DE69610068D1 - Halbleiter-versorgungseinrichtung - Google Patents

Halbleiter-versorgungseinrichtung

Info

Publication number
DE69610068D1
DE69610068D1 DE69610068T DE69610068T DE69610068D1 DE 69610068 D1 DE69610068 D1 DE 69610068D1 DE 69610068 T DE69610068 T DE 69610068T DE 69610068 T DE69610068 T DE 69610068T DE 69610068 D1 DE69610068 D1 DE 69610068D1
Authority
DE
Germany
Prior art keywords
supply device
semiconductor supply
semiconductor
supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69610068T
Other languages
English (en)
Other versions
DE69610068T2 (de
Inventor
Timothy Moody
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69610068D1 publication Critical patent/DE69610068D1/de
Application granted granted Critical
Publication of DE69610068T2 publication Critical patent/DE69610068T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE69610068T 1995-06-30 1996-05-31 Halbleiter-versorgungseinrichtung Expired - Fee Related DE69610068T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9513420.1A GB9513420D0 (en) 1995-06-30 1995-06-30 Power semiconductor devices
PCT/IB1996/000527 WO1997002592A2 (en) 1995-06-30 1996-05-31 Power semiconductor devices

Publications (2)

Publication Number Publication Date
DE69610068D1 true DE69610068D1 (de) 2000-10-05
DE69610068T2 DE69610068T2 (de) 2001-04-12

Family

ID=10776974

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69610068T Expired - Fee Related DE69610068T2 (de) 1995-06-30 1996-05-31 Halbleiter-versorgungseinrichtung

Country Status (7)

Country Link
US (1) US5726481A (de)
EP (1) EP0783766B1 (de)
JP (1) JPH10505714A (de)
KR (1) KR970705834A (de)
DE (1) DE69610068T2 (de)
GB (1) GB9513420D0 (de)
WO (1) WO1997002592A2 (de)

