JP2010517299A - 光電池およびその作製方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
Description
本願は、2007年1月30日に出願された米国仮特許出願第60/887,212号(特許文献1)および2007年1月30日に出願された米国仮特許出願第60/887,206号(特許文献2)の利益を主張するものであり、両者はその全体が本願明細書において参照により援用されている。
Claims (32)
- 光電池であって、
第1の電極と、
第2の電極と、
第1の電極と第2の電極の間で、第1の電極および第2の電極に電気的に接触して位置する半導体ナノ結晶を含む光起電材料と、を備え、
前記半導体ナノ結晶は、
(a)光起電材料が太陽放射線による照射に応じて多重励起子効果を示すように、ピーク太陽放射線エネルギーより著しく小さいバンドギャップを有する半導体ナノ結晶、および
(b)半導体ナノ結晶の第1のセットと、前記第1のセットのナノ結晶とは異なるバンドギャップエネルギーを有する半導体ナノ結晶の第2のセットとを含む半導体ナノ結晶のうちの少なくとも1つを含み、
第1の電極から第2の電極への方向における光起電材料の幅は、約200nm未満であり、
光起電材料の幅に実質的に垂直な方向における光起電材料の高さは、少なくとも1ミクロンである光電池。 - 請求項1記載の光電池において、
入射太陽放射線の対象とする方向に実質的に垂直な方向における光起電材料の幅は、電荷キャリア再接合および散乱による電荷キャリアエネルギー損を実質的に防ぐのに十分に薄く、
入射太陽放射線の対象とする方向に実質的に平行な方向における光起電材料の高さは、50〜2,000nmの波長範囲内で光子の少なくとも90%を光電吸収するのに十分に厚い光電池。 - 請求項1記載の光電池において、
入射太陽放射線の対象とする方向に実質的に垂直な方向における光起電材料の幅は、第1の電極および第2の電極のうちの少なくとも1つに対する、光起電材料中の光生成された電荷キャリア飛行時間の間のフォノン生成を実質的に防ぐのに十分に薄く、
入射太陽放射線の対象とする方向に実質的に平行な方向における光起電材料の高さは、入射太陽放射線中の入射光子の少なくとも90%を電荷キャリアに変換するのに十分に厚い光電池。 - 請求項1記載の光電池において、
光起電材料の幅は、10〜20nmであり、
光起電材料の高さは、少なくとも2〜30ミクロンである光電池。 - 請求項1記載の光電池において、
第1の電極は、ナノロッドを含み、
光起電材料は、ナノロッドの少なくとも下部を囲み、
第2の電極は、光起電材料を囲んでナノコアックスを形成する光電池。 - 請求項5記載の光電池において、
ナノロッドは、カーボンナノチューブまたは導電性ナノワイヤを含む光電池。 - 請求項5記載の光電池において、
ナノロッドの上部は、光起電材料を超えて延在し、光電池用の光学アンテナを形成する光電池。 - 請求項1記載の光電池において、
ナノ結晶は、半導体ナノ結晶の第1のセットおよび第2のセットを含み、
第1のセットのナノ結晶は、第2のセットのナノ結晶とは異なる組成および異なる平均直径のうちの少なくとも1つを含む光電池。 - 請求項8記載の光電池において、
光起電材料は、ナノ結晶の第3のセットをさらに含み、
第3のセットのナノ結晶は、第1のセットおよび第2のセットのナノ結晶とは異なるバンドギャップエネルギーを有する光電池。 - 請求項8記載の光電池において、
少なくとも第1のセットのナノ結晶は、光起電材料が、太陽放射線による照射に応じて多重励起子効果を示すように、ピーク太陽放射線エネルギーより著しく小さいバンドギャップを有する光電池。 - 請求項1記載の光電池において、
ナノ結晶は、光起電材料が、太陽放射線による照射に応じて多重励起子効果を示すように、ピーク太陽放射線エネルギーより著しく小さいバンドギャップを有する光電池。 - 請求項11記載の光電池において、
