TWI396294B - 量子點紅外線偵測器裝置 - Google Patents

量子點紅外線偵測器裝置 Download PDF

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TWI396294B
TWI396294B TW097143612A TW97143612A TWI396294B TW I396294 B TWI396294 B TW I396294B TW 097143612 A TW097143612 A TW 097143612A TW 97143612 A TW97143612 A TW 97143612A TW I396294 B TWI396294 B TW I396294B
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quantum dot
quantum
gallium arsenide
quantum well
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TW201019489A (en
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Shiang Yu Wang
Hong Shi Ling
Ming Cheng Lo
Chien Ping Lee
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Academia Sinica
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
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    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/755—Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less
    • Y10S977/759—Quantum well dimensioned for intersubband transitions, e.g. for use in unipolar light emitters or quantum well infrared photodetectors

Description

量子點紅外線偵測器裝置
本發明為一種偵測器裝置，特別是一種量子點紅外線偵測器裝置。
隨著近年來，已有相當多的研究投入量子點紅外線偵測器的發展，因其具有低成本，高溫操作的紅外線偵測器特性，且已大幅提升量子點紅外線偵測器的基本性能，其效用亦已大幅增進。
傳統上，量子點(Quantum Dot)係以奈米大小的窄能隙半導體原料埋入寬能隙之半導體材料中，形成准零維(Quasi-zero-dimensional)的奈米材料。其准零維自由度的電子能態(electron state)可以限制電子在不同能態之間的躍遷，故以量子點所形成的量子點紅外線偵測器(Quantum Dot Infrared Photo-detector)具有低暗電流(Low Dark Current)、高反應率(High Responsivity)以及高溫操作等各式特性。
此外，由於三維的束縛態，量子點紅外線偵測器可以吸收正向入射的紅外線，相較一般無法吸收正向入射光的量子井紅外偵測器(Quantum Well Infrared Photodetector,QWIP)而言，量子點紅外線偵測器具有簡化製程的優點。且因量子點結構之能隙差異較大，有利於波長3至5微米之中波段偵測器之製作。故而，量子點紅外線偵測器之發展亦受到相當關注。
而有關之量子點紅外線偵測器技術，早在於西元1998年即有科學刊物「Applied Physics Letter 73,963(1998)」之揭露以及科學刊物「Applied Physics Letter 73,3153(1998)」之揭露，前述兩篇文獻揭示其量子點紅外線偵測器技術之基本結構與實施例。而其量子點紅外線偵測器技術之元件基礎概念更早於1996年即公諸於世，如公開於科學文獻「Semiconductor Science Technology 11,759(1996)」中，且相較於第一個揭露相關量子點紅外線偵測器技術的美國專利編號第US 6,239,449號「Quantum dot infrared photodetectors(QDIP)」專利之內容，其於時間上之揭露更早了許多。
由於早期之量子點紅外線偵測器技術受限於自發性(self-assembled)量子點製程的限制，故為了解決其偵測波長的調整問題，科學刊物「Applied Physics Letter 79,3341(2001)」中揭露了量子井中之量子點(dots-in-a-well)結構。而利用量子井中之量子點結構，可以利用量子井的厚度改變其偵測波長，對於量子點紅外線偵測器的應用有相當的助益。然而，加入之量子井結構會影響元件之量子效率。
由前述理由，量子點紅外線偵測器之發展日益受到重視。為因應偵測器技術之未來需求，尚需發展紅外線偵測器相關技術，藉以降低偵測器製作與操作之人力與時間等成本，且能有效達成節能與減碳目的。
本發明為一種量子點紅外線偵測器裝置，首先提供一半導體基板，接著以第一接觸層形成於半導體基板之上，而能障層形成於第一接觸之上，接著，量子點主動層形成於能障層之上，最後，第二接觸層形成於量子點主動層之上。而量子點紅外線偵測器裝置結構中可具有複數個量子點主動層。
其中，量子點主動層包括了下列：將第一量子井層形成於能障層之上，而量子點層形成於第一量子井層之上，接著限制增強層形成於量子點層之上，跟著第二量子井層形成於限制增強層之上，最後，能障層形成於第二量子井層之上。
一般而言，量子點偵測器之量子效率小於1%，而本發明可以提升一個數量級至數個百分比。
本發明與現有已知技術相比，可以提升元件之量子效率約達20倍之多。
本發明可以增加偵測訊號時之訊雜比，在相同工作溫度時，提升紅外線偵測之靈敏度，或是在相同的靈敏度下提升工作溫度。
本發明之主要應用在於偵測物體本身所發出之黑體輻射，即在不需要任何光源的情形下，就可以偵測到在室溫下的物體。
本發明改善量子井中之量子點結構，且本發明將量子點上增加一高能隙之能障結構，使量子點中之電子受到較強的量子侷限效果，故可以增加電子吸收紅外線之效率，藉以提升元件的性能。
故而，關於本發明之優點與精神可以藉由以下發明詳述及所附圖式得到進一步的瞭解。
本發明為一種量子點紅外線偵測器裝置，主要包括有下列組成元件：如第1圖所示，提供一半導體基板101，其係為一未摻雜之砷化鎵(GaAs)半導體基板101。
如第1圖所示之第一接觸(Contact)層102，係為一摻雜五族元素之n+ 型砷化鎵層102，形成於半導體基板101之上，厚度約500奈米(nm)。
如第1圖所示之能障(Barrier)層103，形成於第一接觸102之上。該能障層103係為一未摻雜之砷化鎵層103，亦或是砷化鋁鎵層(AlGaAs)103，而該能障層103之厚度約介於10~150奈米之間，本實施例中能障層103的厚度約為53奈米。
接著，如第1圖所示之量子點主動層104，形成於能障層103之上。
最後，如第1圖所示之第二接觸層105，形成於量子點主動層104之上，而第二接觸層105係為一摻雜五族元素之n+ 型砷化鎵層105。
前述之量子點主動層104，係由一量子點結構層104所堆疊而成，故而該量子點主動層104包括了下列：如第2圖所示之第一量子井層201，形成於能障層103之上，該第一量子井層201為一未摻雜之砷化銦鎵(In0.15 Ga0.85 As)層，其中銦(In)之含量為0%~20%，而該第一量子井層201之厚度約介於0~15奈米之間，本實施例中第一量子井層201的厚度約為2奈米。
如第2圖所示之量子點(InAs QD)層202，形成於第一量子井層201之上，其密度約須大於1×109 cm-2 。
如第2圖所示之限制增強(Confinement Enhancing)層203，形成於量子點層202之上，該限制增強層203為一未摻雜之砷化鋁鎵(Al0.3 Ga0.7 As)層203，其中鋁之含量為0%~35%，該限制增強層203之厚度約介於2~5奈米之間，本實施例中限制增強層203的厚度約為2.5奈米。
如第2圖所示之第二量子井層204，形成於限制增強層203之上，該第二量子井層204係為係為一未摻雜之砷化銦鎵(In0.15 Ga0.85 As)層204，其中銦之含量為0%~20%，而該第二量子井層204之厚度約介於0~15奈米之間，本實施例中第二量子井層204的厚度約為4.5奈米。
如第2圖所示之能障(Barrier)層205，形成於第二量子井層204之上。該能障層205係為一未摻雜之砷化鎵層205，亦或是砷化鋁鎵層205，而該能障層205之厚度約介於10~150奈米(nm)之間，本實施例中能障層205的厚度約為53奈米。
而如第3圖所示，增加一量子點主動層314於既有之量子點主動層104之上。該量子點主動層314亦包括了第3圖所示之第一量子井層301，且依序為量子點層302形成於第一量子井層301之上，限制增強層303形成於量子點層302之上，第二量子井層304形成於限制增強層303之上，能障層305形成於第二量子井層304之上；最後形成第二接觸層105於能障層305之上。
故而，本發明量子點紅外線偵測器之結構中，可增加複數個量子點主動層，如量子點主動層104或是量子點主動層314於能障層與接觸層之間。而於本發明中，可增加量子點主動層總數至3層到100層左右。
而於第4圖所示，經測試本發明與現有量子點紅外線偵測器技術，且以偏壓值(Bias Voltage)與光響應率值(Peak Responsivity)所作測試圖之比較，證明本發明可提升元件之量子效率約20倍。且因一般量子點偵測器之量子效率小於1%，本發明可以提升一個數量級到數個百分比。且本發明可以增加偵測訊號時之訊雜比，在相同工作溫度時，提升紅外線偵測之靈敏度，或是在相同的靈敏度下提升工作溫度。相較一般可於77K下的慣用絕對溫度(液態氮之沸點溫度)，在實驗室中測試，顯示本發明之工作溫度可達200K絕對溫度。
本發明之主要應用在於偵測物體本身所發出之黑體輻射，即在不需要任何光源的情形下，就可以偵測室溫的物體。本發明之類似技術在早期以軍事應用為主，可提供戰場之物體偵測、熱追蹤飛彈以及早期預警系統使用。近來隨著技術的進步，應用本發明基本原理之類似手持式系統已經可以應用在一般保安監視、火災監控與起火點偵測、特定氣體排放之監控、半導體製程之非破壞性檢測以及癌細胞之偵測。
本發明主要是針對在量子井中之量子點結構加以改善，本發明係將量子點上增加一高能隙之能障結構，使量子點中之電子受到較強的量子侷限效果，故可以增加電子吸收紅外線之效率，進而提升元件的性能。
以上所述僅為本發明之較佳實施例而已，並非用以限定本發明之申請專利範圍；凡其它未脫離本發明所揭示之精神下所完成之等效改變或修飾，均應包含在下述之申請專利範圍內。
101．．．半導體基板
102．．．第一接觸層
103．．．能障層
104．．．量子點主動層
105．．．第二接觸層
201．．．第一量子井層
202．．．量子點層
203．．．限制增強層
204．．．第二量子井層
205．．．能障層
301．．．第一量子井層
302．．．量子點層
303．．．限制增強層
304．．．第二量子井層
305．．．能障層
314．．．量子點主動層
第1圖所示為本發明之較佳實施例圖。
第2圖所示為本發明量子點主動層之較佳實施例圖。
第3圖所示為本發明之複數個量子點主動層較佳實施例圖。
第4圖所示為本發明與習知技術的測試比較圖。
101．．．半導體基板
102．．．第一接觸層
103．．．能障層
104．．．量子點主動層
105．．．第二接觸層
201．．．第一量子井層
202．．．量子點層
203．．．限制增強層
204．．．第二量子井層
205．．．能障層

Claims (19)

  1. 一種量子點紅外線偵測器裝置，至少包含：一半導體基板；一第一接觸層形成於該半導體基板上；一能障層形成於該第一接觸上；一量子點主動層形成於該能障層上，其中該量子點主動層至少包含：一第一量子井層形成於一能障層上；一量子點層形成於該第一量子井層上；一限制增強層形成於該量子點層上；一第二量子井層形成於該限制增強層上；以及一能障層形成於該第二量子井層上；以及一第二接觸層形成於該量子點主動層上，藉以形成該量子點紅外線偵測器裝置。
  2. 如申請專利範圍第1項之該量子點主動層，其中該第一量子井層至少包含未摻雜之砷化銦鎵層。
  3. 如申請專利範圍第1項之該量子點主動層，其中該限制增強層至少包含未摻雜之砷化鋁鎵層。
  4. 如申請專利範圍第1項之該量子點主動層，其中該第二量子井層至少包含未摻雜之砷化銦鎵層。
  5. 如申請專利範圍第1項之該量子點主動層，其中該能障層至少包含未摻雜之砷化鎵層。
  6. 如申請專利範圍第1項之該量子點主動層，其中該能障 層至少包含砷化鋁鎵層。
  7. 一種量子點紅外線偵測器裝置，至少包含：一半導體基板；一第一接觸層形成於該半導體基板上；一能障層形成於該第一接觸上；複數個量子點主動層形成於該能障層上，其中該複數個量子點主動層中的每個量子點主動層至少包含：一第一量子井層形成於一能障層上；一量子點層形成於該第一量子井層上；一限制增強層形成於該量子點層上；一第二量子井層形成於該限制增強層上；以及一能障層形成於該第二量子井層上；以及一第二接觸層形成於該量子點主動層上，藉以形成該量子點紅外線偵測器裝置。
  8. 如申請專利範圍第7項之該量子點主動層，其中該第一量子井層至少包含未摻雜之砷化銦鎵層。
  9. 如申請專利範圍第7項之該量子點主動層，其中該限制增強層至少包含未摻雜之砷化鋁鎵層。
  10. 如申請專利範圍第7項之該量子點主動層，其中該第二量子井層至少包含未摻雜之砷化銦鎵層。
  11. 如申請專利範圍第7項之該量子點主動層，其中該能障層至少包含未摻雜之砷化鎵層。
  12. 如申請專利範圍第7項之該量子點主動層，其中該能障層至少包含砷化鋁鎵層。
  13. 一量子點主動層，至少包含：一第一量子井層形成於一能障層上；一量子點層形成於該第一量子井層上；一限制增強層形成於該量子點層上；一第二量子井層形成於該限制增強層上；以及一能障層形成於該第二量子井層上。
  14. 如申請專利範圍第13項之該量子點主動層，其中該量子點主動層至少包含使用於一量子點紅外線偵測器裝置。
  15. 如申請專利範圍第13項之該量子點主動層，其中該第一量子井層至少包含未摻雜之砷化銦鎵層。
  16. 如申請專利範圍第13項之該量子點主動層，其中該限制增強層至少包含未摻雜之砷化鋁鎵層。
  17. 如申請專利範圍第13項之該量子點主動層，其中該第二量子井層至少包含未摻雜之砷化銦鎵層。
  18. 如申請專利範圍第13項之該量子點主動層，其中該能障層至少包含未摻雜之砷化鎵層。
  19. 如申請專利範圍第13項之該量子點主動層，其中該能障層至少包含砷化鋁鎵層。
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