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JP3234861B2 (ja) * 1996-06-13 2001-12-04 株式会社日立製作所 乗物の電源供給装置及び集約配線装置
DE19644193C2 (de) * 1996-10-24 2001-04-19 Bosch Gmbh Robert Integrierte Überlastschutzeinrichtung mit Temperatursensor
US6013934A (en) * 1997-03-18 2000-01-11 Lucent Technologies Inc. Semiconductor structure for thermal shutdown protection
US6236098B1 (en) * 1997-04-16 2001-05-22 Texas Instruments Incorporated Heat spreader
EP0927433B1 (de) * 1997-07-19 2005-11-16 Koninklijke Philips Electronics N.V. Halbleitervorrichtung -anordnung und -schaltungen
GB9716838D0 (en) * 1997-08-08 1997-10-15 Philips Electronics Nv Temperature sensing circuits
DE19821834A1 (de) 1998-05-15 1999-11-25 Fahrzeugklimaregelung Gmbh Power-Mos-Transistor
GB9818044D0 (en) * 1998-08-20 1998-10-14 Koninkl Philips Electronics Nv Power transistor device
US6133616A (en) * 1998-10-02 2000-10-17 International Rectifier Corp. Tempsense FET with implanted line of diodes (EPS)
DE19901384A1 (de) 1999-01-15 2000-07-27 Siemens Ag Elektronisches Bauelement und Verwendung einer darin enthaltenen Schutzstruktur
JP2002009284A (ja) * 2000-06-19 2002-01-11 Mitsubishi Electric Corp 電力用半導体素子及び電力用半導体装置
GB0018028D0 (en) 2000-07-24 2000-09-13 Koninkl Philips Electronics Nv Semiconductor devices and their manufacture
JP4620889B2 (ja) * 2001-03-22 2011-01-26 三菱電機株式会社 電力用半導体装置
US6930371B2 (en) * 2003-02-03 2005-08-16 International Rectifier Corporation Temperature-sensing diode
JP3869815B2 (ja) * 2003-03-31 2007-01-17 Ｎｅｃエレクトロニクス株式会社 半導体集積回路装置
EP1467459A1 (de) * 2003-04-11 2004-10-13 Koninklijke Philips Electronics N.V. Verfahren und Vorrichtung zur Schützung einer integrierten Schaltung
DE10355333B3 (de) * 2003-11-27 2005-06-30 Infineon Technologies Ag Einrichtung und Verfahren zum Nachweis einer Überhitzung eines Halbleiter-Bauelements
DE10360513B4 (de) * 2003-12-22 2005-10-06 Infineon Technologies Ag Integrierter Halbleiterschaltungschip mit verbesserter Hochstrom- und Wärmeleitungsfähigkeit
JP4535367B2 (ja) * 2004-05-24 2010-09-01 ルネサスエレクトロニクス株式会社 集積回路装置
WO2006108444A1 (en) * 2005-04-13 2006-10-19 Freescale Semiconductor, Inc Protection of an integrated circuit and method therefor
WO2007006337A1 (en) * 2005-07-13 2007-01-18 Freescale Semiconductor, Inc. A temperature sensing device
DE102005043270B4 (de) * 2005-09-12 2011-06-22 Infineon Technologies AG, 81669 Vorrichtung zur Temperaturüberwachung von planaren Feldeffekttransistoren sowie zugehöriges Herstellungsverfahren
DE102007015295B4 (de) * 2007-03-29 2013-05-16 Infineon Technologies Ag Leistungshalbleiterbauelement mit Temperatursensor und Verfahren zur Herstellung eines Leistungshalbleiterbauelements mit einem integrierten Temperatursensor
US8183658B2 (en) * 2007-05-29 2012-05-22 Cobham Electronic Systems Corporation Field-effect transistor (FET) with embedded diode
US7732848B2 (en) * 2007-05-31 2010-06-08 Infineon Technologies Ag Power semiconductor device with improved heat dissipation
US7857509B2 (en) * 2007-08-22 2010-12-28 Gm Global Technology Operations, Inc. Temperature sensing arrangements for power electronic devices
DE102007063228B4 (de) * 2007-12-31 2021-01-21 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Temperaturüberwachung in einem Halbleiterbauelement durch Thermoelemente, die in der Kontaktstruktur verteilt sind
US8118486B2 (en) * 2008-09-04 2012-02-21 AGlobal Tech, LLC Very high speed temperature probe
DE102008046734A1 (de) * 2008-09-11 2010-03-18 Osram Gesellschaft mit beschränkter Haftung Verfahren und Schaltungsanordnung zur Erhöhung der Spannungsfestigkeit von Metalloxidtransistoren bei niedrigen Temperaturen
JP5547429B2 (ja) * 2009-06-19 2014-07-16 ルネサスエレクトロニクス株式会社 半導体装置
US9048838B2 (en) 2013-10-30 2015-06-02 Infineon Technologies Austria Ag Switching circuit
US9525063B2 (en) 2013-10-30 2016-12-20 Infineon Technologies Austria Ag Switching circuit
US10247616B2 (en) * 2015-03-05 2019-04-02 Renesas Electronics Corporation Electronics device
TW201721832A (zh) * 2015-12-10 2017-06-16 力智電子股份有限公司 具熱感測功能的功率金氧半電晶體晶粒以及積體電路
DE102016104256B3 (de) * 2016-03-09 2017-07-06 Infineon Technologies Ag Transistorzellen und Kompensationsstruktur aufweisende Halbleitervorrichtung mit breitem Bandabstand
JP6627973B2 (ja) * 2016-06-03 2020-01-08 富士電機株式会社 半導体装置
JP6740982B2 (ja) * 2017-08-21 2020-08-19 株式会社デンソー 半導体装置
WO2019039304A1 (ja) * 2017-08-21 2019-02-28 株式会社デンソー 半導体装置およびその製造方法
JP6740983B2 (ja) * 2017-08-21 2020-08-19 株式会社デンソー 半導体装置
CN111816652A (zh) * 2020-05-27 2020-10-23 华为技术有限公司 一种集成有温度传感器的igbt芯片
CN114093934B (zh) * 2022-01-20 2022-05-20 深圳市威兆半导体有限公司 一种igbt器件及其制造方法

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Also Published As

Publication number Publication date
KR970705834A (ko) 1997-10-09
EP0783766A2 (de) 1997-07-16
JPH10505714A (ja) 1998-06-02
WO1997002592A3 (en) 1997-02-27
EP0783766B1 (de) 2000-08-30
DE69610068T2 (de) 2001-04-12
WO1997002592A2 (en) 1997-01-23
US5726481A (en) 1998-03-10
GB9513420D0 (en) 1995-09-06

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