JP2007519237A - エピタキシャルに成長させた量子ドット材料を有する太陽電池 - Google Patents
エピタキシャルに成長させた量子ドット材料を有する太陽電池 Download PDFInfo
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 219
- 239000000463 material Substances 0.000 title claims abstract description 166
- 239000000758 substrate Substances 0.000 claims abstract description 112
- 239000004065 semiconductor Substances 0.000 claims abstract description 53
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 101
- 230000004888 barrier function Effects 0.000 claims description 59
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 42
- 238000010521 absorption reaction Methods 0.000 claims description 39
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 29
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 25
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 23
- 230000007704 transition Effects 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 136
- 239000000203 mixture Substances 0.000 description 31
- 229910045601 alloy Inorganic materials 0.000 description 30
- 239000000956 alloy Substances 0.000 description 30
- 238000006243 chemical reaction Methods 0.000 description 28
- 238000000407 epitaxy Methods 0.000 description 22
- 230000004907 flux Effects 0.000 description 22
- 239000002019 doping agent Substances 0.000 description 18
- 230000005855 radiation Effects 0.000 description 15
- 238000001228 spectrum Methods 0.000 description 14
- 208000012868 Overgrowth Diseases 0.000 description 13
- 230000007547 defect Effects 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- 238000000151 deposition Methods 0.000 description 9
- 230000008901 benefit Effects 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 230000001351 cycling effect Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 238000003795 desorption Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 239000002086 nanomaterial Substances 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000005283 ground state Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000013139 quantization Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 206010011906 Death Diseases 0.000 description 2
- -1 InGaP Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Abstract
【選択図】 図2
Description
本発明は、自己組織化量子ドット材料を有する少なくとも一つのサブセルを備えたモノリシック半導体光起電太陽電池を提供する。斯かる太陽電池の製造方法も提供される。この方法は、太陽電池の少なくとも一つのサブセルにおける自己組織化量子ドット材料のエピタキシャルな成長を用いている。
Claims (34)
- 直列に配置された複数のサブセルを備え、複数のサブセルがエピタキシャルに成長させた自己組織化量子ドット材料を含む少なくとも一つのサブセルを有するモノリシック多接合半導体光起電太陽電池。
- サブセル内に形成されたトンネル接合を更に備え、トンネル接合がサブセルを電気的に接続するためのものである請求項1記載の太陽電池。
- 複数のサブセルが上に配置された導電性の基板を、更に備えた請求項1記載の太陽電池。
- 各々のサブセルが有効バンドギャップエネルギーを有し、サブセルは有効バンドギャップエネルギーが大きくなる順に配置され、最も低い有効バンドギャップエネルギーを有するサブセルが基板に最も近い請求項3記載の太陽電池。
- 各々のサブセルが、ほぼ同じ割合の太陽光子を吸収するためのものである請求項1記載の太陽電池。
- 複数のサブセルが三つのサブセルからなり、第一のサブセルが最も低い有効バンドギャップエネルギーを有し、第三のサブセルが最も高い有効バンドギャップエネルギーを有し、第二のサブセルが自己組織化量子ドット材料を含んでいる請求項4記載の太陽電池。
- 基板が、Ge又はGaAs基板であり、
第一のサブセルが、Geを含み、第一のサブセルの有効バンドギャップエネルギーが、約0.7eVであり、
第二のサブセルが、GaAs又はAlGaAs層とともに挿入されている(intercalated)複数のInGaAs量子ドット層を含み、第二のサブセルの有効バンドギャップエネルギーが、約1.16eVであり、
第三のサブセルが、GaInP、AlGaAs又はAlGaInPを含み、第三のサブセルの有効バンドギャップエネルギーが、約1.8eVである、
請求項6記載の太陽電池。 - 第一のサブセルが、エピタキシャルに成長した請求項7記載の太陽電池。
- 基板がGe基板であり、第一のサブセルが、基板の相互拡散部分である請求項7記載の太陽電池。
- 基板が、n型にドープされており、
第一、第二及び第三のサブセルが、各々、n−p又はn−i−p接合を含み、各接合のn側が、接合のp側よりも基板に近い、
請求項7記載の太陽電池。 - 基板が、p型にドープされており、
第一、第二及び第三のサブセルが、各々、p−n又はp−i−n接合を含み、各接合のp側が、接合のn側よりも基板に近い、
請求項7記載の太陽電池。 - 太陽電池の吸収特性を変えるため、サブセルのうちの一つが、ブラッグリフレクタ又は分布ブラッグリフレクタを備えている請求項1記載の太陽電池。
- 基板が、Ge又はGaAs基板であり、
複数のサブセルが、四つのサブセルからなり、
第一のサブセルが、約0.7eVの有効バンドギャップエネルギーを有し、
第二のサブセルが、約1.0eVの有効バンドギャップエネルギーを有し、
第三のサブセルが、約1.4eVの有効バンドギャップエネルギーを有し、
第四のサブセルが、約1.8eVの有効バンドギャップエネルギーを有する、
請求項4記載の太陽電池。 - 第一のサブセルが、Geを含み、
第二のサブセルが、GaAs又はAlGaAs層とともに挿入された複数のInGaAs量子ドット層を含み、
第三のサブセルが、GaAs又はAlGaAsを含み、
第四のサブセルが、GaInP又はAlGaAsを含む、
請求項13記載の太陽電池。 - 基板が、n型にドープされており、
第一、第二、第三及び第四のサブセルが、各々、n−p又はn−i−p接合を含み、各接合のn側が、接合のp側よりも基板に近い、
請求項14記載の太陽電池。 - 基板が、p型にドープされており、
第一、第二、第三及び第四のサブセルが、各々、p−n又はp−i−n接合を含み、各接合のp側が、接合のn側よりも基板に近い、
請求項14記載の太陽電池。 - 基板が、Ge又はGaAs基板であり、
複数のサブセルが、二つのサブセルからなり、第一のサブセルが自己組織化量子ドット層材料を含み、第二のサブセルが、約1.6eVの有効バンドギャップを有し、第一のサブセルの有効バンドギャップが、第二のサブセルの有効バンドギャップよりも小さい、
請求項4記載の太陽電池。 - 第一及び第二のサブセルが、ほぼ同じ割合の太陽光子を吸収するためのものである、請求項17記載の太陽電池。
- 自己組織化量子ドット層材料が、GaAs又はAlGaAs層とともに挿入された複数のInGaAs量子ドット層を含み、第二のサブセルの有効バンドギャップエネルギーが、約0.92eVであり、
第二のサブセルが、GaInPAs又はAlGaAsを含んでいる、
請求項18記載の太陽電池。 - 自己組織化量子ドット層材料が、GaAs又はAlGaAs層とともに挿入された複数のInGaAs量子ドット層を含み、第二のサブセルの有効バンドギャップエネルギーが、約0.92eVであり、
第二のサブセルが、AlGaAs層とともに挿入されたInAlAs量子ドットを有する自己組織化量子ドット層材料を含んでいる、
請求項18記載の太陽電池。 - 基板が、Ge又はGaAs基板であり、
複数のサブセルが、二つのサブセルからなり、第一のサブセルが、GaAs又はAlGaAs層とともに挿入された複数のInGaAs量子ドット層を有する自己組織化量子ドット層材料を含んでおり、第二のサブセルが、AlGaInP層とともに挿入された複数のInP量子ドット層を有する自己組織化量子ドット層材料を含んでいる、
請求項4記載の太陽電池。 - 基板が、Ge又はGaAs基板であり、
複数のサブセルが、二つのサブセルからなり、第一のサブセルが、Geを含み、第二のサブセルが、GaAs又はAlGaAs層とともに挿入された複数のInGaAs量子ドット層を有する自己組織化量子ドット層材料を含んでいる、
請求項4記載の太陽電池。 - 基板が、InP基板であり、
複数のサブセルが、二つのサブセルからなり、第一のサブセルが、InGaAs層とともに挿入された複数のInAs量子ドット層を有する自己組織化量子ドット層材料を含み、第二のサブセルが、AlGaInAs又はInAlAsPを含んでいる、
請求項4記載の太陽電池。 - 基板が、Si基板であり、
複数のサブセルが、二つのサブセルからなり、第一のサブセルが、Si層とともに挿入された複数のSiGe量子ドット層を有する自己組織化量子ドット層材料を含み、第二のサブセルが、GaP層とともに挿入された複数のInP量子ドット層を有する自己組織化量子ドット層材料を含んでいる、
