DE3782701D1 - Halbleiterlaser. - Google Patents
Halbleiterlaser.Info
- Publication number
- DE3782701D1 DE3782701D1 DE8787111277T DE3782701T DE3782701D1 DE 3782701 D1 DE3782701 D1 DE 3782701D1 DE 8787111277 T DE8787111277 T DE 8787111277T DE 3782701 T DE3782701 T DE 3782701T DE 3782701 D1 DE3782701 D1 DE 3782701D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- laser
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06821—Stabilising other output parameters than intensity or frequency, e.g. phase, polarisation or far-fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1021—Coupled cavities
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61205993A JPS6362388A (ja) | 1986-09-03 | 1986-09-03 | 半導体レ−ザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3782701D1 true DE3782701D1 (de) | 1992-12-24 |
DE3782701T2 DE3782701T2 (de) | 1993-05-27 |
Family
ID=16516130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787111277T Expired - Fee Related DE3782701T2 (de) | 1986-09-03 | 1987-08-04 | Halbleiterlaser. |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0258665B1 (de) |
JP (1) | JPS6362388A (de) |
DE (1) | DE3782701T2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991001056A1 (en) * | 1989-07-06 | 1991-01-24 | Australian Electro Optics Pty. Ltd. | Segmented, fibre coupled diode laser arrays |
GB0222944D0 (en) * | 2002-10-04 | 2002-11-13 | Renishaw Plc | Laser system |
JP2014165392A (ja) * | 2013-02-26 | 2014-09-08 | Nippon Telegr & Teleph Corp <Ntt> | 光送信器およびその制御方法 |
JP2022506323A (ja) * | 2018-11-05 | 2022-01-17 | 華為技術有限公司 | 外部反射戻り光耐性レーザ |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5854515B2 (ja) * | 1976-04-19 | 1983-12-05 | 日本電気株式会社 | 単一軸モ−ド発振半導体レ−ザ装置 |
JPS606553B2 (ja) * | 1977-08-30 | 1985-02-19 | 富士通株式会社 | 半導体発光装置 |
JPS56150885A (en) * | 1980-04-23 | 1981-11-21 | Nippon Telegr & Teleph Corp <Ntt> | Oscillating frequency stabilized semiconductor laser device |
EP0108562A1 (de) * | 1982-11-05 | 1984-05-16 | British Telecommunications | Verfahren und Vorrichtung zum Steuern von Lasern |
WO1984003399A1 (en) * | 1983-02-25 | 1984-08-30 | American Telephone & Telegraph | Multicavity optical device and applications thereof |
JPS60187078A (ja) * | 1984-03-06 | 1985-09-24 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
JPS6254991A (ja) * | 1985-09-04 | 1987-03-10 | Hitachi Ltd | 半導体レ−ザ装置 |
JPS6344783A (ja) * | 1986-08-12 | 1988-02-25 | Fujitsu Ltd | レ−ザ光源の周波数安定化装置 |
-
1986
- 1986-09-03 JP JP61205993A patent/JPS6362388A/ja active Pending
-
1987
- 1987-08-04 DE DE8787111277T patent/DE3782701T2/de not_active Expired - Fee Related
- 1987-08-04 EP EP87111277A patent/EP0258665B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS6362388A (ja) | 1988-03-18 |
EP0258665B1 (de) | 1992-11-19 |
EP0258665A3 (en) | 1988-09-28 |
DE3782701T2 (de) | 1993-05-27 |
EP0258665A2 (de) | 1988-03-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3751535D1 (de) | Halbleiterlaser. | |
DE3788546D1 (de) | Halbleiterlasermodul. | |
DE3676867D1 (de) | Halbleiterlaser. | |
DE3584702D1 (de) | Halbleiterlaservorrichtung. | |
DE3584330D1 (de) | Halbleiterlaservorrichtung. | |
DE3873689D1 (de) | Halbleiterlaser. | |
DE3750995D1 (de) | Halbleiterlaservorrichtung. | |
DE3786339D1 (de) | Halbleiterlaservorrichtung. | |
DE68908646D1 (de) | Halbleiterlaser. | |
DE3575501D1 (de) | Halbleiterlaser. | |
DE3674959D1 (de) | Halbleiterlaser. | |
DE3884503D1 (de) | Halbleiterlaser. | |
DE3687102D1 (de) | Halbleiterlaser. | |
DE3579991D1 (de) | Halbleiterlaser. | |
DE3688002D1 (de) | Halbleiter-laser. | |
DE68912852D1 (de) | Halbleiterlaser. | |
DE3586934D1 (de) | Halbleiterlaser. | |
DE3778510D1 (de) | Halbleiterlaser. | |
DE3789832D1 (de) | Halbleiterlaser-Vorrichtung. | |
NO872195D0 (no) | Laseranordning. | |
DE69018732D1 (de) | Halbleiterlaser. | |
DE3776186D1 (de) | Halbleiterlaser-vorrichtung. | |
DE3581557D1 (de) | Halbleiterlaser. | |
DE3579826D1 (de) | Halbleiterlaser. | |
DE69005132D1 (de) | Halbleiterlaser. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |