DE3583010D1 - Halbleiterphotodetektor. - Google Patents

Halbleiterphotodetektor.

Info

Publication number
DE3583010D1
DE3583010D1 DE8585309306T DE3583010T DE3583010D1 DE 3583010 D1 DE3583010 D1 DE 3583010D1 DE 8585309306 T DE8585309306 T DE 8585309306T DE 3583010 T DE3583010 T DE 3583010T DE 3583010 D1 DE3583010 D1 DE 3583010D1
Authority
DE
Germany
Prior art keywords
semiconductor photodetector
photodetector
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585309306T
Other languages
English (en)
Inventor
Shuzo Kagawa
Junji Komeno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3583010D1 publication Critical patent/DE3583010D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/015—Capping layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
DE8585309306T 1984-12-22 1985-12-20 Halbleiterphotodetektor. Expired - Fee Related DE3583010D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59269652A JPS61172381A (ja) 1984-12-22 1984-12-22 ＩｎＰ系化合物半導体装置

Publications (1)

Publication Number Publication Date
DE3583010D1 true DE3583010D1 (de) 1991-07-04

Family

ID=17475331

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585309306T Expired - Fee Related DE3583010D1 (de) 1984-12-22 1985-12-20 Halbleiterphotodetektor.

Country Status (5)

Country Link
US (1) US4906583A (de)
EP (1) EP0186460B1 (de)
JP (1) JPS61172381A (de)
KR (1) KR890004963B1 (de)
DE (1) DE3583010D1 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62256478A (ja) * 1986-04-30 1987-11-09 Sumitomo Electric Ind Ltd 化合物半導体装置
GB8703592D0 (en) * 1987-02-17 1987-03-25 British Telecomm Capping layer fabrication
US4807006A (en) * 1987-06-19 1989-02-21 International Business Machines Corporation Heterojunction interdigitated schottky barrier photodetector
JPS6473774A (en) * 1987-09-16 1989-03-20 Sumitomo Electric Industries Pin photodiode of ingaas/inp
US5047832A (en) * 1989-03-10 1991-09-10 Sumitomo Electric Industries, Ltd. Electrode structure for III-V compound semiconductor element and method of manufacturing the same
US5115294A (en) * 1989-06-29 1992-05-19 At&T Bell Laboratories Optoelectronic integrated circuit
JPH03220782A (ja) * 1990-01-25 1991-09-27 Mitsubishi Electric Corp 半導体受光装置
JP2970815B2 (ja) * 1990-04-11 1999-11-02 株式会社東芝 半導体受光素子
JPH07123170B2 (ja) * 1990-08-07 1995-12-25 光計測技術開発株式会社 受光素子
JPH0513798A (ja) * 1991-07-01 1993-01-22 Mitsubishi Electric Corp 半導体受光装置
GB9118338D0 (en) * 1991-08-27 1991-10-16 Secretary Trade Ind Brit A radiation detector for detecting infrared radiation
JP3047385B2 (ja) * 1991-10-25 2000-05-29 住友電気工業株式会社 受光素子
JP3288741B2 (ja) * 1992-02-07 2002-06-04 住友電気工業株式会社 半導体受光素子の製造方法
JPH05235396A (ja) * 1992-02-24 1993-09-10 Sumitomo Electric Ind Ltd 半導体受光装置
US5391896A (en) * 1992-09-02 1995-02-21 Midwest Research Institute Monolithic multi-color light emission/detection device
JP2910696B2 (ja) * 1996-09-20 1999-06-23 日本電気株式会社 半導体光検出器
US6262465B1 (en) * 1998-09-25 2001-07-17 Picometrix, Inc. Highly-doped P-type contact for high-speed, front-side illuminated photodiode
US6326649B1 (en) * 1999-01-13 2001-12-04 Agere Systems, Inc. Pin photodiode having a wide bandwidth
US6573581B1 (en) * 1999-03-01 2003-06-03 Finisar Corporation Reduced dark current pin photo diodes using intentional doping
CA2307745A1 (en) * 1999-07-15 2001-01-15 Sumitomo Electric Industries, Ltd. Photodiode
KR100366046B1 (ko) * 2000-06-29 2002-12-27 삼성전자 주식회사 에벌란치 포토다이오드 제조방법
JP2002050785A (ja) * 2000-08-01 2002-02-15 Sumitomo Electric Ind Ltd 半導体受光素子
EP1198015A3 (de) * 2000-09-13 2004-04-14 TriQuint Technology Holding Co Optoelektronische dotierte Vorrichtung zum Erhöhen der optischen Leistungsschwelle für den Bandbreiteeinsturz und Herstellungsverfahren
US6627501B2 (en) * 2001-05-25 2003-09-30 Macronix International Co., Ltd. Method of forming tunnel oxide layer
US6518080B2 (en) * 2001-06-19 2003-02-11 Sensors Unlimited, Inc. Method of fabricating low dark current photodiode arrays
JP2003264309A (ja) * 2002-03-08 2003-09-19 Toshiba Corp 光半導体装置および光半導体装置の製造方法
JP2006080448A (ja) * 2004-09-13 2006-03-23 Sumitomo Electric Ind Ltd エピタキシャルウェハおよび素子
DE602005026049D1 (de) * 2004-12-07 2011-03-03 Picometrix Llc Fotoleitfähiges bauelement
JP4956944B2 (ja) * 2005-09-12 2012-06-20 三菱電機株式会社 アバランシェフォトダイオード
JP5015494B2 (ja) * 2006-05-22 2012-08-29 住友電工デバイス・イノベーション株式会社 半導体受光素子
US20110041898A1 (en) * 2009-08-19 2011-02-24 Emcore Solar Power, Inc. Back Metal Layers in Inverted Metamorphic Multijunction Solar Cells
US20100093127A1 (en) * 2006-12-27 2010-04-15 Emcore Solar Power, Inc. Inverted Metamorphic Multijunction Solar Cell Mounted on Metallized Flexible Film
CN103426966A (zh) * 2009-09-07 2013-12-04 住友电气工业株式会社 受光元件
US8598673B2 (en) * 2010-08-23 2013-12-03 Discovery Semiconductors, Inc. Low-noise large-area photoreceivers with low capacitance photodiodes

