US8373060B2 - Semiconductor grain microstructures for photovoltaic cells - Google Patents
Semiconductor grain microstructures for photovoltaic cells Download PDFInfo
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- US8373060B2 US8373060B2 US11/923,070 US92307007A US8373060B2 US 8373060 B2 US8373060 B2 US 8373060B2 US 92307007 A US92307007 A US 92307007A US 8373060 B2 US8373060 B2 US 8373060B2
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- Prior art keywords
- oxide
- type semiconductor
- layers
- semiconductor
- grains
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Abstract
Description
where φ is one of C, Si, Ge or Sn, and K1 and K2 are, independently one of the other, conjugated systems. One example organic hole conductor is spiro-OMeTAD (2,2′,7,7′-tretakis(N,N-di-p-methoxyphenyl-amine) 9-9′-spirobifluorene). The conductivity of pure spiro-OMeTAD is low. Therefore the material cannot be used, without some modification, in solar cells. Rather, partial oxidation of spiro-OMeTAD by N(PhBr)3SbCl6 can be used to control the dopant level and to increase the conductivity of the hole conducting layer. A second additive Li[CF3SO2]2N can also be added, since Li+ ions have been shown to increase the current output and overall efficiency of the device. The hole conductor matrix can be applied by spin-coating of a solution of the hole conductor in chlorobenzene. MEH-PPV [poly[2-methoxy-[5-(2′-ethyl)hexyl]oxy-p-phenylenevinylene]] and PEDOT:PSS [poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate)] can also be used as hole conductor materials. To increase its conductivity PEDOT:PSS can be mixed with glycerin, N-methylpyrrolidone, and isopropanol.
Claims (6)
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US12/016,172 US8158880B1 (en) | 2007-01-17 | 2008-01-17 | Thin-film photovoltaic structures including semiconductor grain and oxide layers |
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US13/754,193 US20130133727A1 (en) | 2006-10-24 | 2013-01-30 | Semiconductor grain microstructures for photovoltaic cells |
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US20130167914A1 (en) * | 2009-03-09 | 2013-07-04 | Brian Josef Bartholomeusz | Deposition of photovoltaic thin films by plasma spray deposition |
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