DE69018732D1 - Halbleiterlaser. - Google Patents

Halbleiterlaser.

Info

Publication number
DE69018732D1
DE69018732D1 DE69018732T DE69018732T DE69018732D1 DE 69018732 D1 DE69018732 D1 DE 69018732D1 DE 69018732 T DE69018732 T DE 69018732T DE 69018732 T DE69018732 T DE 69018732T DE 69018732 D1 DE69018732 D1 DE 69018732D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69018732T
Other languages
English (en)
Other versions
DE69018732T2 (de
Inventor
Hironobu C O Sony Corpor Narui
Hiroshi C O Sony Co Yoshimatsu
Shoji C O Sony Corporat Hirata
Masafumi C O Sony Corpor Ozawa
Yoshifumi C O Sony Corpor Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1210382A external-priority patent/JP2822470B2/ja
Priority claimed from JP1212600A external-priority patent/JP3005998B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69018732D1 publication Critical patent/DE69018732D1/de
Publication of DE69018732T2 publication Critical patent/DE69018732T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0658—Self-pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE69018732T 1989-08-15 1990-08-15 Halbleiterlaser. Expired - Fee Related DE69018732T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1210382A JP2822470B2 (ja) 1989-08-15 1989-08-15 半導体レーザ
JP1212600A JP3005998B2 (ja) 1989-08-18 1989-08-18 半導体レーザの製造方法

Publications (2)

Publication Number Publication Date
DE69018732D1 true DE69018732D1 (de) 1995-05-24
DE69018732T2 DE69018732T2 (de) 1995-08-31

Family

ID=26518019

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69018732T Expired - Fee Related DE69018732T2 (de) 1989-08-15 1990-08-15 Halbleiterlaser.

Country Status (3)

Country Link
US (1) US5111469A (de)
EP (1) EP0413567B1 (de)
DE (1) DE69018732T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04236468A (ja) * 1991-01-18 1992-08-25 Toshiba Corp 光通信用発光ダイオ−ド素子
JPH04317384A (ja) * 1991-04-16 1992-11-09 Mitsubishi Electric Corp 半導体発光装置
US5255280A (en) * 1991-04-22 1993-10-19 Sony Corporation Semiconductor laser
JP2823476B2 (ja) * 1992-05-14 1998-11-11 三菱電機株式会社 半導体レーザおよびその製造方法
GB2299710B (en) * 1992-05-14 1997-01-08 Mitsubishi Electric Corp Semiconductor laser and method for manufacturing semiconductor laser
JP3154198B2 (ja) * 1992-08-25 2001-04-09 ソニー株式会社 半導体レーザとその製法
JPH06132608A (ja) * 1992-10-20 1994-05-13 Sony Corp 半導体レーザ及びその製造方法
JPH0715082A (ja) * 1993-06-24 1995-01-17 Mitsubishi Electric Corp 半導体パルセーションレーザ
JP2982619B2 (ja) * 1994-06-29 1999-11-29 日本電気株式会社 半導体光導波路集積型受光素子
JP3199158B2 (ja) * 1995-12-26 2001-08-13 シャープ株式会社 半導体レーザ装置
JPH1075011A (ja) * 1996-08-30 1998-03-17 Sony Corp 半導体レーザ
US5850411A (en) * 1996-09-17 1998-12-15 Sdl, Inc Transverse electric (TE) polarization mode AlGaInP/GaAs red laser diodes, especially with self-pulsating operation
JP2000101200A (ja) * 1998-09-25 2000-04-07 Sony Corp 半導体レーザーおよびマルチ半導体レーザー
JP5223439B2 (ja) * 2007-05-28 2013-06-26 ソニー株式会社 半導体発光素子
JP2009071172A (ja) * 2007-09-14 2009-04-02 Sony Corp 半導体発光素子及びその製造方法、並びに、下地層の形成方法
JP2017050318A (ja) 2015-08-31 2017-03-09 ルネサスエレクトロニクス株式会社 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826834B2 (ja) * 1979-09-28 1983-06-06 株式会社日立製作所 半導体レ−ザ−装置
GB2114808B (en) * 1981-12-01 1985-10-09 Standard Telephones Cables Ltd Semiconductor laser manufacture
JPS6034089A (ja) * 1983-08-04 1985-02-21 Nec Corp 光双安定半導体レ−ザ
JPS6076184A (ja) * 1983-10-03 1985-04-30 Nec Corp 半導体レ−ザ
JPS60140774A (ja) * 1983-12-28 1985-07-25 Toshiba Corp 半導体レ−ザ
GB8516853D0 (en) * 1985-07-03 1985-08-07 British Telecomm Manufacture of semiconductor structures
JPS6425590A (en) * 1987-07-22 1989-01-27 Matsushita Electric Ind Co Ltd Manufacture of semiconductor laser

Also Published As

Publication number Publication date
DE69018732T2 (de) 1995-08-31
EP0413567B1 (de) 1995-04-19
EP0413567A3 (en) 1991-10-09
US5111469A (en) 1992-05-05
EP0413567A2 (de) 1991-02-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee