DE3783421D1 - Halbleiterlaser-vielfachanordnung. - Google Patents
Halbleiterlaser-vielfachanordnung.Info
- Publication number
- DE3783421D1 DE3783421D1 DE8787308920T DE3783421T DE3783421D1 DE 3783421 D1 DE3783421 D1 DE 3783421D1 DE 8787308920 T DE8787308920 T DE 8787308920T DE 3783421 T DE3783421 T DE 3783421T DE 3783421 D1 DE3783421 D1 DE 3783421D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- multiple arrangement
- laser multiple
- arrangement
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4081—Near-or far field control
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61239478A JPS6393186A (ja) | 1986-10-08 | 1986-10-08 | 半導体レ−ザアレイ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3783421D1 true DE3783421D1 (de) | 1993-02-18 |
DE3783421T2 DE3783421T2 (de) | 1993-05-06 |
Family
ID=17045369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787308920T Expired - Fee Related DE3783421T2 (de) | 1986-10-08 | 1987-10-08 | Halbleiterlaser-vielfachanordnung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4823353A (de) |
EP (1) | EP0263709B1 (de) |
JP (1) | JPS6393186A (de) |
DE (1) | DE3783421T2 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07120834B2 (ja) * | 1986-12-25 | 1995-12-20 | 松下電器産業株式会社 | 半導体レ−ザアレイ装置 |
US7532651B2 (en) * | 2007-05-02 | 2009-05-12 | Alces Technology, Inc. | Illumination system for optical modulators |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4246548A (en) * | 1974-08-14 | 1981-01-20 | International Business Machines Corporation | Coherent semiconductor injection laser array |
CA1238707A (en) * | 1984-10-19 | 1988-06-28 | Richard D. Clayton | Phased linear laser array |
US4624000A (en) * | 1984-11-01 | 1986-11-18 | Xerox Corporation | Phased array semiconductor lasers with preferred emission in a single lobe |
GB2182168B (en) * | 1985-10-25 | 1989-10-25 | Hitachi Ltd | Phased-array semiconductor laser apparatus |
-
1986
- 1986-10-08 JP JP61239478A patent/JPS6393186A/ja active Granted
-
1987
- 1987-10-08 DE DE8787308920T patent/DE3783421T2/de not_active Expired - Fee Related
- 1987-10-08 US US07/106,740 patent/US4823353A/en not_active Expired - Lifetime
- 1987-10-08 EP EP87308920A patent/EP0263709B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0263709B1 (de) | 1993-01-07 |
JPS6393186A (ja) | 1988-04-23 |
US4823353A (en) | 1989-04-18 |
DE3783421T2 (de) | 1993-05-06 |
EP0263709A2 (de) | 1988-04-13 |
EP0263709A3 (en) | 1989-05-31 |
JPH0440877B2 (de) | 1992-07-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |