DE3575243D1 - Halbleiterlaser. - Google Patents
Halbleiterlaser.Info
- Publication number
- DE3575243D1 DE3575243D1 DE8585301612T DE3575243T DE3575243D1 DE 3575243 D1 DE3575243 D1 DE 3575243D1 DE 8585301612 T DE8585301612 T DE 8585301612T DE 3575243 T DE3575243 T DE 3575243T DE 3575243 D1 DE3575243 D1 DE 3575243D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- laser
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
- H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59048406A JPS60192379A (ja) | 1984-03-12 | 1984-03-12 | 半導体レ−ザ装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3575243D1 true DE3575243D1 (de) | 1990-02-08 |
Family
ID=12802420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585301612T Expired - Fee Related DE3575243D1 (de) | 1984-03-12 | 1985-03-08 | Halbleiterlaser. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4674094A (de) |
EP (1) | EP0155151B1 (de) |
JP (1) | JPS60192379A (de) |
DE (1) | DE3575243D1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6142188A (ja) * | 1984-08-03 | 1986-02-28 | Hitachi Ltd | 半導体レ−ザ装置 |
US5136601A (en) * | 1984-11-19 | 1992-08-04 | Hitachi, Ltd. | Semiconductor laser |
JPS622686A (ja) * | 1985-06-28 | 1987-01-08 | Mitsubishi Electric Corp | 半導体レ−ザ装置 |
JPS6373693A (ja) * | 1986-09-17 | 1988-04-04 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置 |
JPH0646669B2 (ja) * | 1987-07-28 | 1994-06-15 | 日本電気株式会社 | 半導体レ−ザ及びその製造方法 |
JPS6457786A (en) * | 1987-08-28 | 1989-03-06 | Mitsubishi Electric Corp | Manufacture of semiconductor laser device |
JP2526962B2 (ja) * | 1988-01-14 | 1996-08-21 | 三菱電機株式会社 | 半導体レ―ザ |
JPH069280B2 (ja) * | 1988-06-21 | 1994-02-02 | 松下電器産業株式会社 | 半導体レーザ装置 |
US5023944A (en) * | 1989-09-05 | 1991-06-11 | General Dynamics Corp./Electronics Division | Optical resonator structures |
JP2687668B2 (ja) * | 1990-04-17 | 1997-12-08 | 日本電気株式会社 | 高出力半導体レーザ素子及びその製造方法 |
US6925101B2 (en) | 2000-06-08 | 2005-08-02 | Nichia Corporation | Semiconductor laser device, and method of manufacturing the same |
JP4320167B2 (ja) * | 2002-12-12 | 2009-08-26 | 忠弘 大見 | 半導体素子及びシリコン酸化窒化膜の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54115088A (en) * | 1978-02-28 | 1979-09-07 | Nec Corp | Double hetero junction laser element of stripe type |
US4429395A (en) * | 1981-06-01 | 1984-01-31 | Rca Corporation | Semiconductor laser |
US4426701A (en) * | 1981-12-23 | 1984-01-17 | Rca Corporation | Constricted double heterostructure semiconductor laser |
EP0095826B1 (de) * | 1982-05-28 | 1988-06-01 | Sharp Kabushiki Kaisha | Halbleiterlaser |
JPS5961982A (ja) * | 1982-09-30 | 1984-04-09 | Sony Corp | 半導体レ−ザ− |
-
1984
- 1984-03-12 JP JP59048406A patent/JPS60192379A/ja active Pending
-
1985
- 1985-02-07 US US06/699,442 patent/US4674094A/en not_active Expired - Fee Related
- 1985-03-08 EP EP85301612A patent/EP0155151B1/de not_active Expired - Lifetime
- 1985-03-08 DE DE8585301612T patent/DE3575243D1/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US4674094A (en) | 1987-06-16 |
JPS60192379A (ja) | 1985-09-30 |
EP0155151A2 (de) | 1985-09-18 |
EP0155151A3 (en) | 1986-12-17 |
EP0155151B1 (de) | 1990-01-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |