ES2084583T3 - Elemento fotovoltaico con union pin, en el que la semiconductora de tipo i esta formada a base de znse o znsete que contiene 1-4% de hidrogeno atomico - Google Patents

Elemento fotovoltaico con union pin, en el que la semiconductora de tipo i esta formada a base de znse o znsete que contiene 1-4% de hidrogeno atomico

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Publication number
ES2084583T3
ES2084583T3 ES88308068T ES88308068T ES2084583T3 ES 2084583 T3 ES2084583 T3 ES 2084583T3 ES 88308068 T ES88308068 T ES 88308068T ES 88308068 T ES88308068 T ES 88308068T ES 2084583 T3 ES2084583 T3 ES 2084583T3
Authority
ES
Spain
Prior art keywords
photovoltaic element
semiconductor layer
type semiconductor
atoms
znse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES88308068T
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English (en)
Inventor
Katsumi Nakagawa
Masahiro Kanai
Shunichi Ishihara
Kozo Arao
Yasushi Fujioka
Akira Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of ES2084583T3 publication Critical patent/ES2084583T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02963—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

UN ELEMENTO FOTOVOLTAICO DE UNION POR CONTACTO MEJORADA, QUE PRODUCE FUERZA FOTOELECTROMOTRIZ POR LA UNION DE UNA CAPA DE SEMICONDUCTOR TIPO P, UNA CAPA DE SEMICONDUCTOR TIPO I, Y UNA CAPA DE SEMICONDUCTOR TIPO N, CARACTERIZADO PORQUE POR LO MENOS DICHA CAPA DE SEMICONDUCTOR TIPO I CONTIENE UN ELEMENTO ELEGIDO DEL GRUPO QUE CONSTA DE UNA PELICULA DEPOSITADA DE ZNSE:H, QUE CONTIENE LOS ATOMOS DE HIDROGENO EN CANTIDAD DE 1-4 % EN ATOMOS Y LOS CAMPOS DEL GRANO CRISTALINO EN UNA PROPORCION DE 65-85 % EN VOLUMEN POR UNIDAD DE VOLUMEN Y UNA PELICULA DEPOSITADA DE ZNSE1-XTEX:H, QUE CONTIENE LOS ATOMOS DE HIDROGENO EN CANTIDAD DE 1-4 % Y LOS CAMPOS DE GRANO CRISTALINO EN UNA PROPORCION DE 65-85 % EN VOLUMEN POR UNIDAD DE VOLUMEN, Y CONTENIENDO TAMBIEN LOS ATOMOS DE SE Y DE TE EN UNA RELACION CUANTITATIVA SE/TE DE 1:9 A 3:7 EN NUMERO DE ATOMOS. EL ELEMENTO FOTOVOLTAICO DE UNION POR CONTACTO PRESENTA UNA MEJORADA EFICACIA DE CONVERSION FOTOELECTRICA PARA LA LUZ DE CORTA LONGITUD DE ONDA Y TIENEUNA TENSION A CIRCUITO ABIERTO ELEVADA. EL ELEMENTO FOTOVOLTAICO DE UNION POR CONTACTO NO ES CAUSA DE FATIGA ALGUNA INDUCIDA POR LA LUZ NO DESEABLE AUN DESPUES DE USO CONTINUO DURANTE UN LARGO PERIODO DE TIEMPO.
ES88308068T 1987-08-31 1988-08-31 Elemento fotovoltaico con union pin, en el que la semiconductora de tipo i esta formada a base de znse o znsete que contiene 1-4% de hidrogeno atomico Expired - Lifetime ES2084583T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21749287 1987-08-31
JP24985687 1987-10-05

Publications (1)

Publication Number Publication Date
ES2084583T3 true ES2084583T3 (es) 1996-05-16

Family

ID=26522048

Family Applications (1)

Application Number Title Priority Date Filing Date
ES88308068T Expired - Lifetime ES2084583T3 (es) 1987-08-31 1988-08-31 Elemento fotovoltaico con union pin, en el que la semiconductora de tipo i esta formada a base de znse o znsete que contiene 1-4% de hidrogeno atomico

Country Status (7)

Country Link
US (1) US4888062A (es)
EP (1) EP0306297B1 (es)
AT (1) ATE135497T1 (es)
AU (1) AU610231B2 (es)
CA (1) CA1311547C (es)
DE (1) DE3855090T2 (es)
ES (1) ES2084583T3 (es)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6424468A (en) * 1987-07-21 1989-01-26 Canon Kk Functional deposited film
EP0301903A3 (en) * 1987-07-31 1990-07-11 Canon Kabushiki Kaisha Functional znse1-xtex: h deposited film
CA1298639C (en) * 1987-11-20 1992-04-07 Katsumi Nakagawa Pinjunction photovoltaic element with p or n-type semiconductor layercomprising non-single crystal material containing zn, se, te, h in anamount of 1 to 4 atomic % and a dopant and i-type semiconductor layer comprising non-single crystal si(h,f) material
US4926229A (en) * 1987-11-20 1990-05-15 Canon Kabushiki Kaisha Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material
JP2717583B2 (ja) * 1988-11-04 1998-02-18 キヤノン株式会社 積層型光起電力素子
US5665640A (en) * 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
WO1995034092A1 (en) * 1994-06-03 1995-12-14 Materials Research Corporation A method of nitridization of titanium thin films
US5975912A (en) * 1994-06-03 1999-11-02 Materials Research Corporation Low temperature plasma-enhanced formation of integrated circuits
US5628829A (en) * 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
JPH11289103A (ja) * 1998-02-05 1999-10-19 Canon Inc 半導体装置および太陽電池モジュ―ル及びその解体方法
US6248122B1 (en) * 1999-02-26 2001-06-19 Vascular Architects, Inc. Catheter with controlled release endoluminal prosthesis
KR100343949B1 (ko) * 2000-01-26 2002-07-24 한국과학기술연구원 상온에서 작동하는 자외선 수광, 발광소자용 ＺｎＯ박막의 제조 방법 및 그를 위한 장치
KR100366349B1 (ko) * 2001-01-03 2002-12-31 삼성에스디아이 주식회사 태양 전지 및 그의 제조 방법
US6914467B2 (en) * 2003-12-04 2005-07-05 International Business Machines Corporation Dual edge programmable delay unit
EP1840916A1 (en) * 2006-03-27 2007-10-03 IVF Industriforskning och Utveckling AB A sealed monolithic photo-electrochemical system and a method for manufacturing a sealed monolithic photo-electrochemical system
US20110041898A1 (en) * 2009-08-19 2011-02-24 Emcore Solar Power, Inc. Back Metal Layers in Inverted Metamorphic Multijunction Solar Cells
KR20100021045A (ko) * 2008-08-14 2010-02-24 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
US8742531B2 (en) * 2008-12-08 2014-06-03 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Electrical devices including dendritic metal electrodes
JP5508542B2 (ja) * 2010-10-07 2014-06-04 グエラテクノロジー株式会社 二次電池
KR101727204B1 (ko) * 2010-10-07 2017-04-14 구엘라 테크놀로지 가부시키가이샤 태양 전지
WO2012173778A2 (en) * 2011-06-16 2012-12-20 3M Innovative Properties Company Booster films for solar photovoltaic systems
CN104025329B (zh) * 2011-10-30 2017-07-04 日本麦可罗尼克斯股份有限公司 可反复充放电的量子电池
JP2015149389A (ja) * 2014-02-06 2015-08-20 ルネサスエレクトロニクス株式会社 半導体発光素子およびその製造方法
EP3538033B1 (en) 2016-11-10 2022-08-03 Medtronic Vascular Inc. Drug-filled stents to prevent vessel micro-injuries and methods of manufacture thereof
CN113506842B (zh) * 2021-07-09 2023-07-25 安徽华晟新能源科技有限公司 异质结太阳能电池的制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5752176A (en) * 1980-09-16 1982-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device
US4596645A (en) * 1984-10-23 1986-06-24 California Institute Of Technology Reactively-sputtered zinc semiconductor films of high conductivity for heterojunction devices
CA1303194C (en) * 1987-07-21 1992-06-09 Katsumi Nakagawa Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least zn, se and h in an amount of 1 to40 atomic %
JPS6424468A (en) * 1987-07-21 1989-01-26 Canon Kk Functional deposited film
JPS6436086A (en) * 1987-07-31 1989-02-07 Canon Kk Functional deposition film

Also Published As

Publication number Publication date
EP0306297A3 (en) 1990-06-13
AU2167488A (en) 1989-03-02
ATE135497T1 (de) 1996-03-15
EP0306297A2 (en) 1989-03-08
CA1311547C (en) 1992-12-15
US4888062A (en) 1989-12-19
DE3855090T2 (de) 1996-10-17
EP0306297B1 (en) 1996-03-13
AU610231B2 (en) 1991-05-16
DE3855090D1 (de) 1996-04-18

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