JPS56137684A - Photoelectric transducing element - Google Patents

Photoelectric transducing element

Info

Publication number
JPS56137684A
JPS56137684A JP4130380A JP4130380A JPS56137684A JP S56137684 A JPS56137684 A JP S56137684A JP 4130380 A JP4130380 A JP 4130380A JP 4130380 A JP4130380 A JP 4130380A JP S56137684 A JPS56137684 A JP S56137684A
Authority
JP
Japan
Prior art keywords
film
photoelectric transducing
photoelectric
group compound
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4130380A
Other languages
Japanese (ja)
Inventor
Koji Mori
Hideo Segawa
Koichi Sakurai
Masakuni