DE68918134D1 - Elektronenemittierende Halbleitervorrichtung. - Google Patents
Elektronenemittierende Halbleitervorrichtung.Info
- Publication number
- DE68918134D1 DE68918134D1 DE68918134T DE68918134T DE68918134D1 DE 68918134 D1 DE68918134 D1 DE 68918134D1 DE 68918134 T DE68918134 T DE 68918134T DE 68918134 T DE68918134 T DE 68918134T DE 68918134 D1 DE68918134 D1 DE 68918134D1
- Authority
- DE
- Germany
- Prior art keywords
- emitting device
- electron emitting
- semiconductor electron
- semiconductor
- emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4547188A JP2788243B2 (ja) | 1988-02-27 | 1988-02-27 | 半導体電子放出素子及び半導体電子放出装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68918134D1 true DE68918134D1 (de) | 1994-10-20 |
DE68918134T2 DE68918134T2 (de) | 1995-01-26 |
Family
ID=12720303
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68918134T Expired - Fee Related DE68918134T2 (de) | 1988-02-27 | 1989-02-24 | Elektronenemittierende Halbleitervorrichtung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5138402A (de) |
EP (1) | EP0331373B1 (de) |
JP (1) | JP2788243B2 (de) |
DE (1) | DE68918134T2 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69027960T2 (de) * | 1989-09-04 | 1997-01-09 | Canon Kk | Elektronen emittierendes Element und Verfahren zur Herstellung desselben |
JPH03129633A (ja) * | 1989-10-13 | 1991-06-03 | Canon Inc | 電子放出素子 |
JPH03129632A (ja) * | 1989-10-13 | 1991-06-03 | Canon Inc | 電子放出素子 |
JP2765998B2 (ja) * | 1989-10-13 | 1998-06-18 | キヤノン株式会社 | 電子放出素子の製造方法 |
JP2765982B2 (ja) * | 1989-09-07 | 1998-06-18 | キヤノン株式会社 | 半導体電子放出素子およびその製造方法 |
US5814832A (en) * | 1989-09-07 | 1998-09-29 | Canon Kabushiki Kaisha | Electron emitting semiconductor device |
DE69009357T2 (de) * | 1989-09-07 | 1994-10-06 | Canon Kk | Elektronenemittierende Halbleitervorrichtung. |
JP2820450B2 (ja) * | 1989-09-07 | 1998-11-05 | キヤノン株式会社 | 半導体電子放出素子 |
JP2780819B2 (ja) * | 1989-09-07 | 1998-07-30 | キヤノン株式会社 | 半導体電子放出素子 |
JPH0395825A (ja) * | 1989-09-07 | 1991-04-22 | Canon Inc | 半導体電子放出素子 |
JPH0512988A (ja) * | 1990-10-13 | 1993-01-22 | Canon Inc | 半導体電子放出素子 |
EP0504603B1 (de) * | 1991-02-20 | 1997-07-16 | Canon Kabushiki Kaisha | Halbleiter-Elektronenemissionseinrichtung |
EP0532019B1 (de) * | 1991-09-13 | 1997-12-29 | Canon Kabushiki Kaisha | Halbleiter-Elektronenemittierende Einrichtung |
US5463275A (en) * | 1992-07-10 | 1995-10-31 | Trw Inc. | Heterojunction step doped barrier cathode emitter |
KR100499136B1 (ko) | 2002-12-14 | 2005-07-04 | 삼성전자주식회사 | 전자 스핀의존 산란을 이용한 자성매체 및 자성매체정보재생장치 및 재생방법 |
US7538361B2 (en) * | 2003-03-24 | 2009-05-26 | Showa Denko K.K. | Ohmic electrode structure, compound semiconductor light emitting device having the same, and LED lamp |
US7884324B2 (en) * | 2007-06-03 | 2011-02-08 | Wisconsin Alumni Research Foundation | Nanopillar arrays for electron emission |
DE102011053684B4 (de) | 2010-09-17 | 2019-03-28 | Wisconsin Alumni Research Foundation | Verfahren zur Durchführung von strahlformstossaktivierter Dissoziation im bereits bestehenden Ioneninjektionspfad eines Massenspektrometers |
US8507845B2 (en) * | 2011-06-02 | 2013-08-13 | Wisconsin Alumni Research Foundation | Membrane detector for time-of-flight mass spectrometry |
EP3335610B1 (de) | 2016-12-14 | 2024-03-06 | Advanced Digital Broadcast S.A. | Oberflächenbearbeitungsvorrichtung und verfahren zur verarbeitung von oberflächenbereichen |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5021829A (de) * | 1973-06-30 | 1975-03-08 | ||
NL184549C (nl) * | 1978-01-27 | 1989-08-16 | Philips Nv | Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting. |
NL184589C (nl) * | 1979-07-13 | 1989-09-01 | Philips Nv | Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting. |
NL8400297A (nl) * | 1984-02-01 | 1985-09-02 | Philips Nv | Halfgeleiderinrichting voor het opwekken van een elektronenbundel. |
JP2578801B2 (ja) * | 1986-05-20 | 1997-02-05 | キヤノン株式会社 | 電子放出素子 |
JPH07111865B2 (ja) * | 1986-08-12 | 1995-11-29 | キヤノン株式会社 | 固体電子ビ−ム発生装置 |
-
1988
- 1988-02-27 JP JP4547188A patent/JP2788243B2/ja not_active Expired - Lifetime
-
1989
- 1989-02-24 EP EP89301863A patent/EP0331373B1/de not_active Expired - Lifetime
- 1989-02-24 DE DE68918134T patent/DE68918134T2/de not_active Expired - Fee Related
-
1991
- 1991-12-13 US US07/807,613 patent/US5138402A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH01220328A (ja) | 1989-09-04 |
EP0331373A2 (de) | 1989-09-06 |
US5138402A (en) | 1992-08-11 |
DE68918134T2 (de) | 1995-01-26 |
EP0331373A3 (en) | 1990-08-22 |
EP0331373B1 (de) | 1994-09-14 |
JP2788243B2 (ja) | 1998-08-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE58906492D1 (de) | Halbleiterschaltung. | |
DE3850855D1 (de) | Halbleitervorrichtung. | |
DE3853744T2 (de) | Elektronenemittierende Vorrichtung. | |
DE68917848D1 (de) | Halbleiteranordnung. | |
DE68920767D1 (de) | Halbleiterpackung. | |
DE3880592D1 (de) | Feldemissions-vorrichtung. | |
DE68915673D1 (de) | Halbleiterlaser-Vorrichtung. | |
DE68918134D1 (de) | Elektronenemittierende Halbleitervorrichtung. | |
DE68918884D1 (de) | Halbleiterlaser-Vorrichtung. | |
DE68921421D1 (de) | Halbleitervorrichtung. | |
DE68921391D1 (de) | Quantuminterferenzhalbleitereinrichtung. | |
DE69013032D1 (de) | Lichtaussendendes Halbleitersystem. | |
DE68912512D1 (de) | Halbleiterlaser-Vorrichtung. | |
DE69223707T2 (de) | Halbleiter-Elektronenemittierende Einrichtung | |
DE3582804D1 (de) | Lichtemittierende halbleiterschaltung. | |
DE69001548D1 (de) | Lichtemittierende halbleitervorrichtung. | |
DE68910492D1 (de) | Halbleiterlaservorrichtung. | |
DE69009626D1 (de) | Masterslice-Halbleitervorrichtung. | |
DE69021904T2 (de) | Zusammengesetzte Halbleitervorrichtung. | |
DE68922117D1 (de) | Halbleiterphotodiode. | |
DE3581333D1 (de) | Lichtemittierende halbleitervorrichtung. | |
DE3887790D1 (de) | Lichtemittierende Halbleitervorrichtung. | |
DE59003052D1 (de) | Halbleiterbauelement. | |
DE3851080D1 (de) | Elektronenemittierende Vorrichtung. | |
DE3784560D1 (de) | Elektronen emittierende vorrichtung. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |