DE69510129T2 - Oberflächenemittierende lumineszente Halbleitervorrichtung - Google Patents

Oberflächenemittierende lumineszente Halbleitervorrichtung

Info

Publication number
DE69510129T2
DE69510129T2 DE69510129T DE69510129T DE69510129T2 DE 69510129 T2 DE69510129 T2 DE 69510129T2 DE 69510129 T DE69510129 T DE 69510129T DE 69510129 T DE69510129 T DE 69510129T DE 69510129 T2 DE69510129 T2 DE 69510129T2
Authority
DE
Germany
Prior art keywords
semiconductor device
surface emitting
luminescent semiconductor
emitting luminescent
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69510129T
Other languages
English (en)
Other versions
DE69510129D1 (de
Inventor
Akira Ishibashi
Norikazu Nakayama
Satoru Kijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69510129D1 publication Critical patent/DE69510129D1/de
Application granted granted Critical
Publication of DE69510129T2 publication Critical patent/DE69510129T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
DE69510129T 1994-07-11 1995-07-07 Oberflächenemittierende lumineszente Halbleitervorrichtung Expired - Fee Related DE69510129T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18177994A JP3586293B2 (ja) 1994-07-11 1994-07-11 半導体発光素子

Publications (2)

Publication Number Publication Date
DE69510129D1 DE69510129D1 (de) 1999-07-15
DE69510129T2 true DE69510129T2 (de) 1999-12-09

Family

ID=16106744

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69510129T Expired - Fee Related DE69510129T2 (de) 1994-07-11 1995-07-07 Oberflächenemittierende lumineszente Halbleitervorrichtung

Country Status (5)

Country Link
US (2) US5617446A (de)
EP (1) EP0692827B1 (de)
JP (1) JP3586293B2 (de)
KR (1) KR960006102A (de)
DE (1) DE69510129T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5665977A (en) * 1994-02-16 1997-09-09 Sony Corporation Semiconductor light emitting device with defect decomposing and blocking layers
JP2809124B2 (ja) * 1995-02-09 1998-10-08 日本電気株式会社 光半導体集積素子およびその製造方法
US5889295A (en) * 1996-02-26 1999-03-30 Kabushiki Kaisha Toshiba Semiconductor device
US5956362A (en) * 1996-02-27 1999-09-21 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device and method of etching
US5732103A (en) * 1996-12-09 1998-03-24 Motorola, Inc. Long wavelength VCSEL
JPH10256602A (ja) * 1997-03-12 1998-09-25 Sharp Corp 半導体発光素子
JPH11135883A (ja) * 1997-10-28 1999-05-21 Sony Corp 半導体発光素子およびその製造方法
US6372356B1 (en) * 1998-06-04 2002-04-16 Xerox Corporation Compliant substrates for growing lattice mismatched films
US6291839B1 (en) * 1998-09-11 2001-09-18 Lulileds Lighting, U.S. Llc Light emitting device having a finely-patterned reflective contact
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
KR100580241B1 (ko) * 1999-01-23 2006-05-16 삼성전자주식회사 표면광 레이저 어레이 및 그 제조방법
US6876003B1 (en) * 1999-04-15 2005-04-05 Sumitomo Electric Industries, Ltd. Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device
JP3533995B2 (ja) * 1999-07-01 2004-06-07 住友電気工業株式会社 発光ダイオードおよびその製造方法
US6501092B1 (en) * 1999-10-25 2002-12-31 Intel Corporation Integrated semiconductor superlattice optical modulator
DE10024924A1 (de) * 2000-05-19 2001-11-29 Osram Opto Semiconductors Gmbh Licht emittierendes Halbleiterbauelement
US6647041B1 (en) * 2000-05-26 2003-11-11 Finisar Corporation Electrically pumped vertical optical cavity with improved electrical performance
JP2004055646A (ja) 2002-07-17 2004-02-19 Sumitomo Electric Ind Ltd 発光ダイオード素子のｐ側電極構造
US6958498B2 (en) * 2002-09-27 2005-10-25 Emcore Corporation Optimized contact design for flip-chip LED
KR100452751B1 (ko) * 2003-06-03 2004-10-15 삼성전기주식회사 그물망 전극이 적용된 ⅲ-질화물 반도체 발광소자
US7136408B2 (en) * 2004-06-14 2006-11-14 Coherent, Inc. InGaN diode-laser pumped II-VI semiconductor lasers
WO2006001462A1 (en) * 2004-06-24 2006-01-05 Showa Denko K.K. Reflective positive electrode and gallium nitride-based compound semiconductor light-emitting device using the same
JP3924303B2 (ja) * 2005-05-09 2007-06-06 ローム株式会社 窒化物半導体素子およびその製法
JP5198793B2 (ja) * 2007-05-10 2013-05-15 ソニー株式会社 半導体素子およびその製造方法
TW201117416A (en) * 2009-11-06 2011-05-16 Chunghwa Picture Tubes Ltd Single-chip type white light emitting diode device
CN103730543B (zh) * 2012-10-10 2016-12-21 北京时代浩鼎节能技术有限公司 发光二极管的制作方法
CN103107482A (zh) * 2013-01-29 2013-05-15 中国科学院半导体研究所 单模光子晶体垂直腔面发射激光器及其制备方法
TWI607612B (zh) * 2016-11-17 2017-12-01 錼創科技股份有限公司 半導體雷射元件
CN107742824B (zh) * 2017-12-01 2020-04-03 中国科学院长春光学精密机械与物理研究所 一种垂直腔面发射半导体激光器及其制作方法
CN109326958A (zh) * 2019-01-02 2019-02-12 常州纵慧芯光半导体科技有限公司 金属网格大功率垂直腔面发射激光器

