ATE135497T1 - Photovoltaisches pin-bauelement mit einer i- halbleiterschicht aus znse oder znsete die wasserstoff in einer menge von 1 bis 4 atom- - Google Patents

Photovoltaisches pin-bauelement mit einer i- halbleiterschicht aus znse oder znsete die wasserstoff in einer menge von 1 bis 4 atom-

Info

Publication number
ATE135497T1
ATE135497T1 AT88308068T AT88308068T ATE135497T1 AT E135497 T1 ATE135497 T1 AT E135497T1 AT 88308068 T AT88308068 T AT 88308068T AT 88308068 T AT88308068 T AT 88308068T AT E135497 T1 ATE135497 T1 AT E135497T1
Authority
AT
Austria
Prior art keywords
semiconductor layer
atoms
type semiconductor
amount
znse
Prior art date
Application number
AT88308068T
Other languages
English (en)
Inventor
Katsumi Nakagawa
Masahiro Kanai
Shunichi Ishihara
Kozo Arao
Yasushi Fujioka
Akira Sakai
Tsutomu Murakami
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE135497T1 publication Critical patent/ATE135497T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02963—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
AT88308068T 1987-08-31 1988-08-31 Photovoltaisches pin-bauelement mit einer i- halbleiterschicht aus znse oder znsete die wasserstoff in einer menge von 1 bis 4 atom- ATE135497T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21749287 1987-08-31
JP24985687 1987-10-05

Publications (1)

Publication Number Publication Date
ATE135497T1 true ATE135497T1 (de) 1996-03-15

Family

ID=26522048

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88308068T ATE135497T1 (de) 1987-08-31 1988-08-31 Photovoltaisches pin-bauelement mit einer i- halbleiterschicht aus znse oder znsete die wasserstoff in einer menge von 1 bis 4 atom-

Country Status (7)

Country Link
US (1) US4888062A (de)
EP (1) EP0306297B1 (de)
AT (1) ATE135497T1 (de)
AU (1) AU610231B2 (de)
CA (1) CA1311547C (de)
DE (1) DE3855090T2 (de)
ES (1) ES2084583T3 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6424468A (en) * 1987-07-21 1989-01-26 Canon Kk Functional deposited film
EP0301903A3 (de) * 1987-07-31 1990-07-11 Canon Kabushiki Kaisha Funktionelle niedergeschlagene ZnSe1-xTeX: H-Schicht
US4926229A (en) * 1987-11-20 1990-05-15 Canon Kabushiki Kaisha Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material
ES2073406T3 (es) * 1987-11-20 1995-08-16 Canon Kk Elemento fotovoltaico con union pin con una capa semiconductora de tipo p o de tipo n que comprende un material que no es de cristal unico conteniendo zn, se, te, h en una cantidad de 1 a 4 atomico % y un contaminante y una capa semicondcutora de tipo i comprendiendo un material
JP2717583B2 (ja) * 1988-11-04 1998-02-18 キヤノン株式会社 積層型光起電力素子
US5975912A (en) * 1994-06-03 1999-11-02 Materials Research Corporation Low temperature plasma-enhanced formation of integrated circuits
WO1995034092A1 (en) * 1994-06-03 1995-12-14 Materials Research Corporation A method of nitridization of titanium thin films
US5665640A (en) * 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5628829A (en) * 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
JPH11289103A (ja) * 1998-02-05 1999-10-19 Canon Inc 半導体装置および太陽電池モジュ―ル及びその解体方法
US6248122B1 (en) * 1999-02-26 2001-06-19 Vascular Architects, Inc. Catheter with controlled release endoluminal prosthesis
KR100343949B1 (ko) * 2000-01-26 2002-07-24 한국과학기술연구원 상온에서 작동하는 자외선 수광, 발광소자용 ＺｎＯ박막의 제조 방법 및 그를 위한 장치
KR100366349B1 (ko) * 2001-01-03 2002-12-31 삼성에스디아이 주식회사 태양 전지 및 그의 제조 방법
US6914467B2 (en) * 2003-12-04 2005-07-05 International Business Machines Corporation Dual edge programmable delay unit
EP1840916A1 (de) * 2006-03-27 2007-10-03 IVF Industriforskning och Utveckling AB Versiegeltes monolithisches photo-elektrochemisches System und Verfahren zur Herstellung versiegelter monolithischer photo-elektrochemischer Systeme
US20110041898A1 (en) * 2009-08-19 2011-02-24 Emcore Solar Power, Inc. Back Metal Layers in Inverted Metamorphic Multijunction Solar Cells
KR20100021045A (ko) * 2008-08-14 2010-02-24 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
WO2010077622A1 (en) * 2008-12-08 2010-07-08 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Electrical devices including dendritic metal electrodes
EP2626910B1 (de) * 2010-10-07 2019-02-20 Guala Technology Co., Ltd. Photovoltaische zelle
KR101605765B1 (ko) * 2010-10-07 2016-03-24 구엘라 테크놀로지 가부시키가이샤 이차 전지
JP2014519718A (ja) * 2011-06-16 2014-08-14 スリーエム イノベイティブ プロパティズ カンパニー ソーラー光起電システムのためのブースター被膜
CA2853599C (en) * 2011-10-30 2017-07-04 Kabushiki Kaisha Nihon Micronics Repeatedly chargeable and dischargeable quantum battery
JP2015149389A (ja) * 2014-02-06 2015-08-20 ルネサスエレクトロニクス株式会社 半導体発光素子およびその製造方法
CN109922760B (zh) 2016-11-10 2022-03-04 美敦力瓦斯科尔勒公司 用于防止血管微损伤的药物填充支架及其制造方法
CN113506842B (zh) * 2021-07-09 2023-07-25 安徽华晟新能源科技有限公司 异质结太阳能电池的制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5752176A (en) * 1980-09-16 1982-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device
US4596645A (en) * 1984-10-23 1986-06-24 California Institute Of Technology Reactively-sputtered zinc semiconductor films of high conductivity for heterojunction devices
JPS6424468A (en) * 1987-07-21 1989-01-26 Canon Kk Functional deposited film
CA1303194C (en) * 1987-07-21 1992-06-09 Katsumi Nakagawa Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least zn, se and h in an amount of 1 to40 atomic %
JPS6436086A (en) * 1987-07-31 1989-02-07 Canon Kk Functional deposition film

