DE69033518T2 - Im transversalen Mode schwingender Halbleiterlaser - Google Patents

Im transversalen Mode schwingender Halbleiterlaser

Info

Publication number
DE69033518T2
DE69033518T2 DE69033518T DE69033518T DE69033518T2 DE 69033518 T2 DE69033518 T2 DE 69033518T2 DE 69033518 T DE69033518 T DE 69033518T DE 69033518 T DE69033518 T DE 69033518T DE 69033518 T2 DE69033518 T2 DE 69033518T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
transverse mode
laser vibrating
vibrating
transverse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69033518T
Other languages
English (en)
Other versions
DE69033518D1 (de
Inventor
Masaki Okajima
Genichi Hatakoshi
Masayuki Ishikawa
Yutaka Uematsu
Nawoto Motegi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP17808689A external-priority patent/JPH0344085A/ja
Priority claimed from JP01281703A external-priority patent/JP3078553B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69033518D1 publication Critical patent/DE69033518D1/de
Application granted granted Critical
Publication of DE69033518T2 publication Critical patent/DE69033518T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/221—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials containing aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
DE69033518T 1989-07-12 1990-07-12 Im transversalen Mode schwingender Halbleiterlaser Expired - Fee Related DE69033518T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17808689A JPH0344085A (ja) 1989-07-12 1989-07-12 半導体レーザ装置
JP01281703A JP3078553B2 (ja) 1989-10-31 1989-10-31 半導体レーザ装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69033518D1 DE69033518D1 (de) 2000-05-31
DE69033518T2 true DE69033518T2 (de) 2000-12-21

Family

ID=26498383

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69033518T Expired - Fee Related DE69033518T2 (de) 1989-07-12 1990-07-12 Im transversalen Mode schwingender Halbleiterlaser

Country Status (3)

Country Link
US (1) US5065404A (de)
EP (1) EP0408373B1 (de)
DE (1) DE69033518T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2997573B2 (ja) * 1991-02-19 2000-01-11 株式会社東芝 半導体レーザ装置
JP3242967B2 (ja) * 1992-01-31 2001-12-25 株式会社東芝 半導体発光素子
US5311533A (en) * 1992-10-23 1994-05-10 Polaroid Corporation Index-guided laser array with select current paths defined by migration-enhanced dopant incorporation and dopant diffusion
JPH06268334A (ja) * 1993-03-16 1994-09-22 Mitsubishi Kasei Corp レーザーダイオード及びその製造方法
JPH06302906A (ja) * 1993-04-12 1994-10-28 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
EP0674373B1 (de) * 1994-03-22 2000-06-28 Uniphase Opto Holdings, Inc. Halbleiterdiodenlaser und dessen Herstellungsverfahren
US5811839A (en) * 1994-09-01 1998-09-22 Mitsubishi Chemical Corporation Semiconductor light-emitting devices
US5751756A (en) * 1995-09-05 1998-05-12 Matsushita Electronics Corporation Semiconductor laser device for use as a light source of an optical disk or the like
JP3718548B2 (ja) * 1995-10-20 2005-11-24 ソニー株式会社 半導体発光装置の製造方法
JPH09237933A (ja) * 1996-02-29 1997-09-09 Mitsubishi Electric Corp 半導体レーザ，及びその製造方法
TW342545B (en) * 1996-03-28 1998-10-11 Sanyo Electric Co Semiconductor laser element and method for designing same
JP3695720B2 (ja) 1996-06-24 2005-09-14 松下電器産業株式会社 半導体レーザ
WO1998013912A1 (en) * 1996-09-26 1998-04-02 Philips Electronics N.V. Method of manufacturing an optoelectronic semiconductor device comprising a mesa
JPH11251685A (ja) * 1998-03-05 1999-09-17 Toshiba Corp 半導体レーザ
JP2000244059A (ja) * 1999-02-23 2000-09-08 Matsushita Electric Ind Co Ltd 半導体レーザ装置
EP1087480B1 (de) * 1999-09-27 2006-11-15 Sanyo Electric Co., Ltd. Halbleiterlaservorrichtung und Herstellungsverfahren
JP3763459B2 (ja) * 2001-06-26 2006-04-05 シャープ株式会社 半導体レーザ素子及びその製造方法
JP3797151B2 (ja) * 2001-07-05 2006-07-12 ソニー株式会社 レーザダイオード、光学ピックアップ装置、光ディスク装置および光通信装置
JP2003037331A (ja) * 2001-07-26 2003-02-07 Sharp Corp 半導体レーザ装置
US6841409B2 (en) * 2002-01-17 2005-01-11 Matsushita Electric Industrial Co., Ltd. Group III-V compound semiconductor and group III-V compound semiconductor device using the same
JP2003273467A (ja) * 2002-03-15 2003-09-26 Toshiba Corp 半導体レーザおよびその製造方法
JP2004342719A (ja) * 2003-05-14 2004-12-02 Toshiba Corp 半導体レーザ装置及びその製造方法
KR100571818B1 (ko) * 2003-10-08 2006-04-17 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
KR20060038057A (ko) * 2004-10-29 2006-05-03 삼성전기주식회사 반도체 레이저 소자 및 그 제조 방법
WO2019002694A1 (en) * 2017-06-30 2019-01-03 Oulun Yliopisto METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL APPARATUS AND APPARATUS

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654083A (en) * 1979-10-05 1981-05-13 Nec Corp Semiconductor laser apparatus
JPS5769793A (en) * 1980-10-16 1982-04-28 Mitsubishi Electric Corp Semiconductor laser device
GB2105099B (en) * 1981-07-02 1985-06-12 Standard Telephones Cables Ltd Injection laser
JPS6014482A (ja) * 1983-07-04 1985-01-25 Toshiba Corp 半導体レ−ザ装置
US4615032A (en) * 1984-07-13 1986-09-30 At&T Bell Laboratories Self-aligned rib-waveguide high power laser
JPS63164290A (ja) * 1986-12-25 1988-07-07 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS63181390A (ja) * 1987-01-22 1988-07-26 Mitsubishi Electric Corp 半導体レ−ザ
JP2656482B2 (ja) * 1987-03-11 1997-09-24 株式会社日立製作所 半導体レーザ装置
DE68909632T2 (de) * 1988-02-09 1994-03-10 Toshiba Kawasaki Kk Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren.
US5034957A (en) * 1988-02-10 1991-07-23 Kabushiki Kaisha Toshiba Semiconductor laser device
JP2585732B2 (ja) * 1988-07-27 1997-02-26 日立電子株式会社 輪郭強調処理回路
JPH0239988A (ja) * 1988-07-29 1990-02-08 Kanzaki Paper Mfg Co Ltd 感熱記録体の製造方法
US4961197A (en) * 1988-09-07 1990-10-02 Hitachi, Ltd. Semiconductor laser device

Also Published As

Publication number Publication date
DE69033518D1 (de) 2000-05-31
EP0408373B1 (de) 2000-04-26
US5065404A (en) 1991-11-12
EP0408373A3 (en) 1991-09-18
EP0408373A2 (de) 1991-01-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee