ATE525752T1 - Spannungsausgeglichener nitrid- heteroübergangstransistor und methoden zur herstellung desselben - Google Patents

Spannungsausgeglichener nitrid- heteroübergangstransistor und methoden zur herstellung desselben

Info

Publication number
ATE525752T1
ATE525752T1 AT02789772T AT02789772T ATE525752T1 AT E525752 T1 ATE525752 T1 AT E525752T1 AT 02789772 T AT02789772 T AT 02789772T AT 02789772 T AT02789772 T AT 02789772T AT E525752 T1 ATE525752 T1 AT E525752T1
Authority
AT
Austria
Prior art keywords
layer
group iii
strain
nitride based
nitride
Prior art date
Application number
AT02789772T
Other languages
English (en)
Inventor
Adam Saxler
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE525752T1 publication Critical patent/ATE525752T1/de

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
AT02789772T 2001-12-03 2002-11-20 Spannungsausgeglichener nitrid- heteroübergangstransistor und methoden zur herstellung desselben ATE525752T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US33768701P 2001-12-03 2001-12-03
US10/199,786 US7030428B2 (en) 2001-12-03 2002-07-19 Strain balanced nitride heterojunction transistors
PCT/US2002/037244 WO2003049193A1 (en) 2001-12-03 2002-11-20 Strain balanced nitride heterojunction transistors and methods of fabricating strain balanced nitride heterojunction transistors

Publications (1)

Publication Number Publication Date
ATE525752T1 true ATE525752T1 (de) 2011-10-15

Family

ID=26895154

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02789772T ATE525752T1 (de) 2001-12-03 2002-11-20 Spannungsausgeglichener nitrid- heteroübergangstransistor und methoden zur herstellung desselben

Country Status (10)

Country Link
US (2) US7030428B2 (de)
EP (1) EP1456889B1 (de)
JP (2) JP2005512327A (de)
KR (1) KR20050058259A (de)
CN (1) CN1599960B (de)
AT (1) ATE525752T1 (de)
AU (1) AU2002352817A1 (de)
CA (1) CA2468520A1 (de)
TW (1) TWI255551B (de)
WO (1) WO2003049193A1 (de)

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CN1599960B (zh) 2012-05-16
KR20050058259A (ko) 2005-06-16
TW200301016A (en) 2003-06-16
CA2468520A1 (en) 2003-06-12
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CN1599960A (zh) 2005-03-23
US20030102482A1 (en) 2003-06-05
AU2002352817A1 (en) 2003-06-17
US20060121682A1 (en) 2006-06-08
WO2003049193A1 (en) 2003-06-12
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TWI255551B (en) 2006-05-21
US8153515B2 (en) 2012-04-10

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