Also Published As

Publication number Publication date
EP0306297A2 (de) 1989-03-08
EP0306297A3 (en) 1990-06-13
CA1311547C (en) 1992-12-15
DE3855090D1 (de) 1996-04-18
ES2084583T3 (es) 1996-05-16
US4888062A (en) 1989-12-19
AU2167488A (en) 1989-03-02
DE3855090T2 (de) 1996-10-17
AU610231B2 (en) 1991-05-16
EP0306297B1 (de) 1996-03-13

Similar Documents

Publication Publication Date Title
ATE135497T1 (de) Photovoltaisches pin-bauelement mit einer i- halbleiterschicht aus znse oder znsete die wasserstoff in einer menge von 1 bis 4 atom-
ATE135849T1 (de) Photovoltaisches bauelement mit einer halbleiterschicht aus nichteinkristallinem stoff, welches zumindest zn,se und h in einer menge von 1 bis 4 atom enthält
Devaney et al. Structure and properties of high efficiency ZnO/CdZnS/CuInGaSe/sub 2/solar cells
DE3854040D1 (de) Photovoltaisches PIN-Bauelement, Tandem-und Triple-Zellen.
ATE178432T1 (de) Photovoltaische vorrichtung mit einem pin- übergang bestehend aus einer i(asi-ge)-schicht mit einem maximalen punkt für den ge-gehalt
EP0300798A3 (de) Zweckmässige ZnSe:H-niedergeschlagene Schicht
FR2549642B1 (fr) Cellule solaire
ATE124805T1 (de) Photovoltaisches pin-bauelement mit einer p- oder n-halbleiterschicht aus nicht einkristallinem stoff, welches zn, se, te, h in einer menge von 1 bis 4 atom und ein dotierelement enthält und eine i-halbleiterschicht aus nicht einkristallinem si(h,f).
Potter et al. Light-induced junction modification in (Cd, Zn) S/CuInSe 2 solar cells
Ehrenreich et al. Solar photovoltaic energy
Smestad Photoelectronic properties of semiconductors: by Richard H. Bube (Cambridge University Press, Cambridge, 1992). ISBN 0-521-40491-6 (hbk.), ISBN 0-521-40681-1 (pbk.); 318 pages; price US $69.95 hbk, $32.95 pbk.
Samanta et al. Mixed chalcopyrites as useful solar cell materials
EP0301903A3 (de) Funktionelle niedergeschlagene ZnSe1-xTeX: H-Schicht
Islam et al. Projected performance of InxGa1-xN-based multijunction solar cells
JPS6448468A (en) Photovoltaic cell
Luksetich The Photovoltaic Cell: History, Operation, Current Technology
Rothwarf Criteria for the design of high efficiency thin film solar cells: Theory and practice
JPS5638872A (en) Solar-cell power device
Loferski Thin film cadmium sulfide/mixed copper ternary heterojunction solar cells
Hill Solar cells: Prentice-Hall series in solid state physical electronics: by Martin A. Green; published by Prentice-Hall, Englewood Cliffs, NJ, 1982; xiv+ 274 pp.; price,£ 20.95; ISBN 0-13-822270-3
Gashin et al. Cascade heterophotocells using wide-gap A/II/B/VI/compounds
Mitsui et al. An AlGaAs/GaAs Concentrator Solar Cell Operating at High Concentration Ratios without Forced Cooling
Berkowitz et al. Proceedings of the International Symposium on Solar Energy
Makwana Biasing and illumination effects in thin film cadmium sulfide/cadmium telluride photovoltaic cells
Burton Photovoltaics

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties