TW200833885A - Nitride semiconductor device and nitride semiconductor manufacturing method - Google Patents
Nitride semiconductor device and nitride semiconductor manufacturing methodInfo
- Publication number
- TW200833885A TW200833885A TW96148118A TW96148118A TW200833885A TW 200833885 A TW200833885 A TW 200833885A TW 96148118 A TW96148118 A TW 96148118A TW 96148118 A TW96148118 A TW 96148118A TW 200833885 A TW200833885 A TW 200833885A
- Authority
- TW
- Taiwan
- Prior art keywords
- nitride semiconductor
- iii
- semiconductor layer
- ratio
- iii nitride
- Prior art date
Links
- 150000004767 nitrides Chemical class 0.000 title abstract 9
- 239000004065 semiconductor Substances 0.000 title abstract 9
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A nitride semiconductor device includes a first III nitride semiconductor layer and a second III nitride semiconductor layer. The first III nitride semiconductor layer has a V/III ratio, I.e., a ratio of the nitrogen material (molar ratio) to the III element material (more specifically, gallium material), at a prescribed ratio of first V/III, and has a growing main plane other than a c-plane. The second III nitride semiconductor layer is arranged on the first III nitride semiconductor layer, has a second V/III ratio higher than the first V/III ratio, and has the growing main plane same as that of the first III nitride semiconductor layer.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006337249A JP2008153285A (en) | 2006-12-14 | 2006-12-14 | Nitride semiconductor apparatus and nitride semiconductor manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200833885A true TW200833885A (en) | 2008-08-16 |
Family
ID=39511622
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW96148118A TW200833885A (en) | 2006-12-14 | 2007-12-14 | Nitride semiconductor device and nitride semiconductor manufacturing method |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2008153285A (en) |
TW (1) | TW200833885A (en) |
WO (1) | WO2008072601A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102754226A (en) * | 2010-04-28 | 2012-10-24 | 松下电器产业株式会社 | Nitride-type semiconductor element and process for production thereof |
TWI401729B (en) * | 2008-10-16 | 2013-07-11 | Advanced Optoelectronic Tech | Method for interdicting dislocation of semiconductor with dislocation defects |
US8580590B2 (en) | 2008-10-13 | 2013-11-12 | Advanced Optoelectronic Technology, Inc. | Method for manufacturing polychromatic light emitting diode device having wavelength conversion layer made of semiconductor |
CN104205297A (en) * | 2012-03-21 | 2014-12-10 | 首尔伟傲世有限公司 | Method of fabricating non-polar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and method of fabricating the same |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4572963B2 (en) * | 2008-07-09 | 2010-11-04 | 住友電気工業株式会社 | Group III nitride semiconductor light emitting device and epitaxial wafer |
EP2226853B1 (en) | 2008-11-06 | 2014-02-26 | Panasonic Corporation | Nitride semiconductor element and method for manufacturing the same |
CN101981713B (en) * | 2009-03-11 | 2013-11-20 | 松下电器产业株式会社 | Nitride semiconductor element and method for manufacturing same |
WO2010113238A1 (en) * | 2009-04-03 | 2010-10-07 | パナソニック株式会社 | Nitride semiconductor element and method for manufacturing same |
WO2010113237A1 (en) * | 2009-04-03 | 2010-10-07 | パナソニック株式会社 | Nitride semiconductor element and method for manufacturing same |
WO2010116703A1 (en) * | 2009-04-06 | 2010-10-14 | パナソニック株式会社 | Nitride semiconductor element and method for production thereof |
KR101171722B1 (en) * | 2009-12-25 | 2012-08-06 | 파나소닉 주식회사 | Nitride semiconductor element and method for manufacturing same |
