JP4705481B2 - 窒化物半導体装置 - Google Patents
窒化物半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 194
- 150000004767 nitrides Chemical class 0.000 title claims description 91
- 239000000203 mixture Substances 0.000 claims description 24
- 238000005036 potential barrier Methods 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 32
- 229910002601 GaN Inorganic materials 0.000 description 31
- 239000000758 substrate Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 17
- 229910002704 AlGaN Inorganic materials 0.000 description 11
- 238000002161 passivation Methods 0.000 description 10
- 230000010287 polarization Effects 0.000 description 10
- 230000005669 field effect Effects 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 230000005533 two-dimensional electron gas Effects 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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Description
M.Hikita et al., Technical Digest of 2004 International Electron Devices Meeting (2004) p.803 O. Ambacher et al., J.Appl.Phys. Vol.85 (1999) p.3222 L. Zhang et al., IEEE Transactions on Electron Devices, vol.47, no.3, pp.507-511, 2000
図1は本発明の第1の実施形態に係る窒化物半導体装置の断面構造の一例を示している。
図3は本発明の第2の実施形態に係る窒化物半導体装置の断面構造の一例を示している。
図5は本発明の第3の実施形態に係る窒化物半導体装置の断面構造の一例を示している。
102 バッファ層
103 下地層
104 第1の半導体層
105 第2の半導体層
106 コントロール層
107 コンタクト層
108 ソース電極
109 ドレイン電極
110 ゲート電極
111 パッシベーション膜
301 基板
302 バッファ層
303 下地層
304 第1の半導体層
305 第2の半導体層
306 コントロール層
307 コンタクト層
308 ソース電極
309 ドレイン電極
310 ゲート電極
311 パッシベーション膜
312 貫通穴
501 基板
502 バッファ層
503 下地層
504 第1の半導体層
505 第2の半導体層
506 コントロール層
507 コンタクト層
508 ソース電極
509 ドレイン電極
510 ゲート電極
511 パッシベーション膜
701 基板
702 アンドープGaN層
703 アンドープAl0.25Ga0.75N層
704 ソース電極
705 ドレイン電極
706 ゲート電極
707 パッシベーション膜
901 基板
902 AlNバッファ層
903 アンドープGaN層
904 アンドープAlGaN層
905 p型コントロール層
906 p型コンタクト層
907 ゲート電極
908 ソース電極
909 ドレイン電極
910 パッシベーション膜
Claims (6)
- アンドープの第1の窒化物半導体からなる第1の半導体層と、
前記第1の半導体層の主面上に形成され、バンドギャップが前記第1の窒化物半導体よりも大きいアンドープの第2の窒化物半導体からなる第2の半導体層と、
前記第2の半導体層上に選択的に形成され、p型の導電性を有する第3の窒化物半導体からなるコントロール層と、
前記第2の半導体層の上で且つ前記コントロール層の両側方の領域にそれぞれ形成されたソース電極及びドレイン電極と、
前記コントロール層の上側に形成されたゲート電極と、
前記第1の半導体層の前記主面と反対側の面上に形成され、前記第1の窒化物半導体に対して価電子帯にポテンシャル障壁を有し、組成にアルミニウムを含む第4の窒化物半導体からなる第4の半導体層とを備え、
前記コントロール層に電圧を印加しない状態ではノーマリオフであり、
前記コントロール層は、前記ゲート電極に順方向バイアスが印加された場合に、前記第1の半導体層に生じるチャネル領域にホールが注入され、前記ソース電極と前記ドレイン電極との間の電気伝導性を制御することを特徴とする窒化物半導体装置。 - 前記第1の半導体層の厚さは、前記第4の半導体層の厚さよりも薄いことを特徴とする請求項1に記載の窒化物半導体装置。
- 前記第4の半導体層におけるアルミニウムの組成比の値は、0.03以上且つ0.1以下に設定されていることを特徴とする請求項1に記載の窒化物半導体装置。
- 前記第1の窒化物半導体は、組成にインジウムを含むことを特徴とする請求項1〜3のうちいずれか1項に記載の窒化物半導体装置。
- 前記第1の半導体層は、厚さが0nmより大きく且つ30nm以下であることを特徴とする請求項1〜4のうちいずれか1項に記載の窒化物半導体装置。
- 前記第1の窒化物半導体は、組成にインジウムを含み、
前記第1の半導体層は、厚さが0nmより大きく且つ30nm以下であることを特徴とする請求項1〜3のうちいずれか1項に記載の窒化物半導体装置。
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JP2006016622A JP4705481B2 (ja) | 2006-01-25 | 2006-01-25 | 窒化物半導体装置 |
CNA2006101659295A CN101009324A (zh) | 2006-01-25 | 2006-12-11 | 氮化物半导体装置 |
CN2011101620703A CN102244097A (zh) | 2006-01-25 | 2006-12-11 | 氮化物半导体装置 |
US11/647,218 US7825434B2 (en) | 2006-01-25 | 2006-12-29 | Nitride semiconductor device |
US12/879,565 US20100327320A1 (en) | 2006-01-25 | 2010-09-10 | Nitride semiconductor device |
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JP2006016622A JP4705481B2 (ja) | 2006-01-25 | 2006-01-25 | 窒化物半導体装置 |
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JP4705481B2 true JP4705481B2 (ja) | 2011-06-22 |
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US7531854B2 (en) * | 2007-05-04 | 2009-05-12 | Dsm Solutions, Inc. | Semiconductor device having strain-inducing substrate and fabrication methods thereof |
US7772056B2 (en) * | 2007-06-18 | 2010-08-10 | University Of Utah Research Foundation | Transistors for replacing metal-oxide semiconductor field-effect transistors in nanoelectronics |
JP4478175B2 (ja) * | 2007-06-26 | 2010-06-09 | 株式会社東芝 | 半導体装置 |
US7875907B2 (en) * | 2007-09-12 | 2011-01-25 | Transphorm Inc. | III-nitride bidirectional switches |
JP2009200395A (ja) * | 2008-02-25 | 2009-09-03 | Sanken Electric Co Ltd | Hfetおよびその製造方法 |
JP2009231508A (ja) * | 2008-03-21 | 2009-10-08 | Panasonic Corp | 半導体装置 |
EP2166085A1 (en) * | 2008-07-16 | 2010-03-24 | Suomen Punainen Risti Veripalvelu | Divalent modified cells |
JP5595685B2 (ja) * | 2009-07-28 | 2014-09-24 | パナソニック株式会社 | 半導体装置 |
US9378965B2 (en) * | 2009-12-10 | 2016-06-28 | Infineon Technologies Americas Corp. | Highly conductive source/drain contacts in III-nitride transistors |
JP2011233751A (ja) * | 2010-04-28 | 2011-11-17 | Panasonic Corp | 窒化物半導体トランジスタ |
KR101108746B1 (ko) * | 2010-07-07 | 2012-02-24 | 삼성전기주식회사 | 질화물계 반도체 소자 및 그 제조 방법 |
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JP2014072427A (ja) * | 2012-09-28 | 2014-04-21 | Fujitsu Ltd | 半導体装置及び半導体装置の製造方法 |
JP6161910B2 (ja) * | 2013-01-30 | 2017-07-12 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6189235B2 (ja) * | 2014-03-14 | 2017-08-30 | 株式会社東芝 | 半導体装置 |
JP6642883B2 (ja) * | 2015-10-08 | 2020-02-12 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
JPWO2018181237A1 (ja) | 2017-03-31 | 2020-02-06 | パナソニックIpマネジメント株式会社 | 半導体装置 |
CN112928161B (zh) * | 2019-12-06 | 2024-01-02 | 联华电子股份有限公司 | 高电子迁移率晶体管及其制作方法 |
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- 2006-12-11 CN CN2011101620703A patent/CN102244097A/zh active Pending
- 2006-12-11 CN CNA2006101659295A patent/CN101009324A/zh active Pending
- 2006-12-29 US US11/647,218 patent/US7825434B2/en active Active
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US20100327320A1 (en) | 2010-12-30 |
US20070170463A1 (en) | 2007-07-26 |
JP2007201093A (ja) | 2007-08-09 |
US7825434B2 (en) | 2010-11-02 |
CN102244097A (zh) | 2011-11-16 |
CN101009324A (zh) | 2007-08-01 |
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