ナノ結晶は、0.1eV〜0.8eVのバンドギャップを有する光電池。 - 請求項12記載の光電池において、
ナノ結晶は、Ge、SiGe、PbSe、PbTe、SnTe、SnSe、Bi2 Te3 、Sb2 Te3 、PbS、Bi2 Se3 、InAs、InSb、CdTe、CdSおよびCdSeからなる群から選択される光電池。 - 請求項1記載の光電池において、
PV電池は、PV電池のアレイの部分を含む光電池。 - 請求項1記載の光電池において、
ナノ結晶は、光学的に透明なポリマーまたは光学的に透明な無機酸化物マトリクス材料を含む光学的に透明なマトリクス材料内に位置する光電池。 - 請求項1記載の光電池において、
光起電材料は、第1の導電型の第1の半導体薄膜と、第1の導電型とは逆の第2の導電型の第2の半導体薄膜と、をさらに含み、
第1の半導体薄膜と第2の半導体薄膜とは、半導体ナノ結晶が第1の半導体薄膜と第2の半導体薄膜との間に位置するように位置付けされる光電池。 - 光電池であって、
第1の電極と、
第2の電極と、
第1の電極と第2の電極との間で第1の電極および第2の電極に電気的に接触して位置する半導体ナノ結晶を含む光起電材料と、を備え、
光起電材料は、半導体ナノ結晶の第1のセットおよび第2のセットを含み、
第1のセットのナノ結晶は、第2のセットのナノ結晶とは異なるバンドギャップエネルギーを有する光電池。 - 光電池であって、
第1の電極と、
第2の電極と、
第1の電極と第2の電極との間で第1の電極および第2の電極に電気的に接触して位置する光起電材料と、を備え、
光起電材料は、バルク無機半導体材料、ポリマー光活性材料、有機分子光活性材料または生体光活性材料を含み、
光起電材料は、太陽放射線による照射に応じてキャリア増倍効果を示し、
第1の電極から第2の電極への方向における光起電材料の幅は、200nm未満であり、
光起電材料の幅に実質的に垂直な方向における光起電材料の高さは、少なくとも1ミクロンである光電池。 - 光電池を作製する方法であって、
第1の電極を形成するステップと、
第2の電極を形成するステップと、
第1の電極と第2の電極との間で第1の電極および第2の電極に電気的に接触して位置する半導体ナノ結晶を含む光起電材料を形成するステップと、を含み、
前記半導体ナノ結晶は、
(a)光起電材料が太陽放射線による照射に応じて多重励起子効果を示すように、ピーク太陽放射線エネルギーより著しく小さいバンドギャップを有する半導体ナノ結晶、および
(b)半導体ナノ結晶の第1のセットと、第1のセットのナノ結晶とは異なるバンドギャップエネルギーを有する半導体ナノ結晶の第2のセットとを含む半導体ナノ結晶のうちの少なくとも1つを含み、
第1の電極から第2の電極への方向における光起電材料の幅は、約200nm未満であり、
光起電材料の幅に実質的に垂直な方向における光起電材料の高さは、少なくとも1ミクロンである方法。 - 請求項19に記載の方法において、
基材に垂直な第1の電極を形成するステップと、
第1の電極のまわりに光起電材料を形成するステップと、
光起電材料のまわりに第2の電極を形成するステップと、
をさらに含む方法。 - 請求項20記載の方法において、
前記光起電材料を形成するステップは、ナノロッド状の第1の電極のまわりに蒸着技術を使用して、20nm未満の幅を有する少なくとも1つの連続半導体フィルムを蒸着してナノ結晶からなる光起電材料を形成するステップを含む方法。 - 請求項20記載の方法において、
前記光起電材料を形成するステップは、半導体ナノ結晶を準備し、その後、準備された半導体ナノ結晶をナノロッド状の第1の電極の少なくとも下部に取り付けるステップを含む方法。 - 請求項20記載の方法において、
前記光起電材料を形成するステップは、
半導体ナノ結晶を準備するステップと、
準備された半導体ナノ結晶を光学的に透明なポリマーマトリクス中に設置するステップと、
ナノロッド状の第1の電極のまわりに半導体ナノ結晶を含むポリマーマトリクスを蒸着するステップと、
を含む方法。 - 請求項20記載の方法において、
前記光起電材料を形成するステップは、
(a)ナノロッド状の第1の電極の下部のまわりに第1の透明酸化物層を蒸着するステップと、
(b)透明酸化物を覆って半導体ナノ結晶を蒸着するステップと、
(c)蒸着された半導体ナノ結晶を覆って第2の透明酸化物層を蒸着するステップと、 を含む方法。 - 請求項19記載の方法において、
第1の電極、第2の電極、および光起電材料は、移動する導電性基材上に蒸着される方法。 - 請求項25記載の方法において、
基材上に光電池のアレイを形成するステップをさらに含む方法。 - 請求項26記載の方法において、
ウェブ状の導電性基材を第1のリールから第2のリールに巻くステップと、
導電性基材上に複数の金属触媒粒子を形成するステップと、
金属触媒粒子から複数のナノロッド状の第1の電極を成長させるステップと、
第1の電極のまわりに光起電材料を形成するステップと、
光起電材料のまわりに複数の第2の電極を形成するステップと、
をさらに含む方法。 - 請求項19記載の方法において、
ナノ結晶は、半導体ナノ結晶の第1のセットおよび第2のセットを含み、
第1のセットのナノ結晶は、第2のセットのナノ結晶とは異なる組成および異なる平均直径のうちの少なくとも1つを含む方法。 - 請求項18記載の方法において、
ナノ結晶は、光起電材料が太陽放射線による照射に応じて多重励起子効果を示すように、ピーク太陽放射線エネルギーより著しく小さいバンドギャップを有する方法。 - 第1の電極と、第2の電極と、第1の電極と第2の電極との間で第1の電極および第2の電極に電気的に接触して位置する光起電材料と、を含む光電池を操作する方法において、
光電池を、第1の方向に伝搬する入射太陽放射線にさらすステップと、
光起電材料がキャリア増倍効果を示すように、前記さらすステップに応じて光電池から電流を生成するステップと、を含み、
入射太陽放射線の対象とする方向に実質的に垂直な方向における光起電材料の幅は、(a)第1の電極および第2の電極のうちの少なくとも1つに対する、光起電材料中の光生成された電荷キャリア飛行時間の間のフォノン生成を実質的に防ぐこと、および(b)電荷キャリア再接合および散乱による電荷キャリアエネルギー損を実質的に防ぐことのうちの少なくとも1つを行うのに十分に薄く、
入射太陽放射線の対象とする方向に実質的に平行な方向における光起電材料の高さは、(a)入射太陽放射線中の入射光子の少なくとも90%を電荷キャリアに変換すること、および(b)50〜2,000nmの波長範囲内で光子の少なくとも90%を光電吸収することのうちの少なくとも1つを行うのに十分に厚い方法。 - 請求項30記載の方法において、
光起電材料は、半導体ナノ結晶の第1のセットおよび第2のセットを含み、
第1のセットのナノ結晶は、第2のセットのナノ結晶とは異なるバンドギャップエネルギーを有する方法。 - 請求項30記載の方法において、
光起電材料は、光起電材料が前記さらすステップに応じて多重励起子効果を示すように、ピーク太陽放射線エネルギーより著しく小さいバンドギャップを有する半導体ナノ結晶を含み、
光起電材料の幅は、約200nm未満であり、
光起電材料の高さは、少なくとも1ミクロンである方法。
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WO2008094517A1 (en) | 2008-08-07 |
EP2115782A1 (en) | 2009-11-11 |
TW200845404A (en) | 2008-11-16 |
CN101627479A (zh) | 2010-01-13 |
US20080178924A1 (en) | 2008-07-31 |
CN101627479B (zh) | 2011-06-15 |
KR20090117881A (ko) | 2009-11-13 |
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