ES2086297T3 - Elemento fotovoltaico con capa semiconductora que comprende un material de cristal no unico que contiene como minimo zn, se y h en una cantidad de 1 a 4% atomico. - Google Patents

Elemento fotovoltaico con capa semiconductora que comprende un material de cristal no unico que contiene como minimo zn, se y h en una cantidad de 1 a 4% atomico.

Info

Publication number
ES2086297T3
ES2086297T3 ES88306720T ES88306720T ES2086297T3 ES 2086297 T3 ES2086297 T3 ES 2086297T3 ES 88306720 T ES88306720 T ES 88306720T ES 88306720 T ES88306720 T ES 88306720T ES 2086297 T3 ES2086297 T3 ES 2086297T3
Authority
ES
Spain
Prior art keywords
atoms
atomic
photovoltaic element
material containing
layer including
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES88306720T
Other languages
English (en)
Inventor
Katsumi Nakagawa
Masahiro Kanai
Shunichi Ishihara
Kozo Arao
Yasushi Fujioka
Akira Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62179927A external-priority patent/JPS6424471A/ja
Priority claimed from JP62205917A external-priority patent/JPS6448469A/ja
Priority claimed from JP62205916A external-priority patent/JPS6448468A/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of ES2086297T3 publication Critical patent/ES2086297T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02963—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

UN ELEMENTO FOTOVOLTAICO QUE GENERA FUERZA FOTOELECTROMOTRIZ MEDIANTE LA CONEXION DE UNA CAPA SEMICONDUCTORA TIPO-P Y OTRA TIPO-N, CARACTERIZADO PORQUE POR LO MENOS UNA DE DICHAS CAPAS ESTA HECHA DE UNA PELICULA DEPOSITADA, COMPUESTA DE ATOMOS DE ZN, SE, OPCIONALMENTE TE, Y POR LO MENOS H, CONTENIENDO DICHA PELICULA DEPOSITADA UN AGENTE DOPANTE TIPO-P O TIPO-N, QUE CONTIENE 1-4 % EN ATOMOS DE ATOMOS DE H, QUE CONTIENEN ATOMOS DE SE Y DE TE EN LA RELACION 1:9-3:7 (EN TERMINOS DE NUMERO DE ATOMOS), Y QUE TAMBIEN TIENE GRANOS EN UNA RELACION DE 65-85 % EN VOLUMEN POR UNIDAD DE VOLUMEN.
ES88306720T 1987-07-21 1988-07-21 Elemento fotovoltaico con capa semiconductora que comprende un material de cristal no unico que contiene como minimo zn, se y h en una cantidad de 1 a 4% atomico. Expired - Lifetime ES2086297T3 (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62179927A JPS6424471A (en) 1987-07-21 1987-07-21 Photosensor
JP62205917A JPS6448469A (en) 1987-08-19 1987-08-19 Photovoltaic cell
JP62205916A JPS6448468A (en) 1987-08-19 1987-08-19 Photovoltaic cell

Publications (1)

Publication Number Publication Date
ES2086297T3 true ES2086297T3 (es) 1996-07-01

Family

ID=27324779

Family Applications (1)

Application Number Title Priority Date Filing Date
ES88306720T Expired - Lifetime ES2086297T3 (es) 1987-07-21 1988-07-21 Elemento fotovoltaico con capa semiconductora que comprende un material de cristal no unico que contiene como minimo zn, se y h en una cantidad de 1 a 4% atomico.

Country Status (7)

Country Link
US (1) US4959106A (es)
EP (1) EP0300799B1 (es)
AT (1) ATE135849T1 (es)
AU (1) AU622617B2 (es)
CA (1) CA1303194C (es)
DE (1) DE3855119T2 (es)
ES (1) ES2086297T3 (es)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6424468A (en) * 1987-07-21 1989-01-26 Canon Kk Functional deposited film
JPS6436086A (en) * 1987-07-31 1989-02-07 Canon Kk Functional deposition film
EP0301903A3 (en) * 1987-07-31 1990-07-11 Canon Kabushiki Kaisha Functional znse1-xtex: h deposited film
US4888062A (en) * 1987-08-31 1989-12-19 Canon Kabushiki Kaisha Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic %
DE3854114T2 (de) * 1987-11-20 1995-11-16 Canon Kk Photovoltaisches PIN-Bauelement mit einer P- oder N-Halbleiterschicht aus nicht einkristallinem Stoff, welches Zn, Se, Te, H in einer Menge von 1 bis 4 Atom % und ein Dotierelement enthält und eine I-Halbleiterschicht aus nicht einkristallinem Si(H,F).
US4926229A (en) * 1987-11-20 1990-05-15 Canon Kabushiki Kaisha Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material
JP2846651B2 (ja) * 1989-03-31 1999-01-13 三洋電機株式会社 光起電力装置
US5573601A (en) * 1989-10-17 1996-11-12 Canon Kabushiki Kaisha Pin amorphous silicon photovoltaic element with counter-doped intermediate layer
US5051786A (en) * 1989-10-24 1991-09-24 Mcnc Passivated polycrystalline semiconductors quantum well/superlattice structures fabricated thereof
JP2693032B2 (ja) * 1990-10-16 1997-12-17 キヤノン株式会社 半導体層の形成方法及びこれを用いる太陽電池の製造方法
US5284525A (en) * 1990-12-13 1994-02-08 Canon Kabushiki Kaisha Solar cell
JP2918345B2 (ja) * 1991-02-20 1999-07-12 キヤノン株式会社 光起電力素子
US5274269A (en) * 1991-05-15 1993-12-28 Minnesota Mining And Manufacturing Company Ohmic contact for p-type group II-IV compound semiconductors
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
US5291507A (en) * 1991-05-15 1994-03-01 Minnesota Mining And Manufacturing Company Blue-green laser diode
CN1119358A (zh) * 1991-05-15 1996-03-27 明尼苏达州采矿制造公司 蓝-绿激光二极管
JP2974485B2 (ja) * 1992-02-05 1999-11-10 キヤノン株式会社 光起電力素子の製造法
JP2771414B2 (ja) * 1992-12-28 1998-07-02 キヤノン株式会社 太陽電池の製造方法
US5557146A (en) * 1993-07-14 1996-09-17 University Of South Florida Ohmic contact using binder paste with semiconductor material dispersed therein
EP0684652B1 (en) * 1994-05-19 2005-11-09 Canon Kabushiki Kaisha Photovoltaic element, electrode structure thereof, and process for producing the same
US5628829A (en) * 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5665640A (en) * 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5975912A (en) * 1994-06-03 1999-11-02 Materials Research Corporation Low temperature plasma-enhanced formation of integrated circuits
WO1995034092A1 (en) * 1994-06-03 1995-12-14 Materials Research Corporation A method of nitridization of titanium thin films
EP1388597B1 (en) * 2001-04-04 2013-02-13 Nippon Mining & Metals Co., Ltd. METHOD FOR MANUFACTURING n-type ZnTe COMPOUND SEMICONDUCTOR SINGLE CRYSTAL ON A ZNTE SUBSTRATE AND SEMICONDUCTOR DEVICE
KR100786855B1 (ko) * 2001-08-24 2007-12-20 삼성에스디아이 주식회사 강유전체를 이용한 태양전지
WO2009045293A2 (en) * 2007-09-25 2009-04-09 First Solar, Inc. Photovoltaic devices including an interfacial layer
KR101608953B1 (ko) * 2007-11-09 2016-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치 및 그 제조 방법
US20090139558A1 (en) * 2007-11-29 2009-06-04 Shunpei Yamazaki Photoelectric conversion device and manufacturing method thereof
EP2075850A3 (en) * 2007-12-28 2011-08-24 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and manufacturing method thereof
EP2105972A3 (en) 2008-03-28 2015-06-10 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and method for manufacturing the same
US7842534B2 (en) 2008-04-02 2010-11-30 Sunlight Photonics Inc. Method for forming a compound semi-conductor thin-film
US8742531B2 (en) * 2008-12-08 2014-06-03 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Electrical devices including dendritic metal electrodes
JP5470633B2 (ja) 2008-12-11 2014-04-16 国立大学法人東北大学 光電変換素子及び太陽電池
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
US20140166107A1 (en) * 2012-12-13 2014-06-19 Intermolecular, Inc. Back-Contact Electron Reflectors Enhancing Thin Film Solar Cell Efficiency
US9698285B2 (en) 2013-02-01 2017-07-04 First Solar, Inc. Photovoltaic device including a P-N junction and method of manufacturing
US11876140B2 (en) * 2013-05-02 2024-01-16 First Solar, Inc. Photovoltaic devices and method of making
CN104183663B (zh) 2013-05-21 2017-04-12 第一太阳能马来西亚有限公司 光伏器件及其制备方法
US10062800B2 (en) 2013-06-07 2018-08-28 First Solar, Inc. Photovoltaic devices and method of making
KR20150142094A (ko) * 2014-06-10 2015-12-22 에스케이이노베이션 주식회사 원자층 증착법으로 형성된 버퍼층을 포함하는 태양전지 및 이의 제조방법
US10529883B2 (en) 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing
WO2019180854A1 (ja) * 2018-03-20 2019-09-26 株式会社 東芝 多接合型太陽電池モジュール及び太陽光発電システム

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226898A (en) 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
JPS5752176A (en) * 1980-09-16 1982-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device
US4596645A (en) * 1984-10-23 1986-06-24 California Institute Of Technology Reactively-sputtered zinc semiconductor films of high conductivity for heterojunction devices
JPH0691112B2 (ja) 1985-02-18 1994-11-14 キヤノン株式会社 堆積膜形成法
JPS61189649A (ja) 1985-02-18 1986-08-23 Canon Inc 堆積膜形成法
IN167516B (es) * 1986-05-06 1990-11-10 Standard Oil Co Ohio
JPS6424468A (en) * 1987-07-21 1989-01-26 Canon Kk Functional deposited film
JPS6436086A (en) * 1987-07-31 1989-02-07 Canon Kk Functional deposition film
EP0301903A3 (en) 1987-07-31 1990-07-11 Canon Kabushiki Kaisha Functional znse1-xtex: h deposited film

Also Published As

Publication number Publication date
DE3855119D1 (de) 1996-04-25
EP0300799B1 (en) 1996-03-20
AU1926488A (en) 1989-01-27
EP0300799A2 (en) 1989-01-25
ATE135849T1 (de) 1996-04-15
AU622617B2 (en) 1992-04-16
EP0300799A3 (en) 1990-07-25
DE3855119T2 (de) 1996-10-17
CA1303194C (en) 1992-06-09
US4959106A (en) 1990-09-25

Similar Documents

Publication Publication Date Title
ES2086297T3 (es) Elemento fotovoltaico con capa semiconductora que comprende un material de cristal no unico que contiene como minimo zn, se y h en una cantidad de 1 a 4% atomico.
DE3855090D1 (de) Photovoltaisches PIN-Bauelement mit einer I-Halbleiterschicht aus ZnSe oder ZnSeTe die Wasserstoff in einer Menge von 1 bis 4 Atom-% enthält
ATE131660T1 (de) Dünnschichtsolarzelle mit räumlich modulierter intrinsischer schicht
EP0300798A3 (en) Functional znse:h deposited films
FR2432765B1 (es)
JPS6436086A (en) Functional deposition film
ATE124169T1 (de) Photovoltaisches pin-bauelement, tandem-und triple-zellen.
ES2073406T3 (es) Elemento fotovoltaico con union pin con una capa semiconductora de tipo p o de tipo n que comprende un material que no es de cristal unico conteniendo zn, se, te, h en una cantidad de 1 a 4 atomico % y un contaminante y una capa semicondcutora de tipo i comprendiendo un material
JPS56152276A (en) Solar cell made of amorphous silicon thin film
DE69124824D1 (de) Lichtempfindliches Element mit einer amorphen Silicium-photoleitfähigen Schicht, die Fluoratome in einer Menge von 1 bis 95 Atom-ppm enthält
JPS53138290A (en) Sintered-film solar battery of cadmium telluride
EP0301903A3 (en) Functional znse1-xtex: h deposited film
JPS5762053A (en) Photoconductive member
JPS6448469A (en) Photovoltaic cell
JPS644083A (en) Photovoltaic device
EP0310353A3 (en) High gain thin film sensor
JPS6448468A (en) Photovoltaic cell
JPS64773A (en) Photovoltaic element
JPS6424471A (en) Photosensor
JPS5688374A (en) Evaporated thin film diode
GB1131740A (en) Semi-conductor devices
JPS5261984A (en) Production of photoelectric converting device
KR790000382B1 (en) Photoconductive image pickup tube target
JPS53111290A (en) Production of visible light semiconductor light emitting element
GB1057992A (en) Improvements in semiconductor injection recombination radiation sources

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 300799

Country of ref document: ES