GB751408A - Semi-conductor devices and method of making same - Google Patents

Semi-conductor devices and method of making same

Info

Publication number
GB751408A
GB751408A GB12152/54A GB1215254A GB751408A GB 751408 A GB751408 A GB 751408A GB 12152/54 A GB12152/54 A GB 12152/54A GB 1215254 A GB1215254 A GB 1215254A GB 751408 A GB751408 A GB 751408A
Authority
GB
United Kingdom
Prior art keywords
antimony
junctions
indium
mixture
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB12152/54A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB751408A publication Critical patent/GB751408A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

751,408. Coating with metals. RADIO CORPORATION OF AMERICA. April 27, 1954 [May 25, 1953], No. 12152/54. Class 82(2). [Also in Group XXXVI] A body consisting of a mixture of acceptor and donor material is fused to a semiconductor body of one conductivity type, to produce a succession of PN junctions. Fig. 2 shows a P type germanium body 3 on which a pellet 14<SP>1</SP> of indium and antimony has been heated at 600‹-700‹C. for five minutes in a non-oxidising atmosphere to diffuse the impurities into the germanium. The proportion of indium to antimony may vary between 1 : 9 and 9: 1. This results in the formation of an N type region 20 and a P type region 16 so that two PN junctions are formed. The difference in segregation coefficient has the greater effect at temperatures below about 700‹C., while the diffusion coefficient difference is predominant at about 850‹C. In place of indium and antimony, the mixture may consist of thallium and antimony, or bismuth and thallium, or in the case of an N-type body, of gallium and antimony, gallium and arsenic or aluminium and antimony. The spacing between the two PN junctions may be controlled by varying the heating and for relative proportions of the impurities materials of the mixture.
GB12152/54A 1953-05-25 1954-04-27 Semi-conductor devices and method of making same Expired GB751408A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US751408XA 1953-05-25 1953-05-25

Publications (1)

Publication Number Publication Date
GB751408A true GB751408A (en) 1956-06-27

Family

ID=22123818

Family Applications (1)

Application Number Title Priority Date Filing Date
GB12152/54A Expired GB751408A (en) 1953-05-25 1954-04-27 Semi-conductor devices and method of making same

Country Status (2)

Country Link
FR (1) FR1103544A (en)
GB (1) GB751408A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2836523A (en) * 1956-08-02 1958-05-27 Bell Telephone Labor Inc Manufacture of semiconductive devices
US2899343A (en) * 1954-05-27 1959-08-11 Jsion
US2938819A (en) * 1958-06-27 1960-05-31 Ibm Intermetallic semiconductor device manufacturing
US2943006A (en) * 1957-05-06 1960-06-28 Westinghouse Electric Corp Diffused transistors and processes for making the same
US2973290A (en) * 1956-07-05 1961-02-28 Gen Electric Co Ltd Production of semi-conductor bodies by impurity diffusion through station ary interface
US2977256A (en) * 1956-08-16 1961-03-28 Gen Electric Semiconductor devices and methods of making same
DE1116829B (en) * 1960-06-08 1961-11-09 Telefunken Patent Method for manufacturing a semiconductor device
US3029170A (en) * 1955-09-02 1962-04-10 Gen Electric Co Ltd Production of semi-conductor bodies
US3111611A (en) * 1957-09-24 1963-11-19 Ibm Graded energy gap semiconductor devices
DE1170082B (en) * 1960-03-25 1964-05-14 Western Electric Co Method for manufacturing semiconductor components
DE1233495B (en) * 1960-02-24 1967-02-02 Nippon Telegraph & Telephone Process for the production of tunnel diodes
DE1260032B (en) * 1962-05-14 1968-02-01 Rca Corp Process for forming a rectifying barrier layer in a semiconductor wafer
DE1289190B (en) * 1956-08-10 1969-02-13 Philips Nv Process for the production of a semiconducting barrier system as well as a semiconducting barrier system

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1105522B (en) * 1958-11-12 1961-04-27 Licentia Gmbh Transistor with a disk-shaped semiconductor body

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2899343A (en) * 1954-05-27 1959-08-11 Jsion
US3029170A (en) * 1955-09-02 1962-04-10 Gen Electric Co Ltd Production of semi-conductor bodies
US2973290A (en) * 1956-07-05 1961-02-28 Gen Electric Co Ltd Production of semi-conductor bodies by impurity diffusion through station ary interface
US2836523A (en) * 1956-08-02 1958-05-27 Bell Telephone Labor Inc Manufacture of semiconductive devices
DE1289190B (en) * 1956-08-10 1969-02-13 Philips Nv Process for the production of a semiconducting barrier system as well as a semiconducting barrier system
US2977256A (en) * 1956-08-16 1961-03-28 Gen Electric Semiconductor devices and methods of making same
US2943006A (en) * 1957-05-06 1960-06-28 Westinghouse Electric Corp Diffused transistors and processes for making the same
US3111611A (en) * 1957-09-24 1963-11-19 Ibm Graded energy gap semiconductor devices
US2938819A (en) * 1958-06-27 1960-05-31 Ibm Intermetallic semiconductor device manufacturing
DE1233495B (en) * 1960-02-24 1967-02-02 Nippon Telegraph & Telephone Process for the production of tunnel diodes
DE1170082B (en) * 1960-03-25 1964-05-14 Western Electric Co Method for manufacturing semiconductor components
DE1116829B (en) * 1960-06-08 1961-11-09 Telefunken Patent Method for manufacturing a semiconductor device
DE1260032B (en) * 1962-05-14 1968-02-01 Rca Corp Process for forming a rectifying barrier layer in a semiconductor wafer

Also Published As

Publication number Publication date
FR1103544A (en) 1955-11-03

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