ES2073406T3 - Elemento fotovoltaico con union pin con una capa semiconductora de tipo p o de tipo n que comprende un material que no es de cristal unico conteniendo zn, se, te, h en una cantidad de 1 a 4 atomico % y un contaminante y una capa semicondcutora de tipo i comprendiendo un material - Google Patents
Elemento fotovoltaico con union pin con una capa semiconductora de tipo p o de tipo n que comprende un material que no es de cristal unico conteniendo zn, se, te, h en una cantidad de 1 a 4 atomico % y un contaminante y una capa semicondcutora de tipo i comprendiendo un materialInfo
- Publication number
- ES2073406T3 ES2073406T3 ES88310921T ES88310921T ES2073406T3 ES 2073406 T3 ES2073406 T3 ES 2073406T3 ES 88310921 T ES88310921 T ES 88310921T ES 88310921 T ES88310921 T ES 88310921T ES 2073406 T3 ES2073406 T3 ES 2073406T3
- Authority
- ES
- Spain
- Prior art keywords
- type
- semiconductor layer
- type semiconductor
- atomic
- photovoltaic element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 title 2
- 239000000356 contaminant Substances 0.000 title 1
- 239000011521 glass Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
- H01L31/076—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02963—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
UN ELEMENTO FOTOVOLTAICO DE UNION POR REMACHE, QUE PRODUCE ENERGIA FOTOELECTROMOTRIZ POR UNION DE UNA CAPA SEMICONDUCTORA TIPO P, UNA CAPA SEMICONDUCTORA TIPO I Y OTRA TIPO N, CARACTERIZADO PORQUE POR LO MENOS UNA DE DICHAS CAPAS SEMICONDUCTORAS TIPOS P Y N TIENE UNA PELICULA TIPO P O N DE ZNSE1-XTEX:H:M, DONDE M ES UN DOPANTE TIPO P O N; LA RELACION CUANTITATIVA DE SE A TE ESTA EN EL INTERVALO DE 1:9 A 3:7 EN TERMINOS DE RELACION ATOMICA, LA CANTIDAD DE HIDROGENO ESTA ENTRE 1 Y 4 % EN ATOMOS; Y DICHA PELICULA CONTIENE CAMPOS DE GRANO CRISTALINO EN PROPORCION DE 65-85 % EN VOLUMEN POR UNIDAD DE VOLUMEN; Y DICHA CAPA DE SEMICONDUCTOR TIPO I TIENE UNA PELICULA DE CRISTAL NO SENCILLO DE SI(C, GE) (H, F).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29168487 | 1987-11-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2073406T3 true ES2073406T3 (es) | 1995-08-16 |
Family
ID=17772074
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES88310921T Expired - Lifetime ES2073406T3 (es) | 1987-11-20 | 1988-11-18 | Elemento fotovoltaico con union pin con una capa semiconductora de tipo p o de tipo n que comprende un material que no es de cristal unico conteniendo zn, se, te, h en una cantidad de 1 a 4 atomico % y un contaminante y una capa semicondcutora de tipo i comprendiendo un material |
Country Status (7)
Country | Link |
---|---|
US (1) | US5008726A (es) |
EP (1) | EP0317343B1 (es) |
AT (1) | ATE124805T1 (es) |
AU (1) | AU629187B2 (es) |
CA (1) | CA1298639C (es) |
DE (1) | DE3854114T2 (es) |
ES (1) | ES2073406T3 (es) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5510644A (en) * | 1992-03-23 | 1996-04-23 | Martin Marietta Corporation | CDTE x-ray detector for use at room temperature |
US5628829A (en) * | 1994-06-03 | 1997-05-13 | Materials Research Corporation | Method and apparatus for low temperature deposition of CVD and PECVD films |
WO1995034092A1 (en) * | 1994-06-03 | 1995-12-14 | Materials Research Corporation | A method of nitridization of titanium thin films |
US5975912A (en) * | 1994-06-03 | 1999-11-02 | Materials Research Corporation | Low temperature plasma-enhanced formation of integrated circuits |
US5665640A (en) * | 1994-06-03 | 1997-09-09 | Sony Corporation | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
US6147391A (en) * | 1996-05-07 | 2000-11-14 | The Regents Of The University Of California | Semiconductor hetero-interface photodetector |
US6074892A (en) | 1996-05-07 | 2000-06-13 | Ciena Corporation | Semiconductor hetero-interface photodetector |
JP4171428B2 (ja) * | 2003-03-20 | 2008-10-22 | 三洋電機株式会社 | 光起電力装置 |
EP1780800A3 (en) * | 2005-11-01 | 2007-07-11 | Fujifilm Corporation | Photoconductive layer forming radiation image taking panel and radiation image taking panel |
US20100044675A1 (en) * | 2008-08-21 | 2010-02-25 | Seagate Technology Llc | Photovoltaic Device With an Up-Converting Quantum Dot Layer |
US8927852B2 (en) * | 2008-08-21 | 2015-01-06 | Seagate Technology Llc | Photovoltaic device with an up-converting quantum dot layer and absorber |
WO2010077622A1 (en) * | 2008-12-08 | 2010-07-08 | Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University | Electrical devices including dendritic metal electrodes |
US8840799B2 (en) | 2011-12-01 | 2014-09-23 | Toyota Motor Engineering & Manufacturing North America, Inc. | Binary thermoelectric material containing nanoparticles and process for producing the same |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6047752B2 (ja) * | 1975-08-20 | 1985-10-23 | 松下電器産業株式会社 | 擦像管タ−ゲット |
US4105478A (en) * | 1977-01-06 | 1978-08-08 | Honeywell, Inc. | Doping hgcdte with li |
US4087293A (en) * | 1977-01-06 | 1978-05-02 | Honeywell Inc. | Silicon as donor dopant in Hg1-x Cdx Te |
US4105477A (en) * | 1977-01-06 | 1978-08-08 | Honeywell, Inc. | Doping of (hg,cd)te with a group va element |
US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
US4345107A (en) * | 1979-06-18 | 1982-08-17 | Ametek, Inc. | Cadmium telluride photovoltaic cells |
JPS56137684A (en) * | 1980-03-31 | 1981-10-27 | Ricoh Co Ltd | Photoelectric transducing element |
JPS6037076B2 (ja) * | 1980-06-11 | 1985-08-23 | 潤一 西澤 | 3−6族化合物半導体の温度液相成長法 |
JPS5752176A (en) * | 1980-09-16 | 1982-03-27 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
US4525687A (en) * | 1983-02-28 | 1985-06-25 | At&T Bell Laboratories | High speed light modulator using multiple quantum well structures |
JPS61120480A (ja) * | 1984-11-16 | 1986-06-07 | Hitachi Ltd | 光電変換装置 |
AU622617B2 (en) * | 1987-07-21 | 1992-04-16 | Canon Kabushiki Kaisha | Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least Zn, Se and in an amount of 1 to 40 atomic per cent |
JPS6424468A (en) * | 1987-07-21 | 1989-01-26 | Canon Kk | Functional deposited film |
US4888062A (en) * | 1987-08-31 | 1989-12-19 | Canon Kabushiki Kaisha | Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic % |
-
1988
- 1988-11-18 CA CA000583511A patent/CA1298639C/en not_active Expired - Lifetime
- 1988-11-18 DE DE3854114T patent/DE3854114T2/de not_active Expired - Fee Related
- 1988-11-18 EP EP88310921A patent/EP0317343B1/en not_active Expired - Lifetime
- 1988-11-18 ES ES88310921T patent/ES2073406T3/es not_active Expired - Lifetime
- 1988-11-18 US US07/273,070 patent/US5008726A/en not_active Expired - Lifetime
- 1988-11-18 AT AT88310921T patent/ATE124805T1/de not_active IP Right Cessation
- 1988-11-21 AU AU25786/88A patent/AU629187B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
EP0317343A3 (en) | 1990-07-11 |
AU629187B2 (en) | 1992-10-01 |
CA1298639C (en) | 1992-04-07 |
AU2578688A (en) | 1989-05-25 |
DE3854114D1 (de) | 1995-08-10 |
US5008726A (en) | 1991-04-16 |
EP0317343B1 (en) | 1995-07-05 |
EP0317343A2 (en) | 1989-05-24 |
DE3854114T2 (de) | 1995-11-16 |
ATE124805T1 (de) | 1995-07-15 |
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Legal Events
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FG2A | Definitive protection |
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