PL368483A1 - Monocrystals of nitride containing gallium and its application - Google Patents
Monocrystals of nitride containing gallium and its applicationInfo
- Publication number
- PL368483A1 PL368483A1 PL04368483A PL36848304A PL368483A1 PL 368483 A1 PL368483 A1 PL 368483A1 PL 04368483 A PL04368483 A PL 04368483A PL 36848304 A PL36848304 A PL 36848304A PL 368483 A1 PL368483 A1 PL 368483A1
- Authority
- PL
- Poland
- Prior art keywords
- monocrystals
- application
- nitride containing
- containing gallium
- gallium
- Prior art date
Links
Priority Applications (17)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL04368483A PL368483A1 (en) | 2004-06-11 | 2004-06-11 | Monocrystals of nitride containing gallium and its application |
PL05372746A PL372746A1 (en) | 2004-06-11 | 2005-02-11 | Hemt type transistor built of layers of nitrides of group xiii chemical elements and method for its manufacture |
CN2005800188221A CN1973063B (en) | 2004-06-11 | 2005-06-10 | Monocrystals of nitride containing gallium and its application |
EP05748691A EP1759408A1 (en) | 2004-06-11 | 2005-06-10 | High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof. |
PCT/JP2005/011093 WO2005121415A1 (en) | 2004-06-11 | 2005-06-10 | Bulk mono-crystalline gallium-containing nitride and its application |
PL05751252T PL1769105T3 (en) | 2004-06-11 | 2005-06-10 | Bulk mono-crystalline gallium nitride and method for its preparation |
JP2007527098A JP4579294B2 (en) | 2004-06-11 | 2005-06-10 | High electron mobility transistor (HEMT) manufactured from group 13 element nitride layer and method of manufacturing the same |
PCT/PL2005/000036 WO2005122232A1 (en) | 2004-06-11 | 2005-06-10 | High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof. |
KR1020067027359A KR100848379B1 (en) | 2004-06-11 | 2005-06-10 | High electron mobility transistorhemt made of layers of group ?? element nitrides and manufacturing method thereof |
EP05751252.7A EP1769105B1 (en) | 2004-06-11 | 2005-06-10 | Bulk mono-crystalline gallium nitride and method for its preparation |
JP2006551658A JP5014804B2 (en) | 2004-06-11 | 2005-06-10 | Bulk single crystal gallium-containing nitride and its use |
US11/629,125 US8754449B2 (en) | 2004-06-11 | 2005-06-10 | High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof |
KR1020067027510A KR100848380B1 (en) | 2004-06-11 | 2005-06-10 | Bulk mono-crystalline gallium-containing nitride and its application |
CNB200580019026XA CN100485888C (en) | 2004-06-11 | 2005-06-10 | High electron mobility transistor (HEMT) made of group XIII element nitride layers and manufacturing method thereof |
US11/629,109 US8398767B2 (en) | 2004-06-11 | 2005-06-10 | Bulk mono-crystalline gallium-containing nitride and its application |
JP2009001451A JP2009141377A (en) | 2004-06-11 | 2009-01-07 | Substrate for high electron mobility transistor (hemt) |
JP2009199105A JP5309395B2 (en) | 2004-06-11 | 2009-08-29 | High electron mobility transistor (HEMT) substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL04368483A PL368483A1 (en) | 2004-06-11 | 2004-06-11 | Monocrystals of nitride containing gallium and its application |
Publications (1)
Publication Number | Publication Date |
---|---|
PL368483A1 true PL368483A1 (en) | 2005-12-12 |
Family
ID=37495759
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL04368483A PL368483A1 (en) | 2004-06-11 | 2004-06-11 | Monocrystals of nitride containing gallium and its application |
Country Status (2)
Country | Link |
---|---|
CN (2) | CN100485888C (en) |
PL (1) | PL368483A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2267197A1 (en) | 2009-06-25 | 2010-12-29 | AMMONO Sp.z o.o. | Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates |
US8975639B2 (en) | 2010-04-06 | 2015-03-10 | Instytut Wysokich Ciśnień Polskiej Akademi Nauk | Substrate for epitaxial growth |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6106932B2 (en) * | 2012-03-19 | 2017-04-05 | 株式会社リコー | Group 13 nitride crystal and group 13 nitride crystal substrate |
WO2014031152A1 (en) * | 2012-08-24 | 2014-02-27 | Sixpoint Materials, Inc. | A bismuth-doped semi-insulating group iii nitride wafer and its production method |
WO2016118862A1 (en) * | 2015-01-22 | 2016-07-28 | Sixpoint Materials, Inc. | Seed selection and growth methods for reduced-crack group iii nitride bulk crystals |
DE112016005022T5 (en) * | 2015-11-02 | 2018-08-02 | Ngk Insulators, Ltd. | EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENTS, SEMICONDUCTOR ELEMENTS AND PRODUCTION PROCESS FOR EPITAXIAL SUBSTRATES FOR SEMICONDUCTOR ELEMENTS |
-
2004
- 2004-06-11 PL PL04368483A patent/PL368483A1/en not_active Application Discontinuation
-
2005
- 2005-06-10 CN CNB200580019026XA patent/CN100485888C/en not_active Expired - Fee Related
- 2005-06-10 CN CN2005800188221A patent/CN1973063B/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2267197A1 (en) | 2009-06-25 | 2010-12-29 | AMMONO Sp.z o.o. | Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates |
US8975639B2 (en) | 2010-04-06 | 2015-03-10 | Instytut Wysokich Ciśnień Polskiej Akademi Nauk | Substrate for epitaxial growth |
Also Published As
Publication number | Publication date |
---|---|
CN100485888C (en) | 2009-05-06 |
CN1965399A (en) | 2007-05-16 |
CN1973063A (en) | 2007-05-30 |
CN1973063B (en) | 2010-09-15 |
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Legal Events
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REFS | Decisions on refusal to grant patents (taken after the publication of the particulars of the applications) |