DE3586934D1 - Halbleiterlaser. - Google Patents

Halbleiterlaser.

Info

Publication number
DE3586934D1
DE3586934D1 DE8585306635T DE3586934T DE3586934D1 DE 3586934 D1 DE3586934 D1 DE 3586934D1 DE 8585306635 T DE8585306635 T DE 8585306635T DE 3586934 T DE3586934 T DE 3586934T DE 3586934 D1 DE3586934 D1 DE 3586934D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585306635T
Other languages
English (en)
Other versions
DE3586934T2 (de
Inventor
Tadashi Fukuzawa
Hiroyoshi Matsumura
Shinji Tsuji
Hitoshi Nakamura
Kenji Hiruma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3586934D1 publication Critical patent/DE3586934D1/de
Publication of DE3586934T2 publication Critical patent/DE3586934T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE8585306635T 1984-09-28 1985-09-18 Halbleiterlaser. Expired - Fee Related DE3586934T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59201657A JPH0656906B2 (ja) 1984-09-28 1984-09-28 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
DE3586934D1 true DE3586934D1 (de) 1993-02-11
DE3586934T2 DE3586934T2 (de) 1993-04-29

Family

ID=16444725

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585306635T Expired - Fee Related DE3586934T2 (de) 1984-09-28 1985-09-18 Halbleiterlaser.

Country Status (4)

Country Link
US (1) US4720836A (de)
EP (1) EP0177221B1 (de)
JP (1) JPH0656906B2 (de)
DE (1) DE3586934T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4786951A (en) * 1985-02-12 1988-11-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor optical element and a process for producing the same
DE3808875A1 (de) * 1988-03-17 1989-09-28 Standard Elektrik Lorenz Ag Halbleiteranordnung zur erzeugung einer periodischen brechungsindexverteilung und/oder periodischen verstaerkungsverteilung
JP2622143B2 (ja) * 1988-03-28 1997-06-18 キヤノン株式会社 分布帰還型半導体レーザ及び分布帰還型半導体レーザの作成方法
DE58906978D1 (de) * 1988-09-22 1994-03-24 Siemens Ag Abstimmbarer DFB-Laser.
DE3914001A1 (de) * 1989-04-27 1990-10-31 Siemens Ag Halbleiterlaser mit eingepraegtem modenspektrum und verfahren zu dessen herstellung
EP0406005B1 (de) * 1989-06-30 1996-06-12 Optical Measurement Technology Development Co. Ltd. Halbleiterlaser und Verfahren zur Herstellung desselben
DE3923354A1 (de) * 1989-07-14 1991-01-24 Licentia Gmbh Halbleiterlaser
US5247536A (en) * 1990-07-25 1993-09-21 Kabushiki Kaisha Toshiba Semiconductor laser distributed feedback laser including mode interrupt means
JPH0681201A (ja) * 1992-08-31 1994-03-22 Azu:Kk トランクス
IT1264646B1 (it) * 1993-07-02 1996-10-04 Alcatel Italia Laser a semiconduttore a modulazione di guadagno
US5751753A (en) * 1995-07-24 1998-05-12 Fujitsu Limited Semiconductor laser with lattice mismatch
US5920588A (en) * 1996-04-11 1999-07-06 Fujitsu Limited Method and device for generation of phase conjugate light and wavelength conversion, and system having the device
GB0103838D0 (en) * 2001-02-16 2001-04-04 Univ Glasgow Improvements in or relating to semiconductor lasers
GB0206226D0 (en) * 2002-03-16 2002-05-01 Intense Photonics Ltd Electro-absorption modulator with broad optical bandwidth
GB2504271A (en) 2012-07-23 2014-01-29 Black & Decker Inc Saw with Elastically Deformable Drive Belt
GB2504272A (en) 2012-07-23 2014-01-29 Black & Decker Inc A Support Preventing Tipping of a Mitre Saw
GB2504277A (en) 2012-07-23 2014-01-29 Black & Decker Inc Saw with Fan Cooling Drive Belt
GB2504275A (en) 2012-07-23 2014-01-29 Black & Decker Inc Compact Drive Mechanism for Sliding Compound Mitre Saw
GB2507943A (en) 2012-07-23 2014-05-21 Black & Decker Inc Dust removal for Saw
GB201913317D0 (en) 2019-09-16 2019-10-30 Black & Decker Inc Saw

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5245888A (en) * 1975-10-09 1977-04-11 Sony Corp Semiconductor laser device
JPS57152178A (en) * 1981-03-17 1982-09-20 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light emitting device with super lattice structure
US4400813A (en) * 1981-07-20 1983-08-23 Bell Telephone Laboratories, Incorporated Crenelated-ridge waveguide laser
US4594603A (en) * 1982-04-22 1986-06-10 Board Of Trustees Of The University Of Illinois Semiconductor device with disordered active region
JPS58196089A (ja) * 1982-05-12 1983-11-15 Hitachi Ltd 半導体レ−ザ−素子
JPS59139691A (ja) * 1983-01-31 1984-08-10 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置
JPS60217690A (ja) * 1984-04-13 1985-10-31 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置およびその製造方法

Also Published As

Publication number Publication date
EP0177221B1 (de) 1992-12-30
US4720836A (en) 1988-01-19
JPH0656906B2 (ja) 1994-07-27
EP0177221A2 (de) 1986-04-09
JPS6180882A (ja) 1986-04-24
EP0177221A3 (en) 1987-09-30
DE3586934T2 (de) 1993-04-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee