PL368483A1 - Monocrystals of nitride containing gallium and its application - Google Patents

Monocrystals of nitride containing gallium and its application

Info

Publication number
PL368483A1
PL368483A1 PL04368483A PL36848304A PL368483A1 PL 368483 A1 PL368483 A1 PL 368483A1 PL 04368483 A PL04368483 A PL 04368483A PL 36848304 A PL36848304 A PL 36848304A PL 368483 A1 PL368483 A1 PL 368483A1
Authority
PL
Poland
Prior art keywords
monocrystals
application
nitride containing
containing gallium
gallium
Prior art date
Application number
PL04368483A
Other languages
Polish (pl)
Inventor
Robert Dwiliński
Roman Doradziński
Jerzy Garczyński
Leszek Sierzputowski
Yasuo Kanbara
Robert Kucharski
Original Assignee
Ammono Sp.Z O.O.
Nichia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ammono Sp.Z O.O., Nichia Corporation filed Critical Ammono Sp.Z O.O.
Priority to PL04368483A priority Critical patent/PL368483A1/en
Priority to PL05372746A priority patent/PL372746A1/en
Priority to PCT/PL2005/000036 priority patent/WO2005122232A1/en
Priority to EP05751252.7A priority patent/EP1769105B1/en
Priority to PCT/JP2005/011093 priority patent/WO2005121415A1/en
Priority to PL05751252T priority patent/PL1769105T3/en
Priority to JP2007527098A priority patent/JP4579294B2/en
Priority to CN2005800188221A priority patent/CN1973063B/en
Priority to KR1020067027359A priority patent/KR100848379B1/en
Priority to EP05748691A priority patent/EP1759408A1/en
Priority to JP2006551658A priority patent/JP5014804B2/en
Priority to US11/629,125 priority patent/US8754449B2/en
Priority to KR1020067027510A priority patent/KR100848380B1/en
Priority to CNB200580019026XA priority patent/CN100485888C/en
Priority to US11/629,109 priority patent/US8398767B2/en
Publication of PL368483A1 publication Critical patent/PL368483A1/en
Priority to JP2009001451A priority patent/JP2009141377A/en
Priority to JP2009199105A priority patent/JP5309395B2/en

Links

PL04368483A 2004-06-11 2004-06-11 Monocrystals of nitride containing gallium and its application PL368483A1 (en)

Priority Applications (17)

Application Number Priority Date Filing Date Title
PL04368483A PL368483A1 (en) 2004-06-11 2004-06-11 Monocrystals of nitride containing gallium and its application
PL05372746A PL372746A1 (en) 2004-06-11 2005-02-11 Hemt type transistor built of layers of nitrides of group xiii chemical elements and method for its manufacture
CN2005800188221A CN1973063B (en) 2004-06-11 2005-06-10 Monocrystals of nitride containing gallium and its application
EP05748691A EP1759408A1 (en) 2004-06-11 2005-06-10 High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof.
PCT/JP2005/011093 WO2005121415A1 (en) 2004-06-11 2005-06-10 Bulk mono-crystalline gallium-containing nitride and its application
PL05751252T PL1769105T3 (en) 2004-06-11 2005-06-10 Bulk mono-crystalline gallium nitride and method for its preparation
JP2007527098A JP4579294B2 (en) 2004-06-11 2005-06-10 High electron mobility transistor (HEMT) manufactured from group 13 element nitride layer and method of manufacturing the same
PCT/PL2005/000036 WO2005122232A1 (en) 2004-06-11 2005-06-10 High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof.
KR1020067027359A KR100848379B1 (en) 2004-06-11 2005-06-10 High electron mobility transistorhemt made of layers of group ?? element nitrides and manufacturing method thereof
EP05751252.7A EP1769105B1 (en) 2004-06-11 2005-06-10 Bulk mono-crystalline gallium nitride and method for its preparation
JP2006551658A JP5014804B2 (en) 2004-06-11 2005-06-10 Bulk single crystal gallium-containing nitride and its use
US11/629,125 US8754449B2 (en) 2004-06-11 2005-06-10 High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof
KR1020067027510A KR100848380B1 (en) 2004-06-11 2005-06-10 Bulk mono-crystalline gallium-containing nitride and its application
CNB200580019026XA CN100485888C (en) 2004-06-11 2005-06-10 High electron mobility transistor (HEMT) made of group XIII element nitride layers and manufacturing method thereof
US11/629,109 US8398767B2 (en) 2004-06-11 2005-06-10 Bulk mono-crystalline gallium-containing nitride and its application
JP2009001451A JP2009141377A (en) 2004-06-11 2009-01-07 Substrate for high electron mobility transistor (hemt)
JP2009199105A JP5309395B2 (en) 2004-06-11 2009-08-29 High electron mobility transistor (HEMT) substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL04368483A PL368483A1 (en) 2004-06-11 2004-06-11 Monocrystals of nitride containing gallium and its application

Publications (1)

Publication Number Publication Date
PL368483A1 true PL368483A1 (en) 2005-12-12

Family

ID=37495759

Family Applications (1)

Application Number Title Priority Date Filing Date
PL04368483A PL368483A1 (en) 2004-06-11 2004-06-11 Monocrystals of nitride containing gallium and its application

Country Status (2)

Country Link
CN (2) CN100485888C (en)
PL (1) PL368483A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2267197A1 (en) 2009-06-25 2010-12-29 AMMONO Sp.z o.o. Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates
US8975639B2 (en) 2010-04-06 2015-03-10 Instytut Wysokich Ciśnień Polskiej Akademi Nauk Substrate for epitaxial growth

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6106932B2 (en) * 2012-03-19 2017-04-05 株式会社リコー Group 13 nitride crystal and group 13 nitride crystal substrate
WO2014031152A1 (en) * 2012-08-24 2014-02-27 Sixpoint Materials, Inc. A bismuth-doped semi-insulating group iii nitride wafer and its production method
WO2016118862A1 (en) * 2015-01-22 2016-07-28 Sixpoint Materials, Inc. Seed selection and growth methods for reduced-crack group iii nitride bulk crystals
DE112016005022T5 (en) * 2015-11-02 2018-08-02 Ngk Insulators, Ltd. EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENTS, SEMICONDUCTOR ELEMENTS AND PRODUCTION PROCESS FOR EPITAXIAL SUBSTRATES FOR SEMICONDUCTOR ELEMENTS

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2267197A1 (en) 2009-06-25 2010-12-29 AMMONO Sp.z o.o. Method of obtaining bulk mono-crystalline gallium-containing nitride, bulk mono-crystalline gallium-containing nitride, substrates manufactured thereof and devices manufactured on such substrates
US8975639B2 (en) 2010-04-06 2015-03-10 Instytut Wysokich Ciśnień Polskiej Akademi Nauk Substrate for epitaxial growth

Also Published As

Publication number Publication date
CN100485888C (en) 2009-05-06
CN1965399A (en) 2007-05-16
CN1973063A (en) 2007-05-30
CN1973063B (en) 2010-09-15

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Legal Events

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