JPS5591888A - Germanium light recieving element - Google Patents

Germanium light recieving element

Info

Publication number
JPS5591888A
JPS5591888A JP16506578A JP16506578A JPS5591888A JP S5591888 A JPS5591888 A JP S5591888A JP 16506578 A JP16506578 A JP 16506578A JP 16506578 A JP16506578 A JP 16506578A JP S5591888 A JPS5591888 A JP S5591888A
Authority
JP
Japan
Prior art keywords
light receiving
sio
substrate
protective film
dark current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16506578A
Other languages
Japanese (ja)
Other versions
JPS6133265B2 (en
Inventor
Shuzo Kagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16506578A priority Critical patent/JPS5591888A/en
Publication of JPS5591888A publication Critical patent/JPS5591888A/en
Publication of JPS6133265B2 publication Critical patent/JPS6133265B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To reduce dark current and improve receiving sensitivity by using surface (111) of a germanium wafer as a light receiving surface, forming a pn-junction on this surface and coating it with a protective film of SiO2.
CONSTITUTION: Surface (111) of Ge wafer 1 is made into a light receiving surface, and a pn-junction is formed on this surface. This is provided with SiO2 protective film 3. A p-type Ge substrate 1 is provided with n+-type semiconductor layer 2, which is formed by diffusing Se or the like, on light receiving surface (111). The surface of this substrate is covered with protective film 3 made of SiO2, and electrode 4 and non-reflection coating film 5 are formed, and thereby Ge light receiving element (GeAPD) is made. In this GeAPD, surface recombination current flows in part 6a where depletion layer 6 expands in substrate 1, and dark current, independent of light projection, flows. Consequently, by choosing SiO2 film 3 of substrate 1 as light receiving surface (111), dark current can be reduced compared with the case when other surface directions are chosen.
COPYRIGHT: (C)1980,JPO&Japio
JP16506578A 1978-12-29 1978-12-29 Germanium light recieving element Granted JPS5591888A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16506578A JPS5591888A (en) 1978-12-29 1978-12-29 Germanium light recieving element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16506578A JPS5591888A (en) 1978-12-29 1978-12-29 Germanium light recieving element

Publications (2)

Publication Number Publication Date
JPS5591888A true JPS5591888A (en) 1980-07-11
JPS6133265B2 JPS6133265B2 (en) 1986-08-01

Family

ID=15805186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16506578A Granted JPS5591888A (en) 1978-12-29 1978-12-29 Germanium light recieving element

Country Status (1)

Country Link
JP (1) JPS5591888A (en)

Also Published As

Publication number Publication date
JPS6133265B2 (en) 1986-08-01

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