DE69610068T2 - Halbleiter-versorgungseinrichtung - Google Patents

Halbleiter-versorgungseinrichtung

Info

Publication number
DE69610068T2
DE69610068T2 DE1996610068 DE69610068T DE69610068T2 DE 69610068 T2 DE69610068 T2 DE 69610068T2 DE 1996610068 DE1996610068 DE 1996610068 DE 69610068 T DE69610068 T DE 69610068T DE 69610068 T2 DE69610068 T2 DE 69610068T2
Authority
DE
Grant status
Grant
Patent type
Prior art keywords
supply device
semiconductor supply
semiconductor
device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE1996610068
Other languages
English (en)
Other versions
DE69610068D1 (de )
Inventor
Timothy Moody
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7804Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0688Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692Surface layout
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692Surface layout
    • H01L29/0696Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095Body region, i.e. base region, of DMOS transistors or IGBTs
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402Field plates
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE1996610068 1995-06-30 1996-05-31 Halbleiter-versorgungseinrichtung Expired - Lifetime DE69610068T2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB9513420A GB9513420D0 (en) 1995-06-30 1995-06-30 Power semiconductor devices
PCT/IB1996/000527 WO1997002592A3 (en) 1995-06-30 1996-05-31 Power semiconductor devices

Publications (1)

Publication Number Publication Date
DE69610068T2 true DE69610068T2 (de) 2001-04-12

Family

ID=10776974

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1996610068 Expired - Fee Related DE69610068D1 (de) 1995-06-30 1996-05-31 Halbleiter-versorgungseinrichtung
DE1996610068 Expired - Lifetime DE69610068T2 (de) 1995-06-30 1996-05-31 Halbleiter-versorgungseinrichtung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE1996610068 Expired - Fee Related DE69610068D1 (de) 1995-06-30 1996-05-31 Halbleiter-versorgungseinrichtung

Country Status (6)

Country Link
US (1) US5726481A (de)
EP (1) EP0783766B1 (de)
JP (1) JPH10505714A (de)
DE (2) DE69610068D1 (de)
GB (1) GB9513420D0 (de)
WO (1) WO1997002592A3 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005043270A1 (de) * 2005-09-12 2007-03-15 Infineon Technologies Ag Vorrichtung zur Temperaturüberwachung von planaren Feldeffekttransistoren sowie zugehöriges Herstellungsverfahren
US8373244B2 (en) 2007-12-31 2013-02-12 Globalfoundries Inc. Temperature monitoring in a semiconductor device by thermocouples distributed in the contact structure

Families Citing this family (30)

* Cited by examiner, † Cited by third party
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JP3234861B2 (ja) * 1996-06-13 2001-12-04 株式会社日立カーエンジニアリング 乗物の電源供給装置及び集約配線装置
DE19644193C2 (de) * 1996-10-24 2001-04-19 Bosch Gmbh Robert Integrierte Überlastschutzeinrichtung mit Temperatursensor
US6013934A (en) * 1997-03-18 2000-01-11 Lucent Technologies Inc. Semiconductor structure for thermal shutdown protection
US6236098B1 (en) * 1997-04-16 2001-05-22 Texas Instruments Incorporated Heat spreader
EP0927433B1 (de) * 1997-07-19 2005-11-16 Philips Electronics N.V. Halbleitervorrichtung -anordnung und -schaltungen
GB9716838D0 (en) * 1997-08-08 1997-10-15 Philips Electronics Nv Temperature sensing circuits
DE19821834A1 (de) * 1998-05-15 1999-11-25 Fahrzeugklimaregelung Gmbh Power-Mos-Transistor
GB9818044D0 (en) * 1998-08-20 1998-10-14 Koninkl Philips Electronics Nv Power transistor device
US6133616A (en) * 1998-10-02 2000-10-17 International Rectifier Corp. Tempsense FET with implanted line of diodes (EPS)
DE19901384A1 (de) * 1999-01-15 2000-07-27 Siemens Ag Elektronisches Bauelement und Verwendung einer darin enthaltenen Schutzstruktur
JP2002009284A (ja) * 2000-06-19 2002-01-11 Mitsubishi Electric Corp 電力用半導体素子及び電力用半導体装置
GB0018028D0 (en) 2000-07-24 2000-09-13 Koninkl Philips Electronics Nv Semiconductor devices and their manufacture
JP4620889B2 (ja) * 2001-03-22 2011-01-26 三菱電機株式会社 電力用半導体装置
US6930371B2 (en) * 2003-02-03 2005-08-16 International Rectifier Corporation Temperature-sensing diode
JP3869815B2 (ja) * 2003-03-31 2007-01-17 Necエレクトロニクス株式会社 半導体集積回路装置
EP1467459A1 (de) * 2003-04-11 2004-10-13 Philips Electronics N.V. Verfahren und Vorrichtung zur Schützung einer integrierten Schaltung
DE10355333B3 (de) * 2003-11-27 2005-06-30 Infineon Technologies Ag Einrichtung und Verfahren zum Nachweis einer Überhitzung eines Halbleiter-Bauelements
DE10360513B4 (de) * 2003-12-22 2005-10-06 Infineon Technologies Ag Integrierter Halbleiterschaltungschip mit verbesserter Hochstrom- und Wärmeleitungsfähigkeit
JP4535367B2 (ja) * 2004-05-24 2010-09-01 ルネサスエレクトロニクス株式会社 集積回路装置
US7680622B2 (en) * 2005-04-13 2010-03-16 Freescale Semiconductor, Inc. Protection of an integrated circuit and method thereof
WO2007006337A1 (en) 2005-07-13 2007-01-18 Freescale Semiconductor, Inc. A temperature sensing device
DE102007015295B4 (de) * 2007-03-29 2013-05-16 Infineon Technologies Ag Leistungshalbleiterbauelement mit Temperatursensor und Verfahren zur Herstellung eines Leistungshalbleiterbauelements mit einem integrierten Temperatursensor
US8183658B2 (en) * 2007-05-29 2012-05-22 Cobham Electronic Systems Corporation Field-effect transistor (FET) with embedded diode
US7732848B2 (en) * 2007-05-31 2010-06-08 Infineon Technologies Ag Power semiconductor device with improved heat dissipation
US7857509B2 (en) * 2007-08-22 2010-12-28 Gm Global Technology Operations, Inc. Temperature sensing arrangements for power electronic devices
US8118486B2 (en) * 2008-09-04 2012-02-21 AGlobal Tech, LLC Very high speed temperature probe
DE102008046734A1 (de) * 2008-09-11 2010-03-18 Osram Gesellschaft mit beschränkter Haftung Verfahren und Schaltungsanordnung zur Erhöhung der Spannungsfestigkeit von Metalloxidtransistoren bei niedrigen Temperaturen
JP5547429B2 (ja) * 2009-06-19 2014-07-16 ルネサスエレクトロニクス株式会社 半導体装置
US9048838B2 (en) 2013-10-30 2015-06-02 Infineon Technologies Austria Ag Switching circuit
US9525063B2 (en) 2013-10-30 2016-12-20 Infineon Technologies Austria Ag Switching circuit