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2435816A1 (fr) * 1978-09-08 1980-04-04 Radiotechnique Compelec Procede de realisation, par epitaxie, d'un dispositif semi-conducteur a structure multicouches et application de ce procede
JPS5643781A (en) * 1979-09-17 1981-04-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photodetecting element
DE3172668D1 (en) * 1980-07-08 1985-11-21 Fujitsu Ltd Avalanche photodiodes
JPS5730380A (en) * 1980-07-29 1982-02-18 Fujitsu Ltd Optical semiconductor device
JPS5793585A (en) * 1980-12-02 1982-06-10 Fujitsu Ltd Semiconductor photoreceiving element
JPS57112084A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Avalanche photodiode
JPS582294A (ja) * 1981-06-29 1983-01-07 Fujitsu Ltd 気相成長方法
JPS58196057A (ja) * 1982-05-11 1983-11-15 Fujitsu Ltd 半導体装置
US4477964A (en) * 1982-07-29 1984-10-23 At&T Bell Laboratories Method of making p-i-n photodiodes
JPS5994474A (ja) * 1982-11-19 1984-05-31 Nec Corp ヘテロ接合光検出器
JPS59136980A (ja) * 1983-01-25 1984-08-06 Nec Corp 半導体受光素子
US4502898A (en) * 1983-12-21 1985-03-05 At&T Bell Laboratories Diffusion procedure for semiconductor compound
US4651187A (en) * 1984-03-22 1987-03-17 Nec Corporation Avalanche photodiode
US4608586A (en) * 1984-05-11 1986-08-26 At&T Bell Laboratories Back-illuminated photodiode with a wide bandgap cap layer
US4700209A (en) * 1985-10-30 1987-10-13 Rca Inc. Avalanche photodiode and a method of making same

Also Published As

Publication number Publication date
JPS61172381A (ja) 1986-08-04
KR860005215A (ko) 1986-07-18
US4906583A (en) 1990-03-06
EP0186460B1 (de) 1991-05-29
KR890004963B1 (ko) 1989-12-02
EP0186460A2 (de) 1986-07-02
EP0186460A3 (en) 1986-12-10

Similar Documents

Publication Publication Date Title
DE3583010D1 (de) Halbleiterphotodetektor.
DE3481957D1 (de) Halbleiteranordnung.
DE3583302D1 (de) Halbleiteranordnung.
DE3684557D1 (de) Waferintegrierte halbleiteranordnung.
DE3751548T2 (de) Halbleiterlaser.
DE3683316D1 (de) Halbleiteranordnung.
DE3575498D1 (de) Halbleiter-fotodetektorvorrichtung.
DE3587973T2 (de) Fotodetektor.
DE3679108D1 (de) Halbleiteranordnungen.
DE3575501D1 (de) Halbleiterlaser.
DE3582653D1 (de) Halbleiteranordnung.
DE3667879D1 (de) Halbleiteranordnung.
DE3579991D1 (de) Halbleiterlaser.
DE3586934T2 (de) Halbleiterlaser.
DE3778510D1 (de) Halbleiterlaser.
DE3581557D1 (de) Halbleiterlaser.
DE3579826D1 (de) Halbleiterlaser.
DE3575243D1 (de) Halbleiterlaser.
DE3582031D1 (de) Photodetektor.
DE3787137D1 (de) Halbleiteranordnung.
DE3587702T2 (de) Halbleiterlaser.
DE3581025D1 (de) Halbleiterlaser-vielfachanordnung.
DE3583202D1 (de) Halbleiterlaser.
DE3686944D1 (de) Halbleiteranordnung.
DE3683037D1 (de) Halbleiteranordnung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee