TW465101B - Semiconductor substrate and method for producing the same - Google Patents

Semiconductor substrate and method for producing the same Download PDF

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Publication number
TW465101B
TW465101B TW88115244A TW88115244A TW465101B TW 465101 B TW465101 B TW 465101B TW 88115244 A TW88115244 A TW 88115244A TW 88115244 A TW88115244 A TW 88115244A TW 465101 B TW465101 B TW 465101B
Authority
TW
Taiwan
Prior art keywords
silicon layer
heat treatment
porous
semiconductor substrate
pore density
Prior art date
Application number
TW88115244A
Inventor
Nobuhiko Sato
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP25127098 priority Critical
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of TW465101B publication Critical patent/TW465101B/en

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02441Group 14 semiconducting materials
    • H01L21/0245Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02494Structure
    • H01L21/02513Microstructure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02658Pretreatments
    • H01L21/02661In-situ cleaning
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76259Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer

Abstract

There are disclosed a semiconductor substrate having a non-porous monocrystalline layer with reduced crystal defects on a porous silicon layer and a method of forming the substrate. The forming method comprises a heat treatment step of heat-treating a porous silicon layer in an atmosphere not containing a silicon-based gas and the step of growing a non-porous monocrystalline layer on the porous silicon layer, wherein the heat treatment is conducted under the conditions such that the etched thickness of the silicon layer is 2 nm or less and that the rate of change r of the surface pore density of the porous silicon layer (r=surface pore density after heat treatment/surface pore density before heat treatment) satisfies the relationship 1/10000 ≤ r ≤ 1.
TW88115244A 1998-09-04 1999-09-03 Semiconductor substrate and method for producing the same TW465101B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25127098 1998-09-04

Publications (1)

Publication Number Publication Date
TW465101B true TW465101B (en) 2001-11-21

Family

ID=17220304

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88115244A TW465101B (en) 1998-09-04 1999-09-03 Semiconductor substrate and method for producing the same

Country Status (5)

Country Link
US (1) US6593211B2 (en)
EP (1) EP0984484A2 (en)
KR (1) KR100352368B1 (en)
CN (1) CN1250945A (en)
TW (1) TW465101B (en)

