JP2007305705A - 光検知装置およびその製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000002096 quantum dot Substances 0.000 claims abstract description 80
- 238000001514 detection method Methods 0.000 claims description 72
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 13
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 11
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 10
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 4
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 4
- 238000005036 potential barrier Methods 0.000 abstract description 24
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000009826 distribution Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005381 potential energy Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
- Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
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Abstract
【解決手段】埋め込み層16と、埋め込み層16によって埋め込まれた量子ドット15aと、を有する量子ドット構造15と、動作時に、量子ドット構造15に対して垂直方向に流れる電子の量子ドット構造15下流側に、埋め込み層12,14と、禁制帯幅が埋め込み層12,14よりも小さい量子井戸層13aを有する量子井戸構造13が形成されることで、光検知部10aの電子が超えなくてはならない電位障壁の温度依存性が小さくなり、埋め込み層14の高温時の電位障壁が低下する。
【選択図】図1
Description
この量子井戸層を、例えば、ガリウム砒素(GaAs)系の半導体材料により構成することにより、これまで困難とされていた波長が10μm程度の赤外光を検知することが可能となった。
量子ドット構造を利用した光検知装置は、光検知部の量子ドット構造の積層面に対して、垂直に入射する光を検知することができる。そして、光励起されたキャリアが再び量子ドットに捕獲される確率が少ないことから、高い光電流利得を有し、高い感度が得られることが期待される。さらに、光検知部に量子ドット構造を利用すると、比較的高い温度でも暗電流に埋もれずに信号電流の検出が期待される。このため、暗電流制御のための量子ドット構造の冷却装置の簡素化が可能となり、光検知装置の小型化および冷却コストの削減も期待される。
この原因の1つとして、光検知部の温度上昇による電子の放出確率の低下が挙げられる。以下、この機構について説明する。
Ec−Ef=kBT×ln(Nc/Nd)・・・(1)
なお、式(1)において、kBはボルツマン定数、Tは光検知部100aの温度、Ncは埋め込み層102,106の伝導帯有効状態密度、Ndは不純物密度である。
まず、光検知装置の動作原理について説明する。
図1は光検知装置の要部断面模式図である。
ここでは、簡単のため1準位系を例に、光検知装置10の光検知部10aの温度と電位障壁について簡単に説明する。
なお、式(2)において、mは電子の有効質量、hはプランク定数である。
この時、電位障壁Ec−Efは、
Ec−Ef=Ec−Ei−kBT×ln{exp(nh2/4πmkBT)−1}・・・(3)
と表すことができる。
図4は、光検知装置の要部断面模式図である。
図4に示す光検知装置50は、光検知部50aが量子井戸構造55と量子ドット構造57の組み合わされた構造が複数回積層されることにより構成されている。なお、図4は光検知装置50の積層面に垂直方向下向きに電子を流す場合の構成を図示している。
最後に、多層量子ドット構造の最上層上に、GaAs上部コンタクト層59を膜厚が50nm形成することにより、光検知装置50が作製される。
10a 光検知部
11 半導体基板
12,14,16 埋め込み層
13 量子井戸構造
13a 量子井戸層
15 量子ドット構造
15a 量子ドット
Claims (10)
- 量子ドットを有する光検知装置において、
第1の埋め込み層と、前記第1の埋め込み層によって埋め込まれた量子ドットと、を有する量子ドット構造と、
動作時に、前記量子ドット構造に対して垂直方向に流れる電子の前記量子ドット構造下流側に形成され、第2,第3の埋め込み層と、前記第2,第3の埋め込み層に挟まれ、禁制帯幅が前記第2,第3の埋め込み層よりも小さい量子井戸層と、を有する量子井戸構造と、
を有することを特徴とする光検知装置。 - 前記量子ドット構造と、前記量子井戸構造と、を交互に複数回積層することを特徴とする請求項1記載の光検知装置。
- 前記第1,第2,第3の埋め込み層に、アルミニウムガリウム砒素を用いることを特徴とする請求項1記載の光検知装置。
- 前記量子ドットに、インジウム砒素またはインジウムガリウム砒素を用いることを特徴とする請求項1記載の光検知装置。
- 前記量子井戸層に、ガリウム砒素を用いることを特徴とする請求項1記載の光検知装置。
- 量子ドットを有する光検知装置の製造方法において、
第1の埋め込み層と、前記第1の埋め込み層によって埋め込まれた量子ドットと、を有する量子ドット構造を形成する工程と、
動作時に、前記量子ドット構造に対して垂直方向に流れる電子の前記量子ドット構造下流側に形成され、第2,第3の埋め込み層と、前記第2,第3の埋め込み層に挟まれ、禁制帯幅が前記第2,第3の埋め込み層よりも小さい量子井戸層と、を有する量子井戸構造を形成する工程と、
を有することを特徴とする光検知装置の製造方法。 - 前記量子ドット構造と、前記量子井戸構造と、を交互に複数回積層することを特徴とする請求項6記載の光検知装置の製造方法。
- 前記第1,第2,第3の埋め込み層に、アルミニウムガリウム砒素を用いることを特徴とする請求項6記載の光検知装置の製造方法。
- 前記量子ドットに、インジウム砒素またはインジウムガリウム砒素を用いることを特徴とする請求項6記載の光検知装置の製造方法。
- 前記量子井戸層に、ガリウム砒素を用いることを特徴とする請求項6記載の光検知装置の製造方法。
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JP2006131159A JP4829004B2 (ja) | 2006-05-10 | 2006-05-10 | 光検知装置およびその製造方法 |
US11/581,583 US7399988B2 (en) | 2006-05-10 | 2006-10-17 | Photodetecting device and method of manufacturing the same |
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JP2006131159A JP4829004B2 (ja) | 2006-05-10 | 2006-05-10 | 光検知装置およびその製造方法 |
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JP2007305705A true JP2007305705A (ja) | 2007-11-22 |
JP4829004B2 JP4829004B2 (ja) | 2011-11-30 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011066319A (ja) * | 2009-09-18 | 2011-03-31 | Fujitsu Ltd | 光検知器及びその製造方法 |
JP2012109434A (ja) * | 2010-11-18 | 2012-06-07 | Technical Research & Development Institute Ministry Of Defence | 量子ドット型赤外線検知器及び赤外線イメージセンサ |
JP2014063885A (ja) * | 2012-09-21 | 2014-04-10 | Nec Corp | 赤外線検出器 |
JP2021022662A (ja) * | 2019-07-26 | 2021-02-18 | 国立大学法人神戸大学 | 量子型赤外線センサ |
CN114678429A (zh) * | 2022-05-30 | 2022-06-28 | 陕西半导体先导技术中心有限公司 | 一种复合结构的MISIM型4H-SiC紫外探测器及制备方法 |
Families Citing this family (7)
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KR100921693B1 (ko) * | 2007-10-23 | 2009-10-15 | 한국과학기술연구원 | In(As)Sb 반도체의 격자 부정합 기판상 제조방법 및이를 이용한 반도체 소자 |
JP4459286B2 (ja) * | 2008-08-08 | 2010-04-28 | 防衛省技術研究本部長 | 赤外線検知器 |
TWI400813B (zh) * | 2008-08-26 | 2013-07-01 | Academia Sinica | 量子點及量子井混合模式紅外線偵測器裝置及其形成方法 |
RU2469432C1 (ru) * | 2011-07-28 | 2012-12-10 | Закрытое Акционерное Общество "Светлана-Рост" | Способ выращивания гетероструктуры для инфракрасного фотодетектора |
US9520514B2 (en) * | 2013-06-11 | 2016-12-13 | National Taiwan University | Quantum dot infrared photodetector |
US11728448B2 (en) * | 2021-11-15 | 2023-08-15 | International Business Machines Corporation | Fabrication of a semiconductor device including a quantum dot structure |
US11881533B2 (en) | 2021-11-15 | 2024-01-23 | International Business Machines Corporation | Fabrication of a semiconductor device including a quantum dot structure |
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JPH03265827A (ja) * | 1989-12-05 | 1991-11-26 | Thomson Csf | 量子井戸光学デバイス |
JPH0992879A (ja) * | 1995-09-20 | 1997-04-04 | Daido Steel Co Ltd | 半導体素子の製造法 |
JPH10326906A (ja) * | 1997-05-26 | 1998-12-08 | Hamamatsu Photonics Kk | 光検出素子及び撮像素子 |
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JP2003218366A (ja) * | 2002-01-25 | 2003-07-31 | Japan Science & Technology Corp | 量子ドット赤外光検出器 |
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JP2000275692A (ja) | 1999-03-25 | 2000-10-06 | Fujitsu Ltd | 半導体量子ドットを用いた波長変換素子 |
JP2000323742A (ja) | 1999-05-06 | 2000-11-24 | Fujitsu Ltd | 赤外線検出装置 |
GB2365210B (en) * | 2000-07-28 | 2003-01-22 | Toshiba Res Europ Ltd | An optical device and a method of making an optical device |
-
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- 2006-05-10 JP JP2006131159A patent/JP4829004B2/ja not_active Expired - Fee Related
- 2006-10-17 US US11/581,583 patent/US7399988B2/en active Active
Patent Citations (6)
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JPH03265827A (ja) * | 1989-12-05 | 1991-11-26 | Thomson Csf | 量子井戸光学デバイス |
JPH0992879A (ja) * | 1995-09-20 | 1997-04-04 | Daido Steel Co Ltd | 半導体素子の製造法 |
JPH10326906A (ja) * | 1997-05-26 | 1998-12-08 | Hamamatsu Photonics Kk | 光検出素子及び撮像素子 |
JP2001044453A (ja) * | 1999-07-30 | 2001-02-16 | Fujitsu Ltd | 光検出素子 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011066319A (ja) * | 2009-09-18 | 2011-03-31 | Fujitsu Ltd | 光検知器及びその製造方法 |
JP2012109434A (ja) * | 2010-11-18 | 2012-06-07 | Technical Research & Development Institute Ministry Of Defence | 量子ドット型赤外線検知器及び赤外線イメージセンサ |
JP2014063885A (ja) * | 2012-09-21 | 2014-04-10 | Nec Corp | 赤外線検出器 |
JP2021022662A (ja) * | 2019-07-26 | 2021-02-18 | 国立大学法人神戸大学 | 量子型赤外線センサ |
JP7291942B2 (ja) | 2019-07-26 | 2023-06-16 | 国立大学法人神戸大学 | 量子型赤外線センサ |
CN114678429A (zh) * | 2022-05-30 | 2022-06-28 | 陕西半导体先导技术中心有限公司 | 一种复合结构的MISIM型4H-SiC紫外探测器及制备方法 |
CN114678429B (zh) * | 2022-05-30 | 2022-08-26 | 陕西半导体先导技术中心有限公司 | 一种复合结构的MISIM型4H-SiC紫外探测器及制备方法 |
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US20070262292A1 (en) | 2007-11-15 |
US7399988B2 (en) | 2008-07-15 |
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