BRPI0506541A - célula solar com material de ponto quántico epitaxialmente crescido - Google Patents
célula solar com material de ponto quántico epitaxialmente crescidoInfo
- Publication number
- BRPI0506541A BRPI0506541A BRPI0506541-0A BRPI0506541A BRPI0506541A BR PI0506541 A BRPI0506541 A BR PI0506541A BR PI0506541 A BRPI0506541 A BR PI0506541A BR PI0506541 A BRPI0506541 A BR PI0506541A
- Authority
- BR
- Brazil
- Prior art keywords
- solar cell
- quantum dot
- subcell
- substrate
- epitaxially grown
- Prior art date
Links
- 239000002096 quantum dot Substances 0.000 title abstract 6
- 239000000463 material Substances 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 abstract 3
- 230000007704 transition Effects 0.000 abstract 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical class [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
"CéLULA SOLAR COM MATERIAL DE PONTO QUáNTICO EPITAXIALMENTE CRESCIDO". Onde em um primeiro aspecto, a presente invenção fornece uma célula solar monolítica semicondutora multijunção compreendendo diversas subcélulas dispostas em série, as diversas subcélulas tendo pelo menos uma subcélula incluindo um material de ponto quântico autoformado com crescimento epitaxial. Numa incorporação adicional, é fornecida uma célula solar fotovoltaica monolítica semicondutora compreendendo: um substrato de Si; uma camada de transição metamorficamente crescida no substrato de Si, a camada de transição incluindo diversas camadas de GaAs e AlGaAs; e uma primeira subcélula epitaxialmente crescida na camada de transição, a primeira subcélula incluindo um material de ponto quântico autoformado. Em um aspecto adicional, a presente invenção fornece uma célula solar fotovoltaica monolítica semicondutora compreendendo: um substrato de InP; uma primeira subcélula epitaxialmente crescida no substrato, a primeira subcélula incluindo diversas camadas de pontos quânticos de InAs intercaladas com camadas de InGaAs. Em um outro aspecto adicional, a presente invenção fornece o método de fabricação de uma célula solar fotovoltaica monolítica multijunção em um substrato, o método compreendendo a etapa de: formação de subcélula de ponto quântico pelo crescimento epitaxial de um material de ponto quântico autoformado com diversas camadas de ponto quântico intercaladas com barreiras.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53725904P | 2004-01-20 | 2004-01-20 | |
PCT/CA2005/000064 WO2005069387A1 (en) | 2004-01-20 | 2005-01-20 | Solar cell with epitaxially grown quantum dot material |
Publications (1)
Publication Number | Publication Date |
---|---|
BRPI0506541A true BRPI0506541A (pt) | 2007-02-27 |
Family
ID=34794447
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI0506541-0A BRPI0506541A (pt) | 2004-01-20 | 2005-01-20 | célula solar com material de ponto quántico epitaxialmente crescido |
Country Status (8)
Country | Link |
---|---|
US (2) | US7863516B2 (pt) |
EP (1) | EP1709690A4 (pt) |
JP (2) | JP5248782B2 (pt) |
CN (1) | CN100477289C (pt) |
AU (1) | AU2005205373B9 (pt) |
BR (1) | BRPI0506541A (pt) |
CA (1) | CA2551123A1 (pt) |
WO (1) | WO2005069387A1 (pt) |
Families Citing this family (147)
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- 2005-01-20 AU AU2005205373A patent/AU2005205373B9/en not_active Ceased
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EP1709690A4 (en) | 2009-03-11 |
JP5248782B2 (ja) | 2013-07-31 |
JP2007519237A (ja) | 2007-07-12 |
CN100477289C (zh) | 2009-04-08 |
AU2005205373B9 (en) | 2010-06-03 |
AU2005205373A1 (en) | 2005-07-28 |
CA2551123A1 (en) | 2005-07-28 |
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