610457D1 DE69610457T DE69610457T DE69610457D1 DE 69610457 D1 DE69610457 D1 DE 69610457D1 DE 69610457 T DE69610457 T DE 69610457T DE 69610457 T DE69610457 T DE 69610457T DE 69610457 D1 DE69610457 D1 DE 69610457D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69610457T
Other languages
English (en)
Other versions
DE69610457T2 (de
Inventor
Manabu Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Application granted granted Critical
Publication of DE69610457D1 publication Critical patent/DE69610457D1/de
Publication of DE69610457T2 publication Critical patent/DE69610457T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
DE69610457T 1995-05-16 1996-05-15 Halbleitervorrichtung Expired - Lifetime DE69610457T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07116775A JP3125622B2 (ja) 1995-05-16 1995-05-16 半導体装置

Publications (2)

Publication Number Publication Date
DE69610457D1 true DE69610457D1 (de) 2000-11-02
DE69610457T2 DE69610457T2 (de) 2001-02-08

Family

ID=14695420

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69610457T Expired - Lifetime DE69610457T2 (de) 1995-05-16 1996-05-15 Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US5710508A (de)
EP (1) EP0743751B1 (de)
JP (1) JP3125622B2 (de)
DE (1) DE69610457T2 (de)

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JP3421507B2 (ja) * 1996-07-05 2003-06-30 三菱電機株式会社 半導体素子の駆動回路
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JP3516040B2 (ja) * 1997-06-02 2004-04-05 財団法人半導体研究振興会 過電流保護機能を持つゲート駆動回路
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FI105509B (fi) 1998-08-12 2000-08-31 Abb Industry Oy Ohjainpiiri
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DE10042585C1 (de) * 2000-08-30 2002-11-14 Infineon Technologies Ag Schaltungsanordnung zur Erfassung des Stromes in einem Lasttransistor
JP3793012B2 (ja) 2000-09-21 2006-07-05 松下電器産業株式会社 負荷駆動装置
JP4219567B2 (ja) * 2001-04-03 2009-02-04 三菱電機株式会社 半導体装置
JP4295928B2 (ja) * 2001-05-28 2009-07-15 三菱電機株式会社 半導体保護回路
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DE10146581C1 (de) * 2001-09-21 2003-04-24 Infineon Technologies Ag Schaltungsanordnung mit einem Halbleiterschalter und einer Schutzschaltung
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JP3883925B2 (ja) * 2002-07-30 2007-02-21 三菱電機株式会社 電力用半導体素子の駆動回路
JP2004312924A (ja) * 2003-04-09 2004-11-04 Mitsubishi Electric Corp 半導体デバイスの駆動回路
US20080198525A1 (en) * 2005-05-26 2008-08-21 Nxp B.V. Method for Current Protection of a Power Switch and Apparatus for Implementing Same
JP2007040817A (ja) * 2005-08-03 2007-02-15 Fuji Electric Device Technology Co Ltd 電力用半導体素子の異常検出装置
CN101421910B (zh) * 2006-04-06 2011-06-08 三菱电机株式会社 半导体元件的驱动电路
US7626797B2 (en) * 2006-07-24 2009-12-01 Hamilton Sundstrand Corporation Solid state power controller with lightning protection
FR2916867B1 (fr) 2007-06-01 2010-02-26 Schneider Electric Ind Sas Systeme de commande et de protection d'une sortie d'un equipement d'automatisme.
DE102008045410B4 (de) * 2007-09-05 2019-07-11 Denso Corporation Halbleitervorrichtung mit IGBT mit eingebauter Diode und Halbleitervorrichtung mit DMOS mit eingebauter Diode
JP5297641B2 (ja) * 2007-11-29 2013-09-25 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー モータ駆動回路
JP5279252B2 (ja) * 2007-12-12 2013-09-04 ローム株式会社 スイッチ出力回路
JP5129582B2 (ja) 2008-01-09 2013-01-30 日立オートモティブシステムズ株式会社 負荷駆動診断装置およびその制御方法
US7996703B2 (en) * 2008-01-31 2011-08-09 International Business Machines Corporation Method and apparatus to avoid power transients during a microprocessor test
FR2927479B1 (fr) * 2008-02-08 2012-05-04 Schneider Electric Ind Sas Systeme de commande et de protection d'une sortie en logique negative d'un equipement d'automatisme.
US8638129B2 (en) * 2008-08-20 2014-01-28 Infineon Technologies Ag Power circuit
US8169202B2 (en) * 2009-02-25 2012-05-01 Mediatek Inc. Low dropout regulators
JP5195547B2 (ja) * 2009-03-13 2013-05-08 富士電機株式会社 半導体装置
JP5223758B2 (ja) * 2009-04-06 2013-06-26 株式会社デンソー 電力変換回路の駆動回路
KR101620345B1 (ko) * 2009-04-07 2016-05-12 삼성전자주식회사 Ｌｄｏ 레귤레이터 및 이를 구비하는 반도체 장치
US8218281B2 (en) * 2009-05-18 2012-07-10 Hamilton Sundstrand Corporation Control circuit for controlling a semiconductor switch system
JP4928588B2 (ja) * 2009-07-08 2012-05-09 パナソニック電工Ｓｕｎｘ竜野株式会社 Ｄ／ａ変換装置
JP5115829B2 (ja) * 2010-06-09 2013-01-09 株式会社デンソー スイッチング装置
JP5724281B2 (ja) * 2010-10-08 2015-05-27 富士電機株式会社 パワー半導体デバイスの電流検出回路
US8513935B2 (en) * 2010-12-16 2013-08-20 Integrated Device Technology, Inc. Combinations of current feedback for frequency compensation, overload detection, and super overload detection in switching power converters
US8614870B2 (en) 2011-01-14 2013-12-24 Hamilton Sundstrand Corporation Active transient current control in electronic circuit breakers
JP5430608B2 (ja) * 2011-04-27 2014-03-05 カルソニックカンセイ株式会社 半導体スイッチング素子駆動回路
JP5796450B2 (ja) * 2011-10-18 2015-10-21 富士電機株式会社 スイッチングデバイスの制御装置
US20140029152A1 (en) * 2012-03-30 2014-01-30 Semisouth Laboratories, Inc. Solid-state circuit breakers
CN104170255B (zh) 2012-06-22 2017-09-19 富士电机株式会社 过电流检测装置及使用其的智能功率模块
FR3000322B1 (fr) * 2012-12-21 2016-05-20 Schneider Electric Ind Sas Dispositif de protection contre une surintensite electrique d'au moins une branche electronique de commutation, systeme de conversion comportant un tel dispositif de protection, et procede de pilotage associe
JP6104660B2 (ja) * 2013-03-21 2017-03-29 本田技研工業株式会社 短絡電流保護装置
JP6090012B2 (ja) * 2013-07-01 2017-03-08 トヨタ自動車株式会社 電力変換装置の保護装置
CN104767181B (zh) * 2014-01-02 2018-03-27 广东美的制冷设备有限公司 静电保护装置、智能功率模块和变频家电
JP6299177B2 (ja) * 2013-11-25 2018-03-28 シンフォニアテクノロジー株式会社 半導体装置
DE102014202611A1 (de) * 2014-02-13 2015-08-13 Robert Bosch Gmbh Schaltungsanordnung und Verfahren zur Strommessung
DE102014202610A1 (de) * 2014-02-13 2015-08-13 Robert Bosch Gmbh Stromdetektionseinrichtung und Verfahren zum Erfassen eines elektrischen Stroms
JP6582471B2 (ja) * 2014-04-01 2019-10-02 富士電機株式会社 電圧駆動形パワー半導体素子のゲート駆動回路
US9891249B2 (en) 2014-05-28 2018-02-13 Nxp B.V. Broad-range current measurement using duty cycling
US9720020B2 (en) * 2014-05-28 2017-08-01 Nxp B.V. Broad-range current measurement using variable resistance
CN104052248B (zh) * 2014-06-25 2016-08-24 台达电子企业管理（上海）有限公司 电力变换装置及其保护信号传递方法
JP6549451B2 (ja) * 2015-09-02 2019-07-24 ルネサスエレクトロニクス株式会社 半導体集積回路装置および電子装置
CN106627428B (zh) * 2015-11-04 2019-04-12 法雷奥电机设备公司 机动车辆的驱动模块和控制单元
JP2018093684A (ja) * 2016-12-07 2018-06-14 ルネサスエレクトロニクス株式会社 半導体装置および電力変換装置
TWI619322B (zh) * 2016-12-30 2018-03-21 新唐科技股份有限公司 電源開關裝置
CN106648020A (zh) * 2017-01-05 2017-05-10 郑州云海信息技术有限公司 一种防止过流保护误动作的方法及装置
CN110785933B (zh) * 2017-07-03 2023-10-13 三菱电机株式会社 半导体开关元件的短路保护电路
CN108847835B (zh) * 2018-06-27 2022-02-01 深圳市汇北川电子技术有限公司 一种功率器件驱动保护电路及其控制方法
JP7156160B2 (ja) * 2019-04-23 2022-10-19 株式会社デンソー 半導体素子の検査方法
CN114450876A (zh) * 2020-03-31 2022-05-06 富士电机株式会社 半导体装置

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JPH0683042B2 (ja) * 1986-03-31 1994-10-19 株式会社東芝 出力ドライバ回路
DE68925163T2 (de) * 1988-08-12 1996-08-08 Hitachi Ltd Treiberschaltung für Transistor mit isoliertem Gate; und deren Verwendung in einem Schalterkreis, einer Stromschalteinrichtung, und einem Induktionsmotorsystem
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JP3070360B2 (ja) * 1993-10-28 2000-07-31 富士電機株式会社 ダブルゲ−ト型半導体装置の制御装置
EP0730347A3 (de) * 1992-03-18 1996-10-23 Fuji Electric Co Ltd Halbleitervorrichtung
JPH05327440A (ja) * 1992-05-19 1993-12-10 Fuji Electric Co Ltd 駆動装置
JP3084982B2 (ja) * 1992-11-25 2000-09-04 富士電機株式会社 半導体装置
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US5550702A (en) * 1994-11-21 1996-08-27 Texas Instruments Incorporated Adaptive duty-cycle limiting for overload protection of integrated circuits

Also Published As

Publication number Publication date
US5710508A (en) 1998-01-20
JPH08316808A (ja) 1996-11-29
DE69610457T2 (de) 2001-02-08
EP0743751A2 (de) 1996-11-20
EP0743751A3 (de) 1998-04-08
JP3125622B2 (ja) 2001-01-22
EP0743751B1 (de) 2000-09-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: FUJI ELECTRIC SYSTEMS CO., LTD., TOKYO/TOKIO, JP