DE602005026049D1 - Fotoleitfähiges bauelement - Google Patents
Fotoleitfähiges bauelementInfo
- Publication number
- DE602005026049D1 DE602005026049D1 DE602005026049T DE602005026049T DE602005026049D1 DE 602005026049 D1 DE602005026049 D1 DE 602005026049D1 DE 602005026049 T DE602005026049 T DE 602005026049T DE 602005026049 T DE602005026049 T DE 602005026049T DE 602005026049 D1 DE602005026049 D1 DE 602005026049D1
- Authority
- DE
- Germany
- Prior art keywords
- leadable
- photo
- building element
- epitaxial layer
- inxga1
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
- Eye Examination Apparatus (AREA)
- Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
- Photoreceptors In Electrophotography (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US63386204P | 2004-12-07 | 2004-12-07 | |
PCT/US2005/044620 WO2006063233A2 (en) | 2004-12-07 | 2005-12-07 | Photoconductive device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005026049D1 true DE602005026049D1 (de) | 2011-03-03 |
Family
ID=36218459
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005026049T Active DE602005026049D1 (de) | 2004-12-07 | 2005-12-07 | Fotoleitfähiges bauelement |
Country Status (11)
Country | Link |
---|---|
US (1) | US9136419B2 (de) |
EP (1) | EP1820219B1 (de) |
JP (1) | JP4980238B2 (de) |
KR (1) | KR101321280B1 (de) |
CN (1) | CN101313412B (de) |
AT (1) | ATE496398T1 (de) |
CA (1) | CA2586112C (de) |
DE (1) | DE602005026049D1 (de) |
ES (1) | ES2357616T3 (de) |
HK (1) | HK1106330A1 (de) |
WO (1) | WO2006063233A2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007012475B4 (de) | 2007-03-15 | 2009-02-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Schneller Photoleiter und Verfahren zur Herstellung und Antenne mit Photoleiter |
KR100964973B1 (ko) * | 2007-11-30 | 2010-06-21 | 한국전자통신연구원 | 고출력의 테라헤르츠파 발생 소자 및 그 제조 방법 |
WO2010129804A1 (en) * | 2009-05-07 | 2010-11-11 | Lawrence Livermore National Security, Llc | Photoconductive switch package |
JP2012212870A (ja) * | 2011-03-18 | 2012-11-01 | Canon Inc | 光伝導素子 |
CN103022220B (zh) * | 2011-09-21 | 2015-06-17 | 中国科学院上海硅酸盐研究所 | 高耐压、低导通电阻的光电导开关及其制造方法 |
KR101700779B1 (ko) * | 2012-09-21 | 2017-01-31 | 한국전자통신연구원 | 포토믹서 및 그의 제조방법 |
JP2015148541A (ja) * | 2014-02-07 | 2015-08-20 | セイコーエプソン株式会社 | 光伝導アンテナ、カメラ、イメージング装置、および計測装置 |
KR101681180B1 (ko) | 2015-03-16 | 2016-11-30 | 고려대학교 산학협력단 | 재구성 가능한 광도전칩 |
JP2017028191A (ja) * | 2015-07-27 | 2017-02-02 | 浜松ホトニクス株式会社 | 光伝導アンテナ素子 |
CN105845770B (zh) * | 2016-04-07 | 2017-03-15 | 中国工程物理研究院流体物理研究所 | 一种带有高反膜和增透膜的低导通电阻GaAs光导开关 |
CN105826422B (zh) * | 2016-05-12 | 2017-04-12 | 中国工程物理研究院流体物理研究所 | 一种量子阱结构的大功率半绝缘AlGaAs/GaAs光导开关及制作方法 |
CN108735832B (zh) * | 2018-05-28 | 2020-09-25 | 西安理工大学 | 一种横向绝缘栅型光电导开关及其制作方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4608586A (en) * | 1984-05-11 | 1986-08-26 | At&T Bell Laboratories | Back-illuminated photodiode with a wide bandgap cap layer |
JPS61172381A (ja) * | 1984-12-22 | 1986-08-04 | Fujitsu Ltd | InP系化合物半導体装置 |
US6188081B1 (en) * | 1996-12-11 | 2001-02-13 | Wen-Chau Liu | Fabrication process and structure of the metal-insulator-semiconductor-insulator-metal (MISIM) multiple-differential-resistance (MNDR) device |
JP2000312022A (ja) * | 1999-04-27 | 2000-11-07 | Sharp Corp | 受光素子及びその駆動方法 |
-
2005
- 2005-12-07 JP JP2007545665A patent/JP4980238B2/ja not_active Expired - Fee Related
- 2005-12-07 DE DE602005026049T patent/DE602005026049D1/de active Active
- 2005-12-07 ES ES05853521T patent/ES2357616T3/es active Active
- 2005-12-07 KR KR1020077012804A patent/KR101321280B1/ko active IP Right Grant
- 2005-12-07 EP EP05853521A patent/EP1820219B1/de not_active Not-in-force
- 2005-12-07 AT AT05853521T patent/ATE496398T1/de active
- 2005-12-07 WO PCT/US2005/044620 patent/WO2006063233A2/en active Application Filing
- 2005-12-07 CA CA2586112A patent/CA2586112C/en active Active
- 2005-12-07 US US11/718,959 patent/US9136419B2/en active Active
- 2005-12-07 CN CN2005800418774A patent/CN101313412B/zh not_active Expired - Fee Related
-
2008
- 2008-01-10 HK HK08100313.2A patent/HK1106330A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20080093625A1 (en) | 2008-04-24 |
CA2586112C (en) | 2014-07-22 |
CN101313412A (zh) | 2008-11-26 |
EP1820219B1 (de) | 2011-01-19 |
ATE496398T1 (de) | 2011-02-15 |
CA2586112A1 (en) | 2006-06-15 |
WO2006063233A2 (en) | 2006-06-15 |
EP1820219A2 (de) | 2007-08-22 |
WO2006063233A9 (en) | 2006-09-14 |
US9136419B2 (en) | 2015-09-15 |
JP2008523629A (ja) | 2008-07-03 |
JP4980238B2 (ja) | 2012-07-18 |
HK1106330A1 (en) | 2008-03-07 |
ES2357616T3 (es) | 2011-04-28 |
KR101321280B1 (ko) | 2013-10-25 |
KR20070091135A (ko) | 2007-09-07 |
WO2006063233A3 (en) | 2006-08-03 |
CN101313412B (zh) | 2011-04-13 |
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