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JPH0414505B2 (de) * 1982-07-14 1992-03-13 Fujitsu Ltd
DE3310643C2 (de) * 1983-03-24 1986-04-10 Karlheinz Dr. 7801 Schallstadt De Ziegler
JPH0693485B2 (ja) * 1985-11-29 1994-11-16 日本電装株式会社 半導体装置
US4984200A (en) * 1987-11-30 1991-01-08 Hitachi, Ltd. Semiconductor circuit device having a plurality of SRAM type memory cell arrangement
US5050238A (en) * 1988-07-12 1991-09-17 Sanyo Electric Co., Ltd. Shielded front end receiver circuit with IF amplifier on an IC
US4918554A (en) * 1988-09-27 1990-04-17 International Business Machines Corporation Process for making a shielded magnetoresistive sensor
DE69024121T2 (de) * 1989-07-19 1996-05-09 Fuji Electric Co Ltd Übertemperatur-Detektorschaltung zur Verwendung mit einer integrierten Leistungsschaltung
US5025298A (en) * 1989-08-22 1991-06-18 Motorola, Inc. Semiconductor structure with closely coupled substrate temperature sense element
GB2248151A (en) * 1990-09-24 1992-03-25 Philips Electronic Associated Temperature sensing and protection circuit.
EP0488088B1 (de) * 1990-11-26 2000-08-02 Fuji Electric Co., Ltd. Übertemperatur-Detektorschaltung zur Detektierung der Übertemperatur einer Leistungsschaltung
GB9115694D0 (en) * 1991-07-19 1991-09-04 Philips Electronic Associated A temperature sensing device and a temperature sensing circuit using such a device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005043270A1 (de) * 2005-09-12 2007-03-15 Infineon Technologies Ag Vorrichtung zur Temperaturüberwachung von planaren Feldeffekttransistoren sowie zugehöriges Herstellungsverfahren
DE102005043270B4 (de) * 2005-09-12 2011-06-22 Infineon Technologies AG, 81669 Vorrichtung zur Temperaturüberwachung von planaren Feldeffekttransistoren sowie zugehöriges Herstellungsverfahren
US8373244B2 (en) 2007-12-31 2013-02-12 Globalfoundries Inc. Temperature monitoring in a semiconductor device by thermocouples distributed in the contact structure

Also Published As

Publication number Publication date Type
WO1997002592A2 (en) 1997-01-23 application
WO1997002592A3 (en) 1997-02-27 application
EP0783766A2 (de) 1997-07-16 application
EP0783766B1 (de) 2000-08-30 grant
US5726481A (en) 1998-03-10 grant
DE69610068D1 (de) 2000-10-05 grant
JPH10505714A (ja) 1998-06-02 application
GB9513420D0 (en) 1995-09-06 application

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