DE69005132D1 - Halbleiterlaser. - Google Patents

Halbleiterlaser.

Info

Publication number
DE69005132D1
DE69005132D1 DE90300747T DE69005132T DE69005132D1 DE 69005132 D1 DE69005132 D1 DE 69005132D1 DE 90300747 T DE90300747 T DE 90300747T DE 69005132 T DE69005132 T DE 69005132T DE 69005132 D1 DE69005132 D1 DE 69005132D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE90300747T
Other languages
English (en)
Other versions
DE69005132T2 (de
Inventor
Hajime Sakiyama
Haruo Tanaka
Masato Mushiage
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1014348A external-priority patent/JPH0656911B2/ja
Priority claimed from JP1014345A external-priority patent/JPH02194681A/ja
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of DE69005132D1 publication Critical patent/DE69005132D1/de
Application granted granted Critical
Publication of DE69005132T2 publication Critical patent/DE69005132T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/071—Heating, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/094—Laser beam treatment of compound devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/095—Laser devices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE90300747T 1989-01-24 1990-01-24 Halbleiterlaser. Expired - Fee Related DE69005132T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1014348A JPH0656911B2 (ja) 1989-01-24 1989-01-24 半導体レーザの製造方法
JP1014345A JPH02194681A (ja) 1989-01-24 1989-01-24 半導体レーザ

Publications (2)

Publication Number Publication Date
DE69005132D1 true DE69005132D1 (de) 1994-01-27
DE69005132T2 DE69005132T2 (de) 1994-03-31

Family

ID=26350268

Family Applications (1)

Application Number Title Priority Date Filing Date
DE90300747T Expired - Fee Related DE69005132T2 (de) 1989-01-24 1990-01-24 Halbleiterlaser.

Country Status (6)

Country Link
US (2) US4999841A (de)
EP (1) EP0380322B1 (de)
KR (1) KR930004128B1 (de)
CA (1) CA2008379C (de)
DE (1) DE69005132T2 (de)
MY (1) MY104857A (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2008379C (en) * 1989-01-24 1993-08-31 Hajime Sakiyama Semiconductor lasers
JP2706369B2 (ja) * 1990-11-26 1998-01-28 シャープ株式会社 化合物半導体の成長方法及び半導体レーザの製造方法
US5274656A (en) * 1991-06-12 1993-12-28 Sumitomo Electric Industries, Ltd. Semiconductor laser
FR2684805B1 (fr) * 1991-12-04 1998-08-14 France Telecom Dispositif optoelectronique a tres faible resistance serie.
GB2265755B (en) * 1992-03-31 1995-11-08 Matsushita Electronics Corp Semiconductor laser device and its fabrication method
JPH0750445A (ja) * 1993-06-02 1995-02-21 Rohm Co Ltd 半導体レーザの製法
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
US6400743B1 (en) * 1999-08-05 2002-06-04 Fuji Photo Film Co., Ltd. High-power semiconductor laser device having current confinement structure and index-guided structure
US20040010446A1 (en) * 2002-07-08 2004-01-15 Marko Vanska Mobile customer relationship management
US7274909B2 (en) * 2002-10-31 2007-09-25 Nokia Corporation Method and system for selecting data items for service requests
US7072672B1 (en) * 2002-11-01 2006-07-04 Nokia Corporation Disposable mini-applications
US7407107B2 (en) 2003-12-08 2008-08-05 Nokia Corporation Apparatus, system, method and computer program product for creating shortcuts to functions in a personal communication device
US7304585B2 (en) 2004-07-02 2007-12-04 Nokia Corporation Initiation of actions with compressed action language representations
JP5818972B2 (ja) * 2012-03-30 2015-11-18 帝人株式会社 半導体積層体及びその製造方法、半導体デバイスの製造方法、半導体デバイス、ドーパント組成物、ドーパント注入層、並びにドープ層の形成方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS609356B2 (ja) * 1975-08-28 1985-03-09 富士通株式会社 半導体発光装置の製法
JPS59227179A (ja) * 1983-06-08 1984-12-20 Hitachi Ltd 半導体レ−ザ装置及びその製造方法
JPS6014482A (ja) * 1983-07-04 1985-01-25 Toshiba Corp 半導体レ−ザ装置
JPS6042885A (ja) * 1983-08-19 1985-03-07 Hitachi Ltd 半導体レ−ザ装置
JPS60110188A (ja) * 1983-11-18 1985-06-15 Sharp Corp 半導体レ−ザ素子
JPS60225488A (ja) * 1984-04-23 1985-11-09 Sony Corp 半導体レ−ザ−
JPS61119090A (ja) * 1984-11-14 1986-06-06 Rohm Co Ltd 半導体レ−ザの製造方法
JPS61166090A (ja) * 1985-01-17 1986-07-26 Rohm Co Ltd 半導体レ−ザの製造方法
US4728707A (en) * 1985-03-18 1988-03-01 Daikin Industries Ltd. Water- and oil-repellent
JPH06101433B2 (ja) * 1985-04-22 1994-12-12 日本電気株式会社 半導体素子の製造方法
JPS6370587A (ja) * 1986-09-12 1988-03-30 Sharp Corp 半導体レ−ザ
US4922499A (en) * 1988-02-09 1990-05-01 Kabushiki Kaisha Toshiba Semiconductor laser device and the manufacturing method thereof
JPH01220492A (ja) * 1988-02-26 1989-09-04 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
JPH0221683A (ja) * 1988-07-08 1990-01-24 Mitsubishi Electric Corp 半導体レーザ装置
GB2222307B (en) * 1988-07-22 1992-04-01 Mitsubishi Electric Corp Semiconductor laser
US4962057A (en) * 1988-10-13 1990-10-09 Xerox Corporation Method of in situ photo induced evaporation enhancement of compound thin films during or after epitaxial growth
CA2008379C (en) * 1989-01-24 1993-08-31 Hajime Sakiyama Semiconductor lasers
US4980314A (en) * 1989-06-06 1990-12-25 At&T Bell Laboratories Vapor processing of a substrate

Also Published As

Publication number Publication date
EP0380322A3 (de) 1991-04-17
EP0380322B1 (de) 1993-12-15
CA2008379A1 (en) 1990-07-24
MY104857A (en) 1994-06-30
US5153148A (en) 1992-10-06
KR930004128B1 (ko) 1993-05-20
KR900012390A (ko) 1990-08-04
EP0380322A2 (de) 1990-08-01
DE69005132T2 (de) 1994-03-31
CA2008379C (en) 1993-08-31
US4999841A (en) 1991-03-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee