DE69001548T2 - Lichtemittierende halbleitervorrichtung. - Google Patents

Lichtemittierende halbleitervorrichtung.

Info

Publication number
DE69001548T2
DE69001548T2 DE9090124199T DE69001548T DE69001548T2 DE 69001548 T2 DE69001548 T2 DE 69001548T2 DE 9090124199 T DE9090124199 T DE 9090124199T DE 69001548 T DE69001548 T DE 69001548T DE 69001548 T2 DE69001548 T2 DE 69001548T2
Authority
DE
Germany
Prior art keywords
light
semiconductor device
emitting semiconductor
emitting
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE9090124199T
Other languages
English (en)
Other versions
DE69001548D1 (de
Inventor
Kazuyoshi Hasegawa
Mitsuo Ishii
Masayuki Kubota
Seiichi Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69001548D1 publication Critical patent/DE69001548D1/de
Publication of DE69001548T2 publication Critical patent/DE69001548T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4212—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element being a coupling medium interposed therebetween, e.g. epoxy resin, refractive index matching material, index grease, matching liquid or gel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
DE9090124199T 1990-07-16 1990-12-14 Lichtemittierende halbleitervorrichtung. Expired - Lifetime DE69001548T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2189917A JP2792722B2 (ja) 1990-07-16 1990-07-16 半導体発光装置

Publications (2)

Publication Number Publication Date
DE69001548D1 DE69001548D1 (de) 1993-06-09
DE69001548T2 true DE69001548T2 (de) 1993-09-09

Family

ID=16249375

Family Applications (1)

Application Number Title Priority Date Filing Date
DE9090124199T Expired - Lifetime DE69001548T2 (de) 1990-07-16 1990-12-14 Lichtemittierende halbleitervorrichtung.

Country Status (5)

Country Link
US (1) US5105237A (de)
EP (1) EP0466975B1 (de)
JP (1) JP2792722B2 (de)
KR (1) KR950000112B1 (de)
DE (1) DE69001548T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5590144A (en) * 1990-11-07 1996-12-31 Fuji Electric Co., Ltd. Semiconductor laser device
US5444726A (en) * 1990-11-07 1995-08-22 Fuji Electric Co., Ltd. Semiconductor laser device
TW253996B (de) * 1992-04-07 1995-08-11 Fuji Electric Co Ltd
US5367530A (en) * 1992-05-29 1994-11-22 Sanyo Electric Co., Ltd. Semiconductor laser apparatus
JP2565279B2 (ja) * 1992-09-25 1996-12-18 日本電気株式会社 光結合構造
US5414293A (en) * 1992-10-14 1995-05-09 International Business Machines Corporation Encapsulated light emitting diodes
EP0592746B1 (de) * 1992-10-14 1997-03-19 International Business Machines Corporation Gekapselte, lichtemittierende Diode und Kapselungsverfahren
US5516727A (en) * 1993-04-19 1996-05-14 International Business Machines Corporation Method for encapsulating light emitting diodes
JPH09307144A (ja) * 1996-05-14 1997-11-28 Matsushita Electric Ind Co Ltd 発光素子及びその製造方法
DE19714170C1 (de) * 1997-03-21 1998-07-30 Siemens Ag Elektrooptisches Modul
JP2001021775A (ja) * 1999-07-09 2001-01-26 Sumitomo Electric Ind Ltd 光学装置
US20030151832A1 (en) * 2002-01-14 2003-08-14 Arthur Berman Method and apparatus for enclosing optical assemblies
US6999237B2 (en) * 2001-09-12 2006-02-14 Lightmaster Systems, Inc. Method and apparatus for configuration and assembly of a video projection light management system
US7359646B2 (en) 2001-09-14 2008-04-15 Finisar Corporation Transmitter and/or receiver arrangement of optical signal transmission
EP1980886A3 (de) 2002-04-01 2008-11-12 Ibiden Co., Ltd. Optische Kommunikationsvorrichtung und Verfahren zur Herstellung der optischen Kommunikationsvorrichtung
EP1688770B1 (de) * 2003-11-27 2012-11-14 Ibiden Co., Ltd. Ic-chip-anbring-board, substrat für ein motherboard, einrichtung zur optischen kommunikation, verfahren zur herstellung eines substrats zur anbringung eines ic-chips darauf und verfahren zur herstellung eines substrats für ein motherboard
JP2008032522A (ja) * 2006-07-28 2008-02-14 Nitta Ind Corp 光ファイバを用いた触覚センサ
WO2016164035A1 (en) 2015-04-10 2016-10-13 Hewlett Packard Enterprise Development Lp Overmolded filters

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE226431C (de) *
JPS5333436A (en) * 1976-09-09 1978-03-29 Toshiba Corp Alloy for high frequency induction heating vessel
US4478588A (en) * 1978-03-06 1984-10-23 Amp Incorporated Light emitting diode assembly
JPS54127691A (en) * 1978-03-28 1979-10-03 Toshiba Corp Semiconductor light emission device
JPS5545236U (de) * 1978-09-16 1980-03-25
DE2913262C2 (de) * 1979-04-03 1982-04-29 Kabelwerke Reinshagen Gmbh, 5600 Wuppertal Elektro-optische Verbindungsvorrichtung
JPS566038U (de) * 1979-06-25 1981-01-20
DE3016103A1 (de) * 1980-04-25 1981-10-29 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung transparenter geissharze
JPS5850572A (ja) * 1981-09-22 1983-03-25 株式会社東芝 デイスプレイ装置の製造方法
EP0114258A1 (de) * 1982-11-30 1984-08-01 Kabushiki Kaisha Toshiba Kunstharzgekapselte lichtelektrische Halbleiteranordnungen
JPH084155B2 (ja) * 1986-06-25 1996-01-17 松下電器産業株式会社 光コネクタモジユ−ル
JPS6314489A (ja) * 1986-07-04 1988-01-21 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS6333877A (ja) * 1986-07-29 1988-02-13 Omron Tateisi Electronics Co 光半導体装置
JP2504533B2 (ja) * 1988-09-02 1996-06-05 同和鉱業株式会社 Ｌｅｄ発光装置並びに該装置に用いる発光ブロックの製造方法

Also Published As

Publication number Publication date
US5105237A (en) 1992-04-14
KR920003566A (ko) 1992-02-29
KR950000112B1 (ko) 1995-01-09
EP0466975B1 (de) 1993-05-05
JP2792722B2 (ja) 1998-09-03
JPH0474483A (ja) 1992-03-09
EP0466975A1 (de) 1992-01-22
DE69001548D1 (de) 1993-06-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)