請求項4記載の太陽電池。 - 基板が、バッファ層を有するSi基板であり、
複数のサブセルが、二つのサブセルからなり、第一のサブセルが、GaAs又はAlGaAs層とともに挿入された複数のInGaAs量子ドット層を有する自己組織化量子ドット層材料を含み、第二のサブセルが、AlGaAs又はGaAs層とともに挿入された複数のAlInAs量子ドット層を有する自己組織化量子ドット層材料を含んでいる、
請求項4記載の太陽電池。 - 基板が、バッファ層を有するSi基板であり、
複数のサブセルが、二つのサブセルからなり、第一のサブセルが、GaAs又はAlGaAs層とともに挿入された複数のInGaAs量子ドット層を有する自己組織化量子ドット層材料を含み、第二のサブセルが、GaInP層とともに挿入された複数のInGaAs量子ドット層を有する自己組織化量子ドット層材料を含んでいる、
請求項4記載の太陽電池。 - Si基板と、
Si基板上に変形して成長させた推移層であって、複数のGaAs及びAlGaAs層を含む推移層と、
推移層上にエピタキシャルに成長させた第一のサブセルであって、自己組織化量子ドット材料を含む第一のサブセルとを、備えた
モノリシック半導体光起電太陽電池。 - 第一のサブセルが、AlGaAs層とともに挿入された複数のInGaAs量子ドット層を含み、第一のサブセルの有効バンドギャップエネルギーが、約0.92eVである請求項27記載の太陽電池。
- 第一のサブセル上にエピタキシャルに成長させた第二のサブセルをさらに備え、第二のサブセルが、自己組織化量子ドット材料を含んでいる請求項27記載の太陽電池。
- 第二のサブセルが、AlGaAs層とともに挿入された複数のAlInAs量子ドット層を含み、第二のサブセルの有効バンドギャップエネルギーが、約1.6eVである請求項29記載の太陽電池。
- InP基板と、
基板上にエピタキシャルに成長させた第一のサブセルであって、InGaAs層とともに挿入された複数のInAs量子ドット層を含んでいる第一のサブセルとを備えたモノリシック半導体光起電太陽電池。 - 第一のサブセル上にエピタキシャルに成長させた第二のサブセルをさらに備え、第二のサブセルが、ドープされたAlInAsを含んでいる請求項31記載の太陽電池。
- バリアとともに挿入された複数の量子ドット層を有する自己組織化量子ドット材料をエピタキシャルに成長させることにより、量子ドットサブセルを形成する工程を含む、モノリシック多接合光起電太陽電池の製造方法。
- 基板が、導電性Ge基板であって、
さらに、基板上にGeサブセルをエピタキシャルに成長させることにより、又は基板の一部を相互拡散させることにより、基板上にGeサブセルを形成する工程と、
Geサブセルと量子ドットサブセルとの間にトンネル接合を形成する工程であって、量子ドットサブセルが、Geサブセル上に形成され、量子ドット層が、InGaAs量子ドットを含み、バリアがGaAs又はAlGaAsを含んでいる工程と、
量子ドットサブセル上にGaInP、AlGaAs又はAlGaInPをエピタキシャルに成長させることにより、GaInP、AlGaAs又はAlGaInPサブセルを形成する工程と、
量子ドットサブセルと、GaInP、AlGaAs又はAlGaInPサブセルとの間に、トンネル接合を形成する工程と、
基板上に第一の電気接点を、GaInP、AlGaAs又はAlGaInPサブセル上に第二の電気接点を形成する工程とを含む、
請求項33記載の方法。
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US10749058B2 (en) | 2015-06-11 | 2020-08-18 | University Of Florida Research Foundation, Incorporated | Monodisperse, IR-absorbing nanoparticles and related methods and devices |
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Also Published As
Publication number | Publication date |
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BRPI0506541A (pt) | 2007-02-27 |
EP1709690A4 (en) | 2009-03-11 |
AU2005205373A1 (en) | 2005-07-28 |
WO2005069387A1 (en) | 2005-07-28 |
CN100477289C (zh) | 2009-04-08 |
JP5248782B2 (ja) | 2013-07-31 |
JP2011223022A (ja) | 2011-11-04 |
CN1910759A (zh) | 2007-02-07 |
US20050155641A1 (en) | 2005-07-21 |
AU2005205373B9 (en) | 2010-06-03 |
WO2005069387A8 (en) | 2005-09-22 |
EP1709690A1 (en) | 2006-10-11 |
CA2551123A1 (en) | 2005-07-28 |
US20110067752A1 (en) | 2011-03-24 |
US7863516B2 (en) | 2011-01-04 |
AU2005205373B2 (en) | 2009-09-03 |
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