DE69109312D1 - Halbleitersensor. - Google Patents
Halbleitersensor.Info
- Publication number
- DE69109312D1 DE69109312D1 DE69109312T DE69109312T DE69109312D1 DE 69109312 D1 DE69109312 D1 DE 69109312D1 DE 69109312 T DE69109312 T DE 69109312T DE 69109312 T DE69109312 T DE 69109312T DE 69109312 D1 DE69109312 D1 DE 69109312D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor sensor
- semiconductor
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0098—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means using semiconductor body comprising at least one PN junction as detecting element
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/005—Measuring force or stress, in general by electrical means and not provided for in G01L1/06 - G01L1/22
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/124—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by semiconductor devices comprising at least one PN junction, e.g. transistors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Measuring Fluid Pressure (AREA)
- Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)
- Pressure Sensors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2026420A JP2532149B2 (ja) | 1990-02-06 | 1990-02-06 | 半導体センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69109312D1 true DE69109312D1 (de) | 1995-06-08 |
DE69109312T2 DE69109312T2 (de) | 1995-08-31 |
Family
ID=12193041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69109312T Expired - Fee Related DE69109312T2 (de) | 1990-02-06 | 1991-02-05 | Halbleitersensor. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5187986A (de) |
EP (1) | EP0441324B1 (de) |
JP (1) | JP2532149B2 (de) |
DE (1) | DE69109312T2 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5379639A (en) * | 1992-12-10 | 1995-01-10 | Alliedsignal Inc. | Combined force transducer and temperature sensor |
US5578843A (en) * | 1994-10-06 | 1996-11-26 | Kavlico Corporation | Semiconductor sensor with a fusion bonded flexible structure |
DE4437306C2 (de) * | 1994-10-19 | 1997-03-06 | Forschungszentrum Juelich Gmbh | Dehnungsmesser zur Messung der Dehnung eines als Halbleiterdehnungsmeßstreifen eingesetzten einkristallinen Halbleitermaterials |
JP2852886B2 (ja) * | 1995-09-04 | 1999-02-03 | 本田技研工業株式会社 | 半導体応力センサ |
EP0802394B1 (de) * | 1996-04-18 | 2003-06-11 | Seiko Instruments Inc. | Halbleiterdehnungssensoren mit pn Übergang, Rastersondenmikroskop |
US5966617A (en) * | 1996-09-20 | 1999-10-12 | Kavlico Corporation | Multiple local oxidation for surface micromachining |
DE19810826B4 (de) * | 1998-03-12 | 2012-06-21 | Infineon Technologies Ag | Meßvorrichtung zum digitalen Erfassen analoger Meßgrößen |
ATE291220T1 (de) | 2001-05-29 | 2005-04-15 | Em Microelectronic Marin Sa | Elektronische vorrichtung und verfahren zur temperaturüberwachung eines mediums |
FR2848676B1 (fr) * | 2002-12-16 | 2005-12-16 | Commissariat Energie Atomique | Dispositifs pour corriger le signal issu d'un detecteur |
WO2009128084A1 (en) * | 2008-04-15 | 2009-10-22 | Indian Institute Of Science | A sub-threshold elastic deflection fet sensor for sensing pressure/force, a method and system thereof |
JP5649478B2 (ja) * | 2011-02-16 | 2015-01-07 | 三菱電機株式会社 | 半導体装置及びその試験方法 |
CN102856495B (zh) * | 2011-06-30 | 2014-12-31 | 清华大学 | 压力调控薄膜晶体管及其应用 |
DE102021206134A1 (de) * | 2021-06-16 | 2022-12-22 | Robert Bosch Gesellschaft mit beschränkter Haftung | Stress- und/oder Dehnungsmesszelle für ein Stress- und/oder Dehnungsmesssystem |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3245252A (en) * | 1961-11-15 | 1966-04-12 | Kulite Bytrex Corp | Temperature compensated semiconductor strain gage unit |
US3582690A (en) * | 1969-06-09 | 1971-06-01 | Gen Electric | Semiconductor strain sensor with controlled sensitivity |
JPS5015669B1 (de) * | 1970-09-30 | 1975-06-06 | ||
BE787685A (fr) * | 1971-08-20 | 1973-02-19 | Uss Eng & Consult | Correcteur de derive pour transducteurs |
FR2224752B1 (de) * | 1973-04-09 | 1977-09-02 | Thomson Medical Telco | |
JPS5995420A (ja) * | 1982-11-24 | 1984-06-01 | Hitachi Ltd | Mos型センサ |
DE3515349A1 (de) * | 1985-04-27 | 1986-10-30 | Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn | Elektrischer geber zur messung mechanischer groessen |
JPS62213280A (ja) * | 1986-03-14 | 1987-09-19 | Nissan Motor Co Ltd | 半導体加速度センサ |
JPS6318272A (ja) * | 1986-07-10 | 1988-01-26 | Nippon Steel Corp | 圧電形加速度検出器 |
EP0363005B1 (de) * | 1988-09-02 | 1996-06-05 | Honda Giken Kogyo Kabushiki Kaisha | Halbleitermessaufnehmer |
-
1990
- 1990-02-06 JP JP2026420A patent/JP2532149B2/ja not_active Expired - Lifetime
-
1991
- 1991-02-05 DE DE69109312T patent/DE69109312T2/de not_active Expired - Fee Related
- 1991-02-05 EP EP91101529A patent/EP0441324B1/de not_active Expired - Lifetime
- 1991-02-06 US US07/651,131 patent/US5187986A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0441324B1 (de) | 1995-05-03 |
JP2532149B2 (ja) | 1996-09-11 |
EP0441324A1 (de) | 1991-08-14 |
JPH03231158A (ja) | 1991-10-15 |
DE69109312T2 (de) | 1995-08-31 |
US5187986A (en) | 1993-02-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |