FR2435816A1 - Procede de realisation, par epitaxie, d'un dispositif semi-conducteur a structure multicouches et application de ce procede - Google Patents
Procede de realisation, par epitaxie, d'un dispositif semi-conducteur a structure multicouches et application de ce procedeInfo
- Publication number
- FR2435816A1 FR2435816A1 FR7825861A FR7825861A FR2435816A1 FR 2435816 A1 FR2435816 A1 FR 2435816A1 FR 7825861 A FR7825861 A FR 7825861A FR 7825861 A FR7825861 A FR 7825861A FR 2435816 A1 FR2435816 A1 FR 2435816A1
- Authority
- FR
- France
- Prior art keywords
- producing
- application
- epitaxy
- semiconductor device
- layered structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000407 epitaxy Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 210000002858 crystal cell Anatomy 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02466—Antimonides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02549—Antimonides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
- H01L29/221—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds including two or more compounds, e.g. alloys
- H01L29/225—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/938—Lattice strain control or utilization
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Procédé de réalisation, sur un substrat d'un composé binaire, de couches de composés ternaires et quaternaires, des lits de composition intermédiaire séparant le substrat de la couche terminale. Procédé caractérisé en ce que les accroissements relatifs des dimensions des mailles cristallines dans les lits intermédiaires successifs sont compris entre deux chiffres limites. Application à la réalisation de dispositifs opto-électroniques, notamment de diodes électroluminescentes.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7825861A FR2435816A1 (fr) | 1978-09-08 | 1978-09-08 | Procede de realisation, par epitaxie, d'un dispositif semi-conducteur a structure multicouches et application de ce procede |
CA334,763A CA1134060A (fr) | 1978-09-08 | 1979-08-30 | Fabrication d'un semiconducteur multicouche par epitaxie |
DE19792934994 DE2934994A1 (de) | 1978-09-08 | 1979-08-30 | Verfahren zur epitaktischen herstellung einer halbleiteranordnung mit mehrschichtenstruktur und anwendung dieses verfahrens |
US06/072,257 US4274890A (en) | 1978-09-08 | 1979-09-04 | Method for the epitaxial manufacture of a semiconductor device having a multi-layer structure |
GB7930696A GB2030767B (en) | 1978-09-08 | 1979-09-05 | P-n device having an epitaxial multilayer structure |
IT25506/79A IT1123552B (it) | 1978-09-08 | 1979-09-05 | Metodo per fabbricare epitassialmente un dispositivo semiconduttore presentante una struttura a piu'strati e applicazione di tale metodo |
JP11434679A JPS5538096A (en) | 1978-09-08 | 1979-09-07 | Method of manufacturing epitaxial of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7825861A FR2435816A1 (fr) | 1978-09-08 | 1978-09-08 | Procede de realisation, par epitaxie, d'un dispositif semi-conducteur a structure multicouches et application de ce procede |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2435816A1 true FR2435816A1 (fr) | 1980-04-04 |
FR2435816B1 FR2435816B1 (fr) | 1982-04-16 |
Family
ID=9212457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7825861A Granted FR2435816A1 (fr) | 1978-09-08 | 1978-09-08 | Procede de realisation, par epitaxie, d'un dispositif semi-conducteur a structure multicouches et application de ce procede |
Country Status (7)
Country | Link |
---|---|
US (1) | US4274890A (fr) |
JP (1) | JPS5538096A (fr) |
CA (1) | CA1134060A (fr) |
DE (1) | DE2934994A1 (fr) |
FR (1) | FR2435816A1 (fr) |
GB (1) | GB2030767B (fr) |
IT (1) | IT1123552B (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4319937A (en) * | 1980-11-12 | 1982-03-16 | University Of Illinois Foundation | Homogeneous liquid phase epitaxial growth of heterojunction materials |
US4517047A (en) * | 1981-01-23 | 1985-05-14 | The United States Of America As Represented By The Secretary Of The Army | MBE growth technique for matching superlattices grown on GaAs substrates |
JPH0650723B2 (ja) * | 1984-10-17 | 1994-06-29 | 日本電気株式会社 | エピタキシヤル成長方法 |
JPS61172381A (ja) * | 1984-12-22 | 1986-08-04 | Fujitsu Ltd | InP系化合物半導体装置 |
US4548658A (en) * | 1985-01-30 | 1985-10-22 | Cook Melvin S | Growth of lattice-graded epilayers |
IL78840A0 (en) * | 1985-10-17 | 1986-09-30 | Holobeam | Lattice-graded epilayer |
US5326716A (en) * | 1986-02-11 | 1994-07-05 | Max Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. | Liquid phase epitaxial process for producing three-dimensional semiconductor structures by liquid phase expitaxy |
FR2595509B1 (fr) * | 1986-03-07 | 1988-05-13 | Thomson Csf | Composant en materiau semiconducteur epitaxie sur un substrat a parametre de maille different et application a divers composants en semiconducteurs |
JPH01117728A (ja) * | 1987-10-30 | 1989-05-10 | Masatoshi Shinozaki | 根無しもやしの製造方法 |
GB2213634B (en) * | 1987-12-08 | 1992-03-18 | Third Generation Technology Li | Photocathode structures |
US5264070A (en) * | 1990-10-09 | 1993-11-23 | Motorola, Inc. | Method of growth-orientation of a crystal on a device using an oriented seed layer |
DE19947020B4 (de) * | 1999-09-30 | 2006-02-23 | Infineon Technologies Ag | Kompensationsbauelement mit variabler Ladungsbilanz und dessen Herstellungsverfahren |
DE102005047152A1 (de) | 2005-09-30 | 2007-04-12 | Osram Opto Semiconductors Gmbh | Epitaxiesubstrat, Verfahren zu seiner Herstellung und Verfahren zur Herstellung eines Halbleiterchips |
US8159791B2 (en) | 2008-02-06 | 2012-04-17 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetoresistive sensor having quantum well structure and a trapping layer for preventing charge carrier migration |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4032951A (en) * | 1976-04-13 | 1977-06-28 | Bell Telephone Laboratories, Incorporated | Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses |
EP0000638A1 (fr) * | 1977-07-14 | 1979-02-07 | Western Electric Company, Incorporated | Dispositif comprenant des couches épitaxiales en matériaux cristallins dissimilaires |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3982261A (en) * | 1972-09-22 | 1976-09-21 | Varian Associates | Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices |
US3958263A (en) * | 1973-11-12 | 1976-05-18 | Bell Telephone Laboratories, Incorporated | Stress reduction in algaas-algaasp multilayer structures |
US3962716A (en) * | 1973-11-12 | 1976-06-08 | Bell Telephone Laboratories, Incorporated | Reduction of dislocations in multilayer structures of zinc-blend materials |
US3963538A (en) * | 1974-12-17 | 1976-06-15 | International Business Machines Corporation | Two stage heteroepitaxial deposition process for GaP/Si |
US3995303A (en) * | 1975-06-05 | 1976-11-30 | Bell Telephone Laboratories, Incorporated | Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector |
-
1978
- 1978-09-08 FR FR7825861A patent/FR2435816A1/fr active Granted
-
1979
- 1979-08-30 CA CA334,763A patent/CA1134060A/fr not_active Expired
- 1979-08-30 DE DE19792934994 patent/DE2934994A1/de active Granted
- 1979-09-04 US US06/072,257 patent/US4274890A/en not_active Expired - Lifetime
- 1979-09-05 GB GB7930696A patent/GB2030767B/en not_active Expired
- 1979-09-05 IT IT25506/79A patent/IT1123552B/it active
- 1979-09-07 JP JP11434679A patent/JPS5538096A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4032951A (en) * | 1976-04-13 | 1977-06-28 | Bell Telephone Laboratories, Incorporated | Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses |
US4072544A (en) * | 1976-04-13 | 1978-02-07 | Bell Telephone Laboratories, Incorporated | Growth of III-V layers containing arsenic, antimony and phosphorus |
EP0000638A1 (fr) * | 1977-07-14 | 1979-02-07 | Western Electric Company, Incorporated | Dispositif comprenant des couches épitaxiales en matériaux cristallins dissimilaires |
Also Published As
Publication number | Publication date |
---|---|
CA1134060A (fr) | 1982-10-19 |
GB2030767B (en) | 1983-03-02 |
FR2435816B1 (fr) | 1982-04-16 |
IT1123552B (it) | 1986-04-30 |
IT7925506A0 (it) | 1979-09-05 |
DE2934994C2 (fr) | 1989-07-20 |
US4274890A (en) | 1981-06-23 |
DE2934994A1 (de) | 1980-03-20 |
GB2030767A (en) | 1980-04-10 |
JPS5745055B2 (fr) | 1982-09-25 |
JPS5538096A (en) | 1980-03-17 |
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Legal Events
Date | Code | Title | Description |
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CA | Change of address | ||
CD | Change of name or company name | ||
ST | Notification of lapse |