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US6984571B1 (en) * 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
WO2001028000A1 (en) * 1999-10-14 2001-04-19 Shin-Etsu Handotai Co., Ltd. Method for manufacturing soi wafer, and soi wafer
JP2001297989A (en) * 2000-04-14 2001-10-26 Mitsubishi Electric Corp Semiconductor substrate and manufacturing method thereof and semiconductor device and manufacturing method thereof
FR2817395B1 (en) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Process for manufacturing a substrate in particular for optics, electronics or optoelectronics and substrate obtained by this method
US7157344B2 (en) * 2000-12-20 2007-01-02 Sony Corporation Vapor-phase growth method, semiconductor manufacturing method and semiconductor device manufacturing method
US7101772B2 (en) * 2000-12-30 2006-09-05 Texas Instruments Incorporated Means for forming SOI
US7108748B2 (en) * 2001-05-30 2006-09-19 Asm America, Inc. Low temperature load and bake
DE10131249A1 (en) * 2001-06-28 2002-05-23 Wacker Siltronic Halbleitermat Production of a film or a layer of semiconductor material comprises producing structures of repeating recesses on the surface of a semiconductor material
US6783862B2 (en) * 2001-12-13 2004-08-31 International Business Machines Corporation Toughness, adhesion and smooth metal lines of porous low k dielectric interconnect structures
US6812116B2 (en) * 2002-12-13 2004-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a wafer with strained channel layers for increased electron and hole mobility for improving device performance
TWI242232B (en) * 2003-06-09 2005-10-21 Canon Kk Semiconductor substrate, semiconductor device, and method of manufacturing the same
WO2005001916A1 (en) * 2003-06-26 2005-01-06 Shin-Etsu Handotai Co., Ltd. Method for producing silicon epitaxial wafer and silicon epitaxial wafer
JP2005136383A (en) * 2003-10-09 2005-05-26 Canon Inc Organic semiconductor device, manufacturing method of the same and organic semiconductor device
JP2005136214A (en) * 2003-10-30 2005-05-26 Nec Corp Method of manufacturing substrate for thin-film device
JP5248782B2 (en) 2004-01-20 2013-07-31 シリアム・テクノロジーズ・インコーポレーテッド Solar cell having quantum dot material grown epitaxially
US9018515B2 (en) 2004-01-20 2015-04-28 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material
DE102004010377A1 (en) * 2004-03-03 2005-09-22 Schott Ag Preparation of substrate wafers for low-defect semiconductor devices, their use, as well as components obtained thereby
WO2005087983A2 (en) * 2004-03-05 2005-09-22 University Of North Carolina At Charlotte Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys
US20050221591A1 (en) * 2004-04-06 2005-10-06 International Business Machines Corporation Method of forming high-quality relaxed SiGe alloy layers on bulk Si substrates
JP4626175B2 (en) * 2004-04-09 2011-02-02 株式会社Sumco Soi substrate manufacturing method of
US7256077B2 (en) * 2004-05-21 2007-08-14 Freescale Semiconductor, Inc. Method for removing a semiconductor layer
KR100627888B1 (en) * 2004-05-25 2006-09-25 도시바세라믹스가부시키가이샤 A substrate for growth of chemical compound semiconductor, a chemical compound semiconductor using the substrate and a process for producing them
US20060027459A1 (en) * 2004-05-28 2006-02-09 Lake Shore Cryotronics, Inc. Mesoporous silicon infrared filters and methods of making same
US20060138601A1 (en) * 2004-12-27 2006-06-29 Memc Electronic Materials, Inc. Internally gettered heteroepitaxial semiconductor wafers and methods of manufacturing such wafers
TWI261316B (en) * 2005-12-28 2006-09-01 Ind Tech Res Inst Wafer bonding method
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US7789965B2 (en) * 2006-09-19 2010-09-07 Asm Japan K.K. Method of cleaning UV irradiation chamber
JP4753841B2 (en) * 2006-11-10 2011-08-24 株式会社日立国際電気 A method of manufacturing a semiconductor device
US8124916B2 (en) * 2007-04-16 2012-02-28 Maxim Integrated Products, Inc. Thermal processing of silicon wafers
US20080289650A1 (en) * 2007-05-24 2008-11-27 Asm America, Inc. Low-temperature cleaning of native oxide
US7759199B2 (en) 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
US7868374B2 (en) * 2008-02-21 2011-01-11 International Business Machines Corporation Semitubular metal-oxide-semiconductor field effect transistor
US7871937B2 (en) 2008-05-16 2011-01-18 Asm America, Inc. Process and apparatus for treating wafers
US8367528B2 (en) 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
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US20110272707A1 (en) * 2010-05-06 2011-11-10 Qs Semiconductor Australia Pty Ltd Substrates and methods of forming film structures to facilitate silicon carbide epitaxy
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JP5912368B2 (en) 2011-03-22 2016-04-27 グローバルウェーハズ・ジャパン株式会社 Heat treatment method and the silicon wafer of silicon wafer
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JP2743391B2 (en) * 1988-08-25 1998-04-22 ソニー株式会社 A method of manufacturing a semiconductor memory
JP2608351B2 (en) 1990-08-03 1997-05-07 キヤノン株式会社 Process for producing a semiconductor and a semiconductor member
DE69334324D1 (en) * 1992-01-30 2010-05-06 Canon Kk Production method for semiconductor substrate
US6136684A (en) * 1995-07-21 2000-10-24 Canon Kabushiki Kaisha Semiconductor substrate and process for production thereof
JP3216078B2 (en) 1995-07-21 2001-10-09 キヤノン株式会社 The method of manufacturing a semiconductor substrate and a semiconductor substrate
CA2233115C (en) * 1997-03-27 2002-03-12 Canon Kabushiki Kaisha Semiconductor substrate and method of manufacturing the same
CN1249531A (en) * 1998-09-04 2000-04-05 佳能株式会社 Process for mfg. semiconductor substrate

Also Published As

Publication number Publication date
EP0984484A2 (en) 2000-03-08
KR20000022994A (en) 2000-04-25
US20020127820A1 (en) 2002-09-12
KR100352368B1 (en) 2002-09-11
US6593211B2 (en) 2003-07-15
CN1250945A (en) 2000-04-19

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