JP4792136B2 (en) * | 2010-01-18 | 2011-10-12 | パナソニック株式会社 | Nitride-based semiconductor device and manufacturing method thereof |
KR101752407B1 (en) | 2010-02-24 | 2017-07-11 | 엘지전자 주식회사 | method for fabricating nitride semiconductor device |
WO2011125279A1 (en) * | 2010-04-01 | 2011-10-13 | パナソニック株式会社 | Nitride semiconductor element and manufacturing method therefor |
JP5776021B2 (en) | 2010-04-02 | 2015-09-09 | パナソニックIpマネジメント株式会社 | Nitride-based semiconductor device and light source |
JPWO2011135866A1 (en) | 2010-04-28 | 2013-07-18 | パナソニック株式会社 | Nitride-based semiconductor device and manufacturing method thereof |
JP5641505B2 (en) * | 2011-04-22 | 2014-12-17 | パナソニックIpマネジメント株式会社 | Method for manufacturing nitride-based semiconductor light-emitting device |
JP5682716B2 (en) * | 2014-01-09 | 2015-03-11 | 三菱化学株式会社 | Nitride semiconductor |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3832313B2 (en) * | 2001-11-02 | 2006-10-11 | 日亜化学工業株式会社 | Nitride semiconductor growth method and nitride semiconductor |
SG135924A1 (en) * | 2003-04-02 | 2007-10-29 | Sumitomo Electric Industries | Nitride-based semiconductor epitaxial substrate, method of manufacturing the same, and hemt substrate |
WO2005112123A2 (en) * | 2004-05-10 | 2005-11-24 | The Regents Of The University Of California | Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition |
JP4781028B2 (en) * | 2004-07-21 | 2011-09-28 | 昭和電工株式会社 | Group III nitride semiconductor laminate and method for manufacturing group III nitride semiconductor light emitting device |
JP4140606B2 (en) * | 2005-01-11 | 2008-08-27 | ソニー株式会社 | GaN-based semiconductor light emitting device manufacturing method |
JP4915128B2 (en) * | 2005-04-11 | 2012-04-11 | 日亜化学工業株式会社 | Nitride semiconductor wafer and method for manufacturing the same |
-
2006
- 2006-12-14 JP JP2006337249A patent/JP2008153285A/en active Pending
-
2007
- 2007-12-10 WO PCT/JP2007/073792 patent/WO2008072601A1/en active Application Filing
- 2007-12-14 TW TW96148118A patent/TW200833885A/en unknown
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8580590B2 (en) | 2008-10-13 | 2013-11-12 | Advanced Optoelectronic Technology, Inc. | Method for manufacturing polychromatic light emitting diode device having wavelength conversion layer made of semiconductor |
TWI416757B (en) * | 2008-10-13 | 2013-11-21 | Advanced Optoelectronic Tech | Polychromatic wavelengths led and manufacturing method thereof |
TWI401729B (en) * | 2008-10-16 | 2013-07-11 | Advanced Optoelectronic Tech | Method for interdicting dislocation of semiconductor with dislocation defects |
CN102754226A (en) * | 2010-04-28 | 2012-10-24 | 松下电器产业株式会社 | Nitride-type semiconductor element and process for production thereof |
CN102754226B (en) * | 2010-04-28 | 2015-07-15 | 松下电器产业株式会社 | Nitride-type semiconductor element and process for production thereof |
CN104205297A (en) * | 2012-03-21 | 2014-12-10 | 首尔伟傲世有限公司 | Method of fabricating non-polar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and method of fabricating the same |
US9966497B2 (en) | 2012-03-21 | 2018-05-08 | Seoul Viosys Co., Ltd. | Method of fabricating nonpolar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and method of fabricating the same |
CN104205297B (en) * | 2012-03-21 | 2018-06-15 | 首尔伟傲世有限公司 | Method, non-polar semiconductor device and its manufacturing method of the nonpolar gallium nitride-based semiconductor of manufacture |
Also Published As
Publication number | Publication date |
---|---|
JP2008153285A (en) | 2008-07-03 |
WO2008072601A1 (en) | 2008-06-19 |
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