ES2131081T3 - Dispositivo fotovoltaico con union pin que tiene una capa semiconductora a-sige de tipo i con un punto maximo para el contenido de ge. - Google Patents

Dispositivo fotovoltaico con union pin que tiene una capa semiconductora a-sige de tipo i con un punto maximo para el contenido de ge.

Info

Publication number
ES2131081T3
ES2131081T3 ES93106028T ES93106028T ES2131081T3 ES 2131081 T3 ES2131081 T3 ES 2131081T3 ES 93106028 T ES93106028 T ES 93106028T ES 93106028 T ES93106028 T ES 93106028T ES 2131081 T3 ES2131081 T3 ES 2131081T3
Authority
ES
Spain
Prior art keywords
type
semiconductor layer
type semiconductor
layer
single crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES93106028T
Other languages
English (en)
Inventor
Koichi Matsuda
Masafumi Sano
Tsutomu Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of ES2131081T3 publication Critical patent/ES2131081T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
    • H01L31/03765—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System including AIVBIV compounds or alloys, e.g. SiGe, SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the graded gap type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Abstract

SE DESCRIBE UN DISPOSITIVO FOTOVOLTAICO QUE COMPRENDE UN SUSTRATO Y UNA REGION LAMINAR ACTIVA SEMICONDUCTORA DE CLAVIJA DE UNION DISPUESTA SOBRE EL SUSTRATO.LA REGION LAMINAR COMPRENDE UNA LAMINA SEMICONDUCTORA TIPO-P (115) COMPUESTA DE UN MATERIAL SEMICONDUCTOR CRISTALINO NO-UNICO TIPO-P,UNA LAMINA SEMICONDUCTORA TIPO-I COMPUESTA DE UN MATERIAL SEMICONDUCTOR CRISTALINO NO-UNICO TIPO-I, Y UNA LAMINA SEMICONDUCTORA TIPO-N (103) COMPUESTA DE UN MATERIAL SEMICONDUCTOR CRISTALINO NO-UNICO TIPO-N; Y SE CARACTERIZA POR (A) UNA LAMINA SEPARADORA (118)QUE COMPRENDE UN MATERIAL SEMICONDUCTOR DE SILICONA CRISTALINA NO-UNICO CON APENAS ATOMOS DE GERMANIO SE INTERPONE ENTRE LAS LAMINAS SEMICONDUCTORAS TIPO-P Y TIPO-I,(B) UNA LAMINA SEPARADORA (117)QUE COMPRENDE UN MATERIAL SEMICONDUCTOR DE SILICONA CRISTALINA NO-UNICO CON APENAS ATOMOS DE GERMANIO SE INTERPONE ENTRE LAS LAMINAS TIPO-I TIPO-N, Y LA LAMINA TIPOI ESTA FORMADA POR UN MATERIAL SEMICONDUCTOR DE SILICONA DE GERMANIO AMORFA CON UN 20 A UN 70%DE ATOMOS DE GERMANIO SOBRE LA REGION COMPLETA,DONDE LA DISTRIBUCION DE LOS ATOMOS DE GERMANIO EN LA DIRECCION DE GROSOR VARIA MIENTRAS SE PROVEE UN PUNTO DE CONCENTRACION MAXIMO
ES93106028T 1992-04-15 1993-04-14 Dispositivo fotovoltaico con union pin que tiene una capa semiconductora a-sige de tipo i con un punto maximo para el contenido de ge. Expired - Lifetime ES2131081T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11984392 1992-04-15
JP5085105A JP2951146B2 (ja) 1992-04-15 1993-03-22 光起電力デバイス

Publications (1)

Publication Number Publication Date
ES2131081T3 true ES2131081T3 (es) 1999-07-16

Family

ID=26426131

Family Applications (1)

Application Number Title Priority Date Filing Date
ES93106028T Expired - Lifetime ES2131081T3 (es) 1992-04-15 1993-04-14 Dispositivo fotovoltaico con union pin que tiene una capa semiconductora a-sige de tipo i con un punto maximo para el contenido de ge.

Country Status (8)

Country Link
US (1) US5324364A (es)
EP (1) EP0566972B1 (es)
JP (1) JP2951146B2 (es)
KR (1) KR0132552B1 (es)
AT (1) ATE178432T1 (es)
AU (1) AU656067B2 (es)
DE (1) DE69324183T2 (es)
ES (1) ES2131081T3 (es)

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US5429685A (en) * 1992-11-16 1995-07-04 Canon Kabushiki Kaisha Photoelectric conversion element and power generation system using the same
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AU695669B2 (en) * 1994-05-19 1998-08-20 Canon Kabushiki Kaisha Photovoltaic element, electrode structure thereof, and process for producing the same
US5716480A (en) * 1995-07-13 1998-02-10 Canon Kabushiki Kaisha Photovoltaic device and method of manufacturing the same
JP3025179B2 (ja) * 1995-09-28 2000-03-27 キヤノン株式会社 光電変換素子の形成方法
KR100251070B1 (ko) 1996-08-28 2000-04-15 미다라이 후지오 광기전력 소자
JPH1154773A (ja) 1997-08-01 1999-02-26 Canon Inc 光起電力素子及びその製造方法
WO2003007049A1 (en) 1999-10-05 2003-01-23 Iridigm Display Corporation Photonic mems and structures
US6521883B2 (en) * 2000-07-18 2003-02-18 Sanyo Electric Co., Ltd. Photovoltaic device
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US7122736B2 (en) * 2001-08-16 2006-10-17 Midwest Research Institute Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique
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JP2004129483A (ja) * 2002-08-08 2004-04-22 Canon Inc 電力変換装置および発電装置
JP4171428B2 (ja) * 2003-03-20 2008-10-22 三洋電機株式会社 光起電力装置
JP2005171271A (ja) * 2003-12-08 2005-06-30 Canon Inc 堆積膜の形成方法、それを用いた光起電力素子の製造方法
US20070295383A1 (en) * 2006-03-31 2007-12-27 Intematix Corporation Wavelength-converting phosphors for enhancing the efficiency of a photovoltaic device
TWI401809B (zh) * 2006-03-31 2013-07-11 Intematix Corp 具有增強之轉換效率之光伏打裝置及波長轉換器及其方法
US9741901B2 (en) * 2006-11-07 2017-08-22 Cbrite Inc. Two-terminal electronic devices and their methods of fabrication
JP2011508430A (ja) * 2007-12-21 2011-03-10 クォルコム・メムズ・テクノロジーズ・インコーポレーテッド 多接合光起電力セル
TWI514595B (zh) * 2008-09-24 2015-12-21 Semiconductor Energy Lab 光電轉換裝置及其製造方法
JP4764469B2 (ja) * 2008-10-31 2011-09-07 三菱重工業株式会社 光電変換装置及び光電変換装置の製造方法
WO2010077622A1 (en) * 2008-12-08 2010-07-08 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Electrical devices including dendritic metal electrodes
TWI379430B (en) * 2009-04-16 2012-12-11 Atomic Energy Council A method of fabricating a thin interface for internal light reflection and impurities isolation
KR101072472B1 (ko) * 2009-07-03 2011-10-11 한국철강 주식회사 광기전력 장치의 제조 방법
JP2011222929A (ja) * 2010-03-23 2011-11-04 Toshiba Corp 不揮発性記憶装置及びその製造方法
CN103210500A (zh) * 2010-11-16 2013-07-17 夏普株式会社 半导体装置的制造方法
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Also Published As

Publication number Publication date
AU656067B2 (en) 1995-01-19
JP2951146B2 (ja) 1999-09-20
KR0132552B1 (ko) 1998-04-16
DE69324183T2 (de) 1999-10-28
US5324364A (en) 1994-06-28
EP0566972A1 (en) 1993-10-27
DE69324183D1 (de) 1999-05-06
JPH0621494A (ja) 1994-01-28
KR930022620A (ko) 1993-11-24
AU3690293A (en) 1993-10-21
ATE178432T1 (de) 1999-04-15
EP0566972B1 (en) 1999-03-31

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