JP2014519718A - ソーラー光起電システムのためのブースター被膜 - Google Patents
ソーラー光起電システムのためのブースター被膜 Download PDFInfo
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Abstract
【選択図】 図6
Description
Claims (23)
- ソーラーモジュールで使用するための構成要素であって、
透明なガラス基材と、
前記基材上に形成される薄膜光起電ブースターセルであって、前記ブースターセルが、n型層と、p型層とを含み、前記n型層が、多結晶硫化亜鉛(ZnS)を含み、少なくとも3.5eVのバンドギャップエネルギーを有し、前記p型層が、多結晶テルル化亜鉛(ZnTe)を含む、薄膜光起電ブースターセルと、
を含み、前記ブースターセルが、第1の波長範囲の太陽放射を吸収することによって電気を生成するように適合され、前記ブースターセルがまた、前記第1の波長範囲を超える第2の波長範囲の太陽放射を透過するようにも適合される、構成要素。 - 前記p型層が、少なくとも2eVのバンドギャップエネルギーを有する、請求項1に記載の構成要素。
- 前記p型層が、少なくとも2.2eVのバンドギャップエネルギーを有する、請求項2に記載の構成要素。
- 前記p型層が、2.2〜2.3eVの範囲のバンドギャップエネルギーを有する、請求項3に記載の構成要素。
- 前記n型層に、アルミニウム(Al)又は塩素(Cl)と共に前記多結晶ZnSがドープされ、前記p型層に、窒素(N)と共に前記多結晶ZnTeがドープされる、請求項1に記載の構成要素。
- 前記ブースターセルがまた、前記n型層と前記p型層との間に配置される真性層も含み、前記真性層が、多結晶ZnTeを含む、請求項1に記載の構成要素。
- 前記真性層が、2.2〜2.3eVの範囲のバンドギャップエネルギーを有する、請求項6に記載の構成要素。
- 前記真性層が、1000nm未満、又は100〜500nmの範囲の厚さを有する、請求項6に記載の構成要素。
- 前記ブースターセルが、前記基材上に形成されるブースターセルのアレイのうちの1個であり、前記ブースターセルのそれぞれが、多結晶ZnSを含むn型層と、多結晶ZnTeを含むp型層とを含む、請求項1に記載の構成要素。
- ソーラーモジュールであって、
請求項9に記載の構成要素と、
前記構成要素によって透過される太陽放射を受容するように配置される、光起電一次セルのアレイであって、前記一次セルがそれぞれ、前記第2の波長範囲の太陽放射を吸収することによって電気を生成するように適合される、光起電一次セルのアレイと、
を含む、ソーラーモジュール。 - 前記一次セルのアレイが、単結晶シリコン、多(マルチ)結晶シリコン、及び/又は多(ポリ)結晶テルル化カドミウムを含む、請求項10に記載のモジュール。
- ソーラーモジュールであって、
第1の波長範囲の太陽放射を吸収することによって電気を生成するように適合される、光起電ブースターセルのアレイであって、前記ブースターセルがまた、前記第1の波長範囲を超える第2の波長範囲の太陽放射を透過するようにも適合される、光起電ブースターセルのアレイと、
前記ブースターセルのアレイによって透過される太陽放射を受容するように配置される、光起電一次セルのアレイであって、前記一次セルがそれぞれ、前記第2の波長範囲の太陽放射を吸収することによって電気を生成するように適合される、光起電一次セルのアレイと、
を含み、前記ブースターセルが、多結晶テルル化亜鉛(ZnTe)を含み、
前記一次セルが、単結晶シリコン、多(マルチ)結晶シリコン、及び/又は多(ポリ)結晶テルル化カドミウムを含む、ソーラーモジュール。 - それぞれのブースターセルが、多結晶テルル化亜鉛(ZnTe)を含有し少なくとも2eVのバンドギャップエネルギーを有するp型層を含む、請求項12に記載のモジュール。
- それぞれのブースターセルの前記p型層が、少なくとも2.2eVのバンドギャップエネルギーを有する、請求項13に記載のモジュール。
- それぞれのブースターセルの前記p型層が、2.2〜2.3eVの範囲のバンドギャップエネルギーを有する、請求項14に記載のモジュール。
- それぞれのブースターセルが、多結晶硫化亜鉛(ZnS)を含むn型層と、多結晶テルル化亜鉛(ZnTe)を含むp型層とを含む、請求項12に記載のモジュール。
- 前記n型層が、少なくとも3.5eVのバンドギャップエネルギーを有し、前記p型層が、少なくとも2eVのバンドギャップエネルギーを有する、請求項16に記載のモジュール。
- 前記n型層に、アルミニウム(Al)又は塩素(Cl)と共に前記多結晶ZnSがドープされ、前記p型層に、窒素(N)と共に前記多結晶ZnTeがドープされる、請求項16に記載のモジュール。
- それぞれのブースターセルがまた、前記n型層と前記p型層との間に配置される真性層も含み、前記真性層が、多結晶ZnTeを含む、請求項16に記載のモジュール。
- 前記真性層が、1000nm未満、又は100〜500nmの範囲の厚さを有する、請求項19に記載のモジュール。
- 上部に前記ブースターセルのアレイが配置される第1のガラス基材と、
上部に前記一次セルのアレイが配置される第2の基材と、
を更に含む、請求項12に記載のモジュール。 - 前記一次セルが、単結晶シリコン、多(マルチ)結晶シリコン、及び/又は多(ポリ)結晶テルル化カドミウム(CdTe)を含む、請求項21に記載のモジュール。
- 前記ブースターセルのアレイが、前記一次セルのアレイと並列に接続される、請求項12に記載のモジュール。
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WO2023181733A1 (ja) * | 2022-03-25 | 2023-09-28 | 株式会社カネカ | スタック型太陽電池ストリング、太陽電池モジュール、および、太陽電池モジュールの製造方法 |
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JP6338990B2 (ja) * | 2014-09-19 | 2018-06-06 | 株式会社東芝 | 多接合型太陽電池 |
US11231382B2 (en) | 2016-06-15 | 2022-01-25 | William N. Carr | Integrated thermal sensor comprising a photonic crystal |
US11300453B2 (en) | 2017-06-18 | 2022-04-12 | William N. Carr | Photonic- and phononic-structured pixel for electromagnetic radiation and detection |
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CN109192804B (zh) * | 2018-09-06 | 2020-05-22 | 深圳市博大鑫电子有限公司 | 一种太阳能电池组件 |
CN109192803B (zh) * | 2018-09-06 | 2019-12-10 | 苏州市相城区黄桥工业园经济发展有限公司 | 一种太阳能电池组件 |
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