DE69109312D1 - Halbleitersensor. - Google Patents

Halbleitersensor.

Info

Publication number
DE69109312D1
DE69109312D1 DE69109312T DE69109312T DE69109312D1 DE 69109312 D1 DE69109312 D1 DE 69109312D1 DE 69109312 T DE69109312 T DE 69109312T DE 69109312 T DE69109312 T DE 69109312T DE 69109312 D1 DE69109312 D1 DE 69109312D1
Authority
DE
Germany
Prior art keywords
semiconductor sensor
semiconductor
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69109312T
Other languages
English (en)
Other versions
DE69109312T2 (de
Inventor
Katsuhiko Takebe
Satoshi Hiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honda Motor Co Ltd
Original Assignee
Honda Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honda Motor Co Ltd filed Critical Honda Motor Co Ltd
Publication of DE69109312D1 publication Critical patent/DE69109312D1/de
Application granted granted Critical
Publication of DE69109312T2 publication Critical patent/DE69109312T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0098Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means using semiconductor body comprising at least one PN junction as detecting element
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/005Measuring force or stress, in general by electrical means and not provided for in G01L1/06 - G01L1/22
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/124Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by semiconductor devices comprising at least one PN junction, e.g. transistors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Measuring Fluid Pressure (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)
  • Pressure Sensors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)
DE69109312T 1990-02-06 1991-02-05 Halbleitersensor. Expired - Fee Related DE69109312T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2026420A JP2532149B2 (ja) 1990-02-06 1990-02-06 半導体センサ

Publications (2)

Publication Number Publication Date
DE69109312D1 true DE69109312D1 (de) 1995-06-08
DE69109312T2 DE69109312T2 (de) 1995-08-31

Family

ID=12193041

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69109312T Expired - Fee Related DE69109312T2 (de) 1990-02-06 1991-02-05 Halbleitersensor.

Country Status (4)

Country Link
US (1) US5187986A (de)
EP (1) EP0441324B1 (de)
JP (1) JP2532149B2 (de)
DE (1) DE69109312T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5379639A (en) * 1992-12-10 1995-01-10 Alliedsignal Inc. Combined force transducer and temperature sensor
US5578843A (en) * 1994-10-06 1996-11-26 Kavlico Corporation Semiconductor sensor with a fusion bonded flexible structure
DE4437306C2 (de) * 1994-10-19 1997-03-06 Forschungszentrum Juelich Gmbh Dehnungsmesser zur Messung der Dehnung eines als Halbleiterdehnungsmeßstreifen eingesetzten einkristallinen Halbleitermaterials
JP2852886B2 (ja) * 1995-09-04 1999-02-03 本田技研工業株式会社 半導体応力センサ
US6049115A (en) * 1996-04-18 2000-04-11 Seiko Instruments Inc. Scanning probe microscope, and semiconductor distortion sensor for use therein
US5966617A (en) * 1996-09-20 1999-10-12 Kavlico Corporation Multiple local oxidation for surface micromachining
DE19810826B4 (de) * 1998-03-12 2012-06-21 Infineon Technologies Ag Meßvorrichtung zum digitalen Erfassen analoger Meßgrößen
ATE291220T1 (de) 2001-05-29 2005-04-15 Em Microelectronic Marin Sa Elektronische vorrichtung und verfahren zur temperaturüberwachung eines mediums
FR2848676B1 (fr) * 2002-12-16 2005-12-16 Commissariat Energie Atomique Dispositifs pour corriger le signal issu d'un detecteur
US8459128B2 (en) 2008-04-15 2013-06-11 Indian Institute Of Science Sub-threshold elastic deflection FET sensor for sensing pressure/force, a method and system thereof
JP5649478B2 (ja) * 2011-02-16 2015-01-07 三菱電機株式会社 半導体装置及びその試験方法
CN102856495B (zh) * 2011-06-30 2014-12-31 清华大学 压力调控薄膜晶体管及其应用
DE102021206134A1 (de) * 2021-06-16 2022-12-22 Robert Bosch Gesellschaft mit beschränkter Haftung Stress- und/oder Dehnungsmesszelle für ein Stress- und/oder Dehnungsmesssystem

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3245252A (en) * 1961-11-15 1966-04-12 Kulite Bytrex Corp Temperature compensated semiconductor strain gage unit
US3582690A (en) * 1969-06-09 1971-06-01 Gen Electric Semiconductor strain sensor with controlled sensitivity
JPS5015669B1 (de) * 1970-09-30 1975-06-06
BE787685A (fr) * 1971-08-20 1973-02-19 Uss Eng & Consult Correcteur de derive pour transducteurs
FR2224752B1 (de) * 1973-04-09 1977-09-02 Thomson Medical Telco
JPS5995420A (ja) * 1982-11-24 1984-06-01 Hitachi Ltd Mos型センサ
DE3515349A1 (de) * 1985-04-27 1986-10-30 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Elektrischer geber zur messung mechanischer groessen
JPS62213280A (ja) * 1986-03-14 1987-09-19 Nissan Motor Co Ltd 半導体加速度センサ
JPS6318272A (ja) * 1986-07-10 1988-01-26 Nippon Steel Corp 圧電形加速度検出器
DE68926601T2 (de) * 1988-09-02 1997-01-23 Honda Motor Co Ltd Halbleitermessaufnehmer

Also Published As

Publication number Publication date
EP0441324A1 (de) 1991-08-14
EP0441324B1 (de) 1995-05-03
JPH03231158A (ja) 1991-10-15
JP2532149B2 (ja) 1996-09-11
DE69109312T2 (de) 1995-08-31
US5187986A (en) 1993-02-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee