JPS6448468A - Photovoltaic cell - Google Patents

Photovoltaic cell

Info

Publication number
JPS6448468A
JPS6448468A JP62205916A JP20591687A JPS6448468A JP S6448468 A JPS6448468 A JP S6448468A JP 62205916 A JP62205916 A JP 62205916A JP 20591687 A JP20591687 A JP 20591687A JP S6448468 A JPS6448468 A JP S6448468A
Authority
JP
Japan
Prior art keywords
atoms
deposited film
range
ratio
hydrogen atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62205916A
Other languages
Japanese (ja)
Inventor
Masahiro Kanai
Katsumi Nakagawa
Shunichi Ishihara
Tsutomu Murakami
Kozo Arao
Yasushi Fujioka
Akira Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP62205916A priority Critical patent/JPS6448468A/en
Priority to CA000572580A priority patent/CA1303194C/en
Priority to AU19264/88A priority patent/AU622617B2/en
Priority to DE3855119T priority patent/DE3855119T2/en
Priority to EP88306720A priority patent/EP0300799B1/en
Priority to ES88306720T priority patent/ES2086297T3/en
Priority to AT88306720T priority patent/ATE135849T1/en
Publication of JPS6448468A publication Critical patent/JPS6448468A/en
Priority to US07/399,396 priority patent/US4959106A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a high photoelectric transfer efficiency which is especially effective for a light with short wavelength, by specifying both the content ratio of Se to Te and the content of hydrogen atoms in a ZnSe1-xTex film, and by forming a deposited film in which the ratio of crystal grains per unit volume is controlled to the specific values. CONSTITUTION:A one semiconductor layer is composed of a deposited film which comprises zinc atoms, selenium atoms, tellurium atoms and at least hydrogen atoms, and contains group I or V elements in the periodic table as a p type dopant, with the content ratio of selenium atoms to tellurium atoms being specified in the range of 1:9-3:7, by number of atoms, hydrogen atoms being contained in the range of 1-4 atomic percentage, and the ratio of crystal grains per unit volume being specified in the range of 65-85 percent by volume. And, the other semiconductor layer is composed of a deposited film which is represented by the general formula: ZnA in which A represents oxygen atom, sulfur atom or the like, or a deposited film of ZnTe, ZnSe1-yTey (0<y<1) or CdTe. Accordingly, the cell with p-n junction employs these two films, which results in a desired photoelectromotive force being generated.
JP62205916A 1987-07-21 1987-08-19 Photovoltaic cell Pending JPS6448468A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP62205916A JPS6448468A (en) 1987-08-19 1987-08-19 Photovoltaic cell
CA000572580A CA1303194C (en) 1987-07-21 1988-07-20 Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least zn, se and h in an amount of 1 to40 atomic %
AU19264/88A AU622617B2 (en) 1987-07-21 1988-07-20 Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least Zn, Se and in an amount of 1 to 40 atomic per cent
DE3855119T DE3855119T2 (en) 1987-07-21 1988-07-21 Photovoltaic component with a semiconductor layer made of non-single-crystalline material, which contains at least Zn, Se and H in an amount of 1 to 4 atom%
EP88306720A EP0300799B1 (en) 1987-07-21 1988-07-21 Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least Zn,Se and H in an amount of 1 to 4 atomic %
ES88306720T ES2086297T3 (en) 1987-07-21 1988-07-21 PHOTOVOLTAIC ELEMENT WITH A SEMICONDUCTIVE LAYER INCLUDING A NON-UNIQUE GLASS MATERIAL CONTAINING AT LEAST ZN, SE AND H IN A QUANTITY OF 1 TO 4% ATOMIC.
AT88306720T ATE135849T1 (en) 1987-07-21 1988-07-21 PHOTOVOLTAIC COMPONENT HAVING A SEMICONDUCTOR LAYER MADE OF NON-SINGLE CRYSTALLINE MATERIAL WHICH CONTAINS AT LEAST ZN, SE AND H IN AN AMOUNT OF 1 TO 4 ATOMS
US07/399,396 US4959106A (en) 1987-07-21 1989-08-28 Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic %

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62205916A JPS6448468A (en) 1987-08-19 1987-08-19 Photovoltaic cell

Publications (1)

Publication Number Publication Date
JPS6448468A true JPS6448468A (en) 1989-02-22

Family

ID=16514871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62205916A Pending JPS6448468A (en) 1987-07-21 1987-08-19 Photovoltaic cell

Country Status (1)

Country Link
JP (1) JPS6448468A (en)

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