DE3879270D1 - Halbleiterlaser. - Google Patents

Halbleiterlaser.

Info

Publication number
DE3879270D1
DE3879270D1 DE8888107892T DE3879270T DE3879270D1 DE 3879270 D1 DE3879270 D1 DE 3879270D1 DE 8888107892 T DE8888107892 T DE 8888107892T DE 3879270 T DE3879270 T DE 3879270T DE 3879270 D1 DE3879270 D1 DE 3879270D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888107892T
Other languages
English (en)
Other versions
DE3879270T2 (de
Inventor
K K Toshiba Matsumoto
K K Toshiba Kurihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3879270D1 publication Critical patent/DE3879270D1/de
Publication of DE3879270T2 publication Critical patent/DE3879270T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE8888107892T 1987-05-18 1988-05-17 Halbleiterlaser. Expired - Fee Related DE3879270T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62118905A JPH0797689B2 (ja) 1987-05-18 1987-05-18 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
DE3879270D1 true DE3879270D1 (de) 1993-04-22
DE3879270T2 DE3879270T2 (de) 1993-07-22

Family

ID=14748069

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888107892T Expired - Fee Related DE3879270T2 (de) 1987-05-18 1988-05-17 Halbleiterlaser.

Country Status (4)

Country Link
US (1) US4879724A (de)
EP (1) EP0291936B1 (de)
JP (1) JPH0797689B2 (de)
DE (1) DE3879270T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0231488A (ja) * 1988-07-20 1990-02-01 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
JPH03126283A (ja) * 1989-10-11 1991-05-29 Toshiba Corp 窓構造半導体レーザ素子の製造方法
JP3849967B2 (ja) * 2000-05-19 2006-11-22 シャープ株式会社 光ピックアップ
JP2004141854A (ja) * 2002-08-28 2004-05-20 Fuji Xerox Co Ltd シュレッダ装置およびその方法
JP2005294394A (ja) * 2004-03-31 2005-10-20 Toyoda Gosei Co Ltd 半導体レーザ及びその製造方法
US9007723B1 (en) 2013-12-13 2015-04-14 HGST Netherlands B.V. Microwave-assisted magnetic recording (MAMR) head employing advanced current control to establish a magnetic resonance state
US8908481B1 (en) 2014-01-27 2014-12-09 HGST Netherlands B.V. Thermally-assisted magnetic recording head that suppresses effects of mode hopping

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211791A (en) * 1981-06-24 1982-12-25 Sharp Corp Semiconductor laser element
JPS58197787A (ja) * 1982-05-12 1983-11-17 Nec Corp 半導体レ−ザ
US4546481A (en) * 1982-05-28 1985-10-08 Sharp Kabushiki Kaisha Window structure semiconductor laser
DE3376936D1 (en) * 1982-05-28 1988-07-07 Sharp Kk Semiconductor laser
JPS5940592A (ja) * 1982-08-30 1984-03-06 Sharp Corp 半導体レ−ザ素子
JPS59152685A (ja) * 1983-02-21 1984-08-31 Sharp Corp 半導体レ−ザ素子
EP0124051B1 (de) * 1983-04-27 1990-12-12 Kabushiki Kaisha Toshiba Halbleiterlaser
JPS601881A (ja) * 1983-06-17 1985-01-08 Sharp Corp 半導体レ−ザ素子
JPS6054489A (ja) * 1983-09-05 1985-03-28 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS6297383A (ja) * 1985-05-31 1987-05-06 Mitsubishi Electric Corp 半導体レ−ザ装置

Also Published As

Publication number Publication date
DE3879270T2 (de) 1993-07-22
US4879724A (en) 1989-11-07
EP0291936A3 (en) 1990-08-08
EP0291936A2 (de) 1988-11-23
JPS63284876A (ja) 1988-11-22
JPH0797689B2 (ja) 1995-10-18
EP0291936B1 (de) 1993-03-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee