ATE496398T1 - Fotoleitfähiges bauelement - Google Patents

Fotoleitfähiges bauelement

Info

Publication number
ATE496398T1
ATE496398T1 AT05853521T AT05853521T ATE496398T1 AT E496398 T1 ATE496398 T1 AT E496398T1 AT 05853521 T AT05853521 T AT 05853521T AT 05853521 T AT05853521 T AT 05853521T AT E496398 T1 ATE496398 T1 AT E496398T1
Authority
AT
Austria
Prior art keywords
epitaxial layer
photoconductive component
inxga1
xas
substrate
Prior art date
Application number
AT05853521T
Other languages
English (en)
Inventor
Robert Sacks
Mathew Jazwiecki
Steven Williamson
Original Assignee
Picometrix Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Picometrix Llc filed Critical Picometrix Llc
Application granted granted Critical
Publication of ATE496398T1 publication Critical patent/ATE496398T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09Devices sensitive to infrared, visible or ultraviolet radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/737Hetero-junction transistors
    • H01L29/7371Vertical transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264Inorganic materials
    • H01L31/0304Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Eye Examination Apparatus (AREA)
AT05853521T 2004-12-07 2005-12-07 Fotoleitfähiges bauelement ATE496398T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US63386204P 2004-12-07 2004-12-07
PCT/US2005/044620 WO2006063233A2 (en) 2004-12-07 2005-12-07 Photoconductive device

Publications (1)

Publication Number Publication Date
ATE496398T1 true ATE496398T1 (de) 2011-02-15

Family

ID=36218459

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05853521T ATE496398T1 (de) 2004-12-07 2005-12-07 Fotoleitfähiges bauelement

Country Status (11)

Country Link
US (1) US9136419B2 (de)
EP (1) EP1820219B1 (de)
JP (1) JP4980238B2 (de)
KR (1) KR101321280B1 (de)
CN (1) CN101313412B (de)
AT (1) ATE496398T1 (de)
CA (1) CA2586112C (de)
DE (1) DE602005026049D1 (de)
ES (1) ES2357616T3 (de)
HK (1) HK1106330A1 (de)
WO (1) WO2006063233A2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007012475B4 (de) * 2007-03-15 2009-02-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Schneller Photoleiter und Verfahren zur Herstellung und Antenne mit Photoleiter
KR100964973B1 (ko) * 2007-11-30 2010-06-21 한국전자통신연구원 고출력의 테라헤르츠파 발생 소자 및 그 제조 방법
WO2010129804A1 (en) * 2009-05-07 2010-11-11 Lawrence Livermore National Security, Llc Photoconductive switch package
JP2012212870A (ja) * 2011-03-18 2012-11-01 Canon Inc 光伝導素子
CN103022220B (zh) * 2011-09-21 2015-06-17 中国科学院上海硅酸盐研究所 高耐压、低导通电阻的光电导开关及其制造方法
KR101700779B1 (ko) * 2012-09-21 2017-01-31 한국전자통신연구원 포토믹서 및 그의 제조방법
JP2015148541A (ja) * 2014-02-07 2015-08-20 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置
KR101681180B1 (ko) 2015-03-16 2016-11-30 고려대학교 산학협력단 재구성 가능한 광도전칩
JP2017028191A (ja) * 2015-07-27 2017-02-02 浜松ホトニクス株式会社 光伝導アンテナ素子
CN105845770B (zh) * 2016-04-07 2017-03-15 中国工程物理研究院流体物理研究所 一种带有高反膜和增透膜的低导通电阻GaAs光导开关
CN105826422B (zh) * 2016-05-12 2017-04-12 中国工程物理研究院流体物理研究所 一种量子阱结构的大功率半绝缘AlGaAs/GaAs光导开关及制作方法
CN108735832B (zh) * 2018-05-28 2020-09-25 西安理工大学 一种横向绝缘栅型光电导开关及其制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4608586A (en) * 1984-05-11 1986-08-26 At&T Bell Laboratories Back-illuminated photodiode with a wide bandgap cap layer
JPS61172381A (ja) * 1984-12-22 1986-08-04 Fujitsu Ltd InP系化合物半導体装置
US6188081B1 (en) * 1996-12-11 2001-02-13 Wen-Chau Liu Fabrication process and structure of the metal-insulator-semiconductor-insulator-metal (MISIM) multiple-differential-resistance (MNDR) device
JP2000312022A (ja) * 1999-04-27 2000-11-07 Sharp Corp 受光素子及びその駆動方法

Also Published As

Publication number Publication date
ES2357616T3 (es) 2011-04-28
DE602005026049D1 (de) 2011-03-03
JP4980238B2 (ja) 2012-07-18
US20080093625A1 (en) 2008-04-24
WO2006063233A2 (en) 2006-06-15
KR20070091135A (ko) 2007-09-07
WO2006063233A9 (en) 2006-09-14
EP1820219A2 (de) 2007-08-22
CN101313412A (zh) 2008-11-26
US9136419B2 (en) 2015-09-15
EP1820219B1 (de) 2011-01-19
CN101313412B (zh) 2011-04-13
WO2006063233A3 (en) 2006-08-03
KR101321280B1 (ko) 2013-10-25
HK1106330A1 (en) 2008-03-07
CA2586112A1 (en) 2006-06-15
CA2586112C (en) 2014-07-22
JP2008523629A (ja) 2008-07-03

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