DE69001548D1 - Lichtemittierende halbleitervorrichtung. - Google Patents

Lichtemittierende halbleitervorrichtung.

Info

Publication number
DE69001548D1
DE69001548D1 DE9090124199T DE69001548T DE69001548D1 DE 69001548 D1 DE69001548 D1 DE 69001548D1 DE 9090124199 T DE9090124199 T DE 9090124199T DE 69001548 T DE69001548 T DE 69001548T DE 69001548 D1 DE69001548 D1 DE 69001548D1
Authority
DE
Germany
Prior art keywords
light
semiconductor device
emitting semiconductor
emitting
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE9090124199T
Other languages
English (en)
Other versions
DE69001548T2 (de
Inventor
Kazuyoshi Hasegawa
Mitsuo Ishii
Masayuki Kubota
Seiichi Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69001548D1 publication Critical patent/DE69001548D1/de
Application granted granted Critical
Publication of DE69001548T2 publication Critical patent/DE69001548T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4212—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element being a coupling medium interposed therebetween, e.g. epoxy resin, refractive index matching material, index grease, matching liquid or gel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)
DE9090124199T 1990-07-16 1990-12-14 Lichtemittierende halbleitervorrichtung. Expired - Lifetime DE69001548T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2189917A JP2792722B2 (ja) 1990-07-16 1990-07-16 半導体発光装置

Publications (2)

Publication Number Publication Date
DE69001548D1 true DE69001548D1 (de) 1993-06-09
DE69001548T2 DE69001548T2 (de) 1993-09-09

Family

ID=16249375

Family Applications (1)

Application Number Title Priority Date Filing Date
DE9090124199T Expired - Lifetime DE69001548T2 (de) 1990-07-16 1990-12-14 Lichtemittierende halbleitervorrichtung.

Country Status (5)

Country Link
US (1) US5105237A (de)
EP (1) EP0466975B1 (de)
JP (1) JP2792722B2 (de)
KR (1) KR950000112B1 (de)
DE (1) DE69001548T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5488623A (en) * 1990-11-07 1996-01-30 Fuji Electric Co., Ltd. Mold-type semiconductor laser device with reduced light-emitting point displacement during operation
US5444726A (en) * 1990-11-07 1995-08-22 Fuji Electric Co., Ltd. Semiconductor laser device
TW253996B (de) * 1992-04-07 1995-08-11 Fuji Electric Co Ltd
US5367530A (en) * 1992-05-29 1994-11-22 Sanyo Electric Co., Ltd. Semiconductor laser apparatus
JP2565279B2 (ja) * 1992-09-25 1996-12-18 日本電気株式会社 光結合構造
US5414293A (en) * 1992-10-14 1995-05-09 International Business Machines Corporation Encapsulated light emitting diodes
EP0592746B1 (de) * 1992-10-14 1997-03-19 International Business Machines Corporation Gekapselte, lichtemittierende Diode und Kapselungsverfahren
US5516727A (en) * 1993-04-19 1996-05-14 International Business Machines Corporation Method for encapsulating light emitting diodes
JPH09307144A (ja) * 1996-05-14 1997-11-28 Matsushita Electric Ind Co Ltd 発光素子及びその製造方法
DE19714170C1 (de) * 1997-03-21 1998-07-30 Siemens Ag Elektrooptisches Modul
JP2001021775A (ja) 1999-07-09 2001-01-26 Sumitomo Electric Ind Ltd 光学装置
US6999237B2 (en) * 2001-09-12 2006-02-14 Lightmaster Systems, Inc. Method and apparatus for configuration and assembly of a video projection light management system
US20030151832A1 (en) * 2002-01-14 2003-08-14 Arthur Berman Method and apparatus for enclosing optical assemblies
WO2003027743A1 (de) * 2001-09-14 2003-04-03 Infineon Technologies Ag Sende- und/oder empfangsanordnung zur optischen signalübertragung
EP1754986B1 (de) 2002-04-01 2012-12-05 Ibiden Co., Ltd. Optische Kommunikationseinrichtung und Herstellungsverfahren für eine optische Kommunikationsvorrichtung
JPWO2005052666A1 (ja) * 2003-11-27 2008-03-06 イビデン株式会社 Ｉｃチップ実装用基板、マザーボード用基板、光通信用デバイス、ｉｃチップ実装用基板の製造方法、および、マザーボード用基板の製造方法
JP2008032522A (ja) * 2006-07-28 2008-02-14 Nitta Ind Corp 光ファイバを用いた触覚センサ
US10564335B2 (en) 2015-04-10 2020-02-18 Hewlett Packard Enterprise Development Lp Overmolded filters

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE226431C (de) *
JPS5333436A (en) * 1976-09-09 1978-03-29 Toshiba Corp Alloy for high frequency induction heating vessel
US4478588A (en) * 1978-03-06 1984-10-23 Amp Incorporated Light emitting diode assembly
JPS54127691A (en) * 1978-03-28 1979-10-03 Toshiba Corp Semiconductor light emission device
JPS5545236U (de) * 1978-09-16 1980-03-25
DE2913262C2 (de) * 1979-04-03 1982-04-29 Kabelwerke Reinshagen Gmbh, 5600 Wuppertal Elektro-optische Verbindungsvorrichtung
JPS566038U (de) * 1979-06-25 1981-01-20
DE3016103A1 (de) * 1980-04-25 1981-10-29 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung transparenter geissharze
JPS5850572A (ja) * 1981-09-22 1983-03-25 株式会社東芝 デイスプレイ装置の製造方法
EP0114258A1 (de) * 1982-11-30 1984-08-01 Kabushiki Kaisha Toshiba Kunstharzgekapselte lichtelektrische Halbleiteranordnungen
JPH084155B2 (ja) * 1986-06-25 1996-01-17 松下電器産業株式会社 光コネクタモジユ−ル
JPS6314489A (ja) * 1986-07-04 1988-01-21 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS6333877A (ja) * 1986-07-29 1988-02-13 Omron Tateisi Electronics Co 光半導体装置
JP2504533B2 (ja) * 1988-09-02 1996-06-05 同和鉱業株式会社 Ｌｅｄ発光装置並びに該装置に用いる発光ブロックの製造方法

Also Published As

Publication number Publication date
US5105237A (en) 1992-04-14
EP0466975A1 (de) 1992-01-22
JP2792722B2 (ja) 1998-09-03
EP0466975B1 (de) 1993-05-05
JPH0474483A (ja) 1992-03-09
KR950000112B1 (ko) 1995-01-09
DE69001548T2 (de) 1993-09-09
KR920003566A (ko) 1992-02-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)