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1271550A (en) * 1985-12-24 1990-07-10 Fumio Inaba Semiconductor light emitting device with vertical light emission
JPS63245969A (ja) * 1987-04-01 1988-10-13 Seiko Epson Corp 半導体発光素子及びその製造方法
US5268918A (en) 1991-02-21 1993-12-07 Sony Corporation Semiconductor laser
US5351255A (en) * 1992-05-12 1994-09-27 North Carolina State University Of Raleigh Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
KR100292308B1 (ko) * 1992-06-19 2001-09-17 이데이 노부유끼 반도체장치
GB2270199B (en) * 1992-08-25 1995-05-10 Mitsubishi Cable Ind Ltd Semiconductor light emitting element
US5300791A (en) * 1992-09-29 1994-04-05 Industrial Technology Research Institute Light emitting diode
JP3278951B2 (ja) * 1992-10-23 2002-04-30 ソニー株式会社 オーミック電極の形成方法
WO1994015369A1 (en) * 1992-12-22 1994-07-07 Research Corporation Technologies, Inc. Group ii-vi compound semiconductor light emitting devices and an ohmic contact therefor
US5640409A (en) * 1993-07-02 1997-06-17 Sony Corporation Semiconductor laser
MY111898A (en) * 1993-07-02 2001-02-28 Sony Corp Semiconductor laser
DE4330756A1 (de) * 1993-09-10 1995-03-16 Siemens Ag Lichtemittierendes Bauelement aus II-VI-Halbleitermaterial

Also Published As

Publication number Publication date
JPH0832180A (ja) 1996-02-02
KR960006102A (ko) 1996-02-23
US5617446A (en) 1997-04-01
US5909459A (en) 1999-06-01
DE69510129D1 (de) 1999-07-15
JP3586293B2 (ja) 2004-11-10
EP0692827B1 (de) 1999-06-09
EP0692827A1 (de) 1996-01-17

Similar Documents

Publication Publication Date Title
DE69510129T2 (de) Oberflächenemittierende lumineszente Halbleitervorrichtung
DE69414498T2 (de) Licht-emittierende Halbleitervorrichtung
DE69533276D1 (de) Lichtemittierende Halbleitervorrichtungen
GB9811180D0 (en) Semiconductor light-emitting device
TW581325U (en) Semiconductor light emitting device
DE19921987B4 (de) Licht-Abstrahlende Halbleitervorrichtung mit Gruppe-III-Element-Nitrid-Verbindungen
DE69408374T2 (de) Lichtemittierende Halbleitervorrichtung
DE69811303T2 (de) Elektrolumineszente Vorrichtungen
DE69822354D1 (de) Elektrolumineszente Vorrichtungen
DE69700573D1 (de) Optoelektronische Halbleitervorrichtung
DE69809617T2 (de) Elektrolumineszente Vorrichtungen
DE19823069B8 (de) Halbleiterbauelement
EP0902978A4 (de) Lichtemittierende halbleiteranordnung
TW497759U (en) Semiconductor light emitting device
EP0703630A3 (de) Lichtemittierende Halbleitervorrichtung
DE69506043T2 (de) Lichtemittierende Halbleitervorrichtung
DE69737320D1 (de) Halbleitervorrichtung
DE69223707D1 (de) Halbleiter-Elektronenemittierende Einrichtung
DE69001548T2 (de) Lichtemittierende halbleitervorrichtung.
DE69635180D1 (de) Lichtemittierende Halbleitervorrichtung
DE69420202D1 (de) Lichtemittierende Halbleitervorrichtung
DE59400463D1 (de) Lichtemittierendes Halbleiterbauelement
DE69522737D1 (de) Lichtemittierende II/VI Halbleitervorrichtung
DE69712596T2 (de) Oberflächenmontierbare Halbleitervorrichtung
DE69836932D1 (de) Lichtemittierende Halbleitervorrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee