GB886232A - Improvements relating to the formation of p-n junctions in semi-conductor material - Google Patents

Improvements relating to the formation of p-n junctions in semi-conductor material

Info

Publication number
GB886232A
GB886232A GB1207057A GB1207057A GB886232A GB 886232 A GB886232 A GB 886232A GB 1207057 A GB1207057 A GB 1207057A GB 1207057 A GB1207057 A GB 1207057A GB 886232 A GB886232 A GB 886232A
Authority
GB
United Kingdom
Prior art keywords
type
junctions
antimony
compounds
indium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1207057A
Inventor
Douglas Richard Chick
Stanley Ernest Hunt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1194374D priority Critical patent/FR1194374A/fr
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to GB1207057A priority patent/GB886232A/en
Publication of GB886232A publication Critical patent/GB886232A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Abstract

886,232. Semiconductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. April 11, 1958 [April 12, 1957], No. 12070/57. Class 37. [Also in Group XL (a)] PN junctions for use in rectifiers and transistors are made by bombarding the surface of a body of material of one conductivity type with protons to transmute some of the atoms of the material in the surface layer to atoms of an impurity characteristic of the opposite conductivity type. For instance a junction may be formed in P-type germanium, preferably <SP>74</SP>Ge, by conversion of some of the <SP>74</SP>Ge in the surface to <SP>75</SP>As. Junctions may also be produced in silicon, in compounds of aluminium, gallium or indium with phosphorus, arsenic or antimony, compounds of bismuth or antimony with selenium or tellurium, and in cadmium sulphide and selenide. In these compounds the surface layer of P-type bodies is converted to N-type by transmuting the higher valency element of the compound into the next element of higher atomic number, and the surface of N-type bodies into P type by transmuting the lower valency element into the next element of lower atomic number. In this way a junction is formed in P-type indium antimonide by transmutation of antimony to tellurium with emission of gamma radiation and in N-type indium antimonide by transmutation of indium to cadmium with the emission of alpha particles. The junctions are formed within a few thousandths of an inch of the surface on account of the short range of protons in the material. The bodies may be annealed after bombardment to remove lattice deformations.
GB1207057A 1957-04-12 1957-04-12 Improvements relating to the formation of p-n junctions in semi-conductor material Expired GB886232A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1194374D FR1194374A (en) 1957-04-12
GB1207057A GB886232A (en) 1957-04-12 1957-04-12 Improvements relating to the formation of p-n junctions in semi-conductor material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1207057A GB886232A (en) 1957-04-12 1957-04-12 Improvements relating to the formation of p-n junctions in semi-conductor material

Publications (1)

Publication Number Publication Date
GB886232A true GB886232A (en) 1962-01-03

Family

ID=9997895

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1207057A Expired GB886232A (en) 1957-04-12 1957-04-12 Improvements relating to the formation of p-n junctions in semi-conductor material

Country Status (2)

Country Link
FR (1) FR1194374A (en)
GB (1) GB886232A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967982A (en) * 1974-07-15 1976-07-06 Siemens Aktiengesellschaft Method of doping a semiconductor layer
US4278475A (en) * 1979-01-04 1981-07-14 Westinghouse Electric Corp. Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967982A (en) * 1974-07-15 1976-07-06 Siemens Aktiengesellschaft Method of doping a semiconductor layer
US4278475A (en) * 1979-01-04 1981-07-14 Westinghouse Electric Corp. Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation

Also Published As

Publication number Publication date
FR1194374A (en) 1959-11-09

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