DE69102836D1 - Halbleitersensor. - Google Patents

Halbleitersensor.

Info

Publication number
DE69102836D1
DE69102836D1 DE69102836T DE69102836T DE69102836D1 DE 69102836 D1 DE69102836 D1 DE 69102836D1 DE 69102836 T DE69102836 T DE 69102836T DE 69102836 T DE69102836 T DE 69102836T DE 69102836 D1 DE69102836 D1 DE 69102836D1
Authority
DE
Germany
Prior art keywords
semiconductor sensor
semiconductor
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69102836T
Other languages
English (en)
Other versions
DE69102836T2 (de
Inventor
Toshiro Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Publication of DE69102836D1 publication Critical patent/DE69102836D1/de
Application granted granted Critical
Publication of DE69102836T2 publication Critical patent/DE69102836T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
DE69102836T 1990-08-03 1991-08-01 Halbleitersensor. Expired - Fee Related DE69102836T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2205072A JP2560140B2 (ja) 1990-08-03 1990-08-03 半導体装置

Publications (2)

Publication Number Publication Date
DE69102836D1 true DE69102836D1 (de) 1994-08-18
DE69102836T2 DE69102836T2 (de) 1995-02-16

Family

ID=16500962

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69102836T Expired - Fee Related DE69102836T2 (de) 1990-08-03 1991-08-01 Halbleitersensor.

Country Status (4)

Country Link
US (1) US5138414A (de)
EP (1) EP0470003B1 (de)
JP (1) JP2560140B2 (de)
DE (1) DE69102836T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0567075B1 (de) * 1992-04-22 2001-10-24 Denso Corporation Verfahren zur Herstellung einer Halbleiteranordnung
JPH0694744A (ja) * 1992-09-09 1994-04-08 Mitsubishi Electric Corp 半導体加速度検出装置
JP3303430B2 (ja) * 1993-05-21 2002-07-22 株式会社デンソー Ｆｅｔ型加速度センサ
US5511427A (en) * 1993-07-21 1996-04-30 Honeywell Inc. Cantilevered microbeam temperature sensor
US5508231A (en) * 1994-03-07 1996-04-16 National Semiconductor Corporation Apparatus and method for achieving mechanical and thermal isolation of portions of integrated monolithic circuits
WO1995028007A1 (fr) * 1994-04-11 1995-10-19 Zakrytoe Aktsionernoe Obschestvo 'innovatsionny Tsentr Novykh Tekhnologii' Convertisseur extensometrique a semiconducteur
US5511428A (en) * 1994-06-10 1996-04-30 Massachusetts Institute Of Technology Backside contact of sensor microstructures
US5925825A (en) * 1994-10-05 1999-07-20 Franklin Electric Co., Inc. Clamp and cup securing strain gauge cell adjacent pressure transmitting diaphragm
US5863185A (en) * 1994-10-05 1999-01-26 Franklin Electric Co. Liquid pumping system with cooled control module
KR0139506B1 (ko) * 1994-10-07 1998-07-15 전성원 자체진단 기능을 구비한 대칭질량형 가속도계 및 그 제조방법
US5698785A (en) * 1995-04-04 1997-12-16 Delco Electronics Corporation Self-compensating accelerometer
US6561428B2 (en) 1997-10-17 2003-05-13 Hand Held Products, Inc. Imaging device having indicia-controlled image parsing mode
JP2000088878A (ja) * 1998-09-09 2000-03-31 Tokai Rika Co Ltd 加速度スイッチ及びその製造方法
US6548840B1 (en) * 2000-04-03 2003-04-15 Hrl Laboratories, Llc Monolithic temperature compensation scheme for field effect transistor integrated circuits
US7253074B2 (en) * 2004-11-05 2007-08-07 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Temperature-compensated resistor and fabrication method therefor
JP5174343B2 (ja) * 2006-12-12 2013-04-03 本田技研工業株式会社 力覚センサ用チップ
JP5195102B2 (ja) * 2008-07-11 2013-05-08 大日本印刷株式会社 センサおよびその製造方法
TWI420537B (zh) * 2009-12-29 2013-12-21 Univ Nat Taiwan 熱效應自補償系統及用於熱效應補償的裝置與方法
KR20110133352A (ko) * 2010-06-04 2011-12-12 삼성테크윈 주식회사 미세 구조물, 이를 구비하는 미세 전자 기계 시스템, 및 그 제조 방법
EP2667202B1 (de) * 2011-01-20 2019-05-08 Panasonic Intellectual Property Management Co., Ltd. Beschleunigungsmesser
CN102163606B (zh) * 2011-01-26 2012-12-26 北京大学 一种电荷检测芯片及其制备方法
JP5561187B2 (ja) * 2011-01-26 2014-07-30 株式会社デンソー 角速度センサ装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100474A (ja) * 1983-11-04 1985-06-04 Shindengen Electric Mfg Co Ltd 半導体圧力センサ
JPS62213280A (ja) * 1986-03-14 1987-09-19 Nissan Motor Co Ltd 半導体加速度センサ
JPS6341080A (ja) * 1986-08-06 1988-02-22 Nissan Motor Co Ltd 半導体加速度センサ
JPH0682844B2 (ja) * 1986-08-06 1994-10-19 日産自動車株式会社 半導体歪変換装置
JPS6381274A (ja) * 1986-09-24 1988-04-12 Aisin Seiki Co Ltd 加速度センサ
GB8718004D0 (en) * 1987-07-29 1987-12-16 Marconi Co Ltd Accelerometer
JPH07113647B2 (ja) * 1988-09-02 1995-12-06 日産自動車株式会社 半導体加速度センサ
JPH02218171A (ja) * 1989-02-17 1990-08-30 Mitsubishi Electric Corp 半導体圧力センサ
US4969359A (en) * 1989-04-06 1990-11-13 Ford Motor Company Silicon accelerometer responsive to three orthogonal force components and method for fabricating
US4987781A (en) * 1989-05-03 1991-01-29 Sensym, Incorporated Accelerometer chip

Also Published As

Publication number Publication date
EP0470003A1 (de) 1992-02-05
JP2560140B2 (ja) 1996-12-04
US5138414A (en) 1992-08-11
EP0470003B1 (de) 1994-07-13
JPH0493631A (ja) 1992-03-26
DE69102836T2 (de) 1995-02-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee