JP5504468B2 - 半導体量子ドット及び同形成方法 - Google Patents
半導体量子ドット及び同形成方法 Download PDFInfo
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- JP5504468B2 JP5504468B2 JP2009044413A JP2009044413A JP5504468B2 JP 5504468 B2 JP5504468 B2 JP 5504468B2 JP 2009044413 A JP2009044413 A JP 2009044413A JP 2009044413 A JP2009044413 A JP 2009044413A JP 5504468 B2 JP5504468 B2 JP 5504468B2
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- quantum dots
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- 239000002096 quantum dot Substances 0.000 title claims description 81
- 238000000034 method Methods 0.000 title claims description 55
- 239000004065 semiconductor Substances 0.000 title claims description 47
- 230000015572 biosynthetic process Effects 0.000 title claims description 29
- 239000000758 substrate Substances 0.000 claims description 46
- 239000013078 crystal Substances 0.000 claims description 44
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 26
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 23
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 15
- 230000007246 mechanism Effects 0.000 claims description 10
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 8
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 7
- 229910005542 GaSb Inorganic materials 0.000 claims description 6
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 55
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 25
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 17
- 239000002086 nanomaterial Substances 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000002052 molecular layer Substances 0.000 description 3
- 238000012014 optical coherence tomography Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- HDDJZDZAJXHQIL-UHFFFAOYSA-N gallium;antimony Chemical compound [Ga+3].[Sb] HDDJZDZAJXHQIL-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Semiconductor Lasers (AREA)
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Description
a) GaAs基板上に成長したGaAs上のInAs、およびInxGa1−xAs、InP、InxGa1−xAsyP1−y
b) GaAs基板上に成長したAlGaAs上のInAs、およびInxGa1−xAs、InP、InxGa1−xAsyP1−y
c) GaAs基板上に成長したInGaAs上のInAs、およびInxGa1−xAs、InP、InxGa1−xAsyP1−y
d) GaAs基板上に成長したGaAsSb上のInAs、およびInxGa1−xAs、InP、InxGa1−xAsyP1−y
e) InP基板上に成長したInP上のInAs、およびInxGa1−xAs、InP、InxGa1−xAsyP1−y
f) InP基板上に成長したInGaAs上のInAs、およびInxGa1−xAs、InP、InxGa1−xAsyP1−y
g) InP基板上に成長したInAlAs上のInAs、およびInxGa1−xAs、InP、InxGa1−xAsyP1−y
h) InP基板上に成長したInGaAlAsP上のInAs、およびInxGa1−xAs、InP、InxGa1−xAsyP1−y
i) GaSb基板上に成長したGaSb上のInGaSb。
Claims (6)
- 自己組織化機構により半導体量子ドットを形成する方法において、基板温度が400℃〜540℃、原料元素の蒸気圧が2/5×10 −5 〜1×10 −4 Torr、量子ドットの結晶成長レート及び/もしくは埋め込み層の結晶成長速度が0.1nm/s〜0.5nm/sであり、基板温度をパルス制御で管理することを特徴とする半導体量子ドット形成方法。
- 前記結晶成長は分子線エピタキシャル法もしくは有機金属気成長法を用いたことを特徴とする請求項1記載の半導体量子ドット形成方法。
- 前記半導体量子ドットを形成する基板としてGaAs、InP、GaSbのいずれかを採用し、量子ドットを挟む化合物の下層としてGaAs、AlGaAs、InGaAs、GaAsSb、InP、InGaAs、InAlAs、InGaAlAsP、GaSbのいずれかを採用し、同上層としてInAs、InxGa1−xAs、InP、InxGa1−xAsyP1−y、InGaSbのいずれかを採用したことを特徴とする請求項1乃至2のうちいずれか1項記載の半導体量子ドット形成方法。
- 前記半導体量子ドットの成長温度を400℃〜540℃としたことを特徴とする請求項1乃至3のうちいずれか1項記載の半導体量子ドット形成方法。
- 前記埋め込み層の成長温度を400℃〜540℃としたことを特徴とする請求項1乃至3のうちいずれか1項記載の半導体量子ドット形成方法。
- 請求項1乃至5のうちいずれか1項記載の半導体量子ドット形成方法により形成されることを特徴とする半導体量子ドット。
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JP2000196193A (ja) * | 1998-12-25 | 2000-07-14 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP3768790B2 (ja) * | 2000-09-08 | 2006-04-19 | 三菱化学株式会社 | 量子ドット構造体及びそれを有する半導体デバイス装置 |
JP2004342851A (ja) * | 2003-05-15 | 2004-12-02 | Sharp Corp | 半導体膜の成長方法およびこの半導体膜を備えた半導体素子 |
JP5248782B2 (ja) * | 2004-01-20 | 2013-07-31 | シリアム・テクノロジーズ・インコーポレーテッド | エピタキシャルに成長させた量子ドット材料を有する太陽電池 |
JP4873527B2 (ja) * | 2004-08-26 | 2012-02-08 | 独立行政法人産業技術総合研究所 | 半導体発光素子の製造方法 |
JP4707475B2 (ja) * | 2005-06-17 | 2011-06-22 | 国立大学法人 東京大学 | 化合物半導体結晶の成長方法、その成長方法を用いて成長した化合物半導体結晶の層を備えた半導体装置及び半導体基板 |
JP5095260B2 (ja) * | 2006-05-15 | 2012-12-12 | 富士通株式会社 | 半導体発光装置の製造方法 |
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