DE69009626D1 - Masterslice-Halbleitervorrichtung. - Google Patents

Masterslice-Halbleitervorrichtung.

Info

Publication number
DE69009626D1
DE69009626D1 DE69009626T DE69009626T DE69009626D1 DE 69009626 D1 DE69009626 D1 DE 69009626D1 DE 69009626 T DE69009626 T DE 69009626T DE 69009626 T DE69009626 T DE 69009626T DE 69009626 D1 DE69009626 D1 DE 69009626D1
Authority
DE
Germany
Prior art keywords
semiconductor device
masterslice semiconductor
masterslice
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69009626T
Other languages
English (en)
Other versions
DE69009626T2 (de
Inventor
Takaji Otsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69009626D1 publication Critical patent/DE69009626D1/de
Publication of DE69009626T2 publication Critical patent/DE69009626T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
    • H01L2027/11809—Microarchitecture
    • H01L2027/11835—Degree of specialisation for implementing specific functions
    • H01L2027/11837—Implementation of digital circuits
    • H01L2027/11838—Implementation of memory functions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69009626T 1989-08-25 1990-08-22 Masterslice-Halbleitervorrichtung. Expired - Fee Related DE69009626T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1219970A JPH0383375A (ja) 1989-08-25 1989-08-25 半導体装置

Publications (2)

Publication Number Publication Date
DE69009626D1 true DE69009626D1 (de) 1994-07-14
DE69009626T2 DE69009626T2 (de) 1994-11-10

Family

ID=16743882

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69009626T Expired - Fee Related DE69009626T2 (de) 1989-08-25 1990-08-22 Masterslice-Halbleitervorrichtung.

Country Status (4)

Country Link
US (1) US5083178A (de)
EP (1) EP0414520B1 (de)
JP (1) JPH0383375A (de)
DE (1) DE69009626T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5285069A (en) * 1990-11-21 1994-02-08 Ricoh Company, Ltd. Array of field effect transistors of different threshold voltages in same semiconductor integrated circuit
US6160275A (en) * 1993-04-20 2000-12-12 Hitachi, Ltd. Semiconductor gate array device
JP3520659B2 (ja) * 1995-03-30 2004-04-19 セイコーエプソン株式会社 複数の電源電圧で駆動されるゲートアレイ及びそれを用いた電子機器
JPH0997885A (ja) * 1995-09-28 1997-04-08 Denso Corp ゲートアレイ
EP0782187B1 (de) * 1995-12-29 2000-06-28 STMicroelectronics S.r.l. Standardzellenbibliothek für den Entwurf von integrierten Schaltungen
JP2872124B2 (ja) * 1996-07-15 1999-03-17 日本電気株式会社 Ｃｍｏｓ型スタティックメモリ
JPH1084092A (ja) * 1996-09-09 1998-03-31 Toshiba Corp 半導体集積回路
US6445049B1 (en) * 1997-06-30 2002-09-03 Artisan Components, Inc. Cell based array comprising logic, transfer and drive cells
JPH1154632A (ja) * 1997-08-01 1999-02-26 Mitsubishi Electric Corp メモリセルのレイアウトパターン
US5982199A (en) * 1998-01-13 1999-11-09 Advanced Micro Devices, Inc. Faster NAND for microprocessors utilizing unevenly sub-nominal P-channel and N-channel CMOS transistors with reduced overlap capacitance
US6087225A (en) * 1998-02-05 2000-07-11 International Business Machines Corporation Method for dual gate oxide dual workfunction CMOS
JP2001352047A (ja) * 2000-06-05 2001-12-21 Oki Micro Design Co Ltd 半導体集積回路
JP2003203993A (ja) 2002-01-10 2003-07-18 Mitsubishi Electric Corp 半導体記憶装置及びその製造方法
US7095063B2 (en) * 2003-05-07 2006-08-22 International Business Machines Corporation Multiple supply gate array backfill structure
JP4912621B2 (ja) * 2005-06-07 2012-04-11 富士通株式会社 半導体装置及び半導体装置の配線方法
JP7211010B2 (ja) * 2018-10-31 2023-01-24 セイコーエプソン株式会社 半導体集積回路、電子機器及び移動体

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59150446A (ja) * 1983-01-29 1984-08-28 Toshiba Corp 半導体集積回路装置
KR890004568B1 (ko) * 1983-07-09 1989-11-15 후지쑤가부시끼가이샤 마스터슬라이스형 반도체장치
JPS6065547A (ja) * 1983-09-20 1985-04-15 Sharp Corp 半導体装置
JPS60177651A (ja) * 1984-02-23 1985-09-11 Toshiba Corp 半導体装置およびその製造方法
US4688072A (en) * 1984-06-29 1987-08-18 Hughes Aircraft Company Hierarchical configurable gate array
JPH0695570B2 (ja) * 1985-02-07 1994-11-24 三菱電機株式会社 半導体集積回路装置
JPS61268040A (ja) * 1985-05-23 1986-11-27 Nec Corp 半導体装置
JPH01274512A (ja) * 1988-04-27 1989-11-02 Hitachi Ltd 半導体論理装置

Also Published As

Publication number Publication date
JPH0383375A (ja) 1991-04-09
DE69009626T2 (de) 1994-11-10
EP0414520A1 (de) 1991-02-27
US5083178A (en) 1992-01-21
EP0414520B1 (de) 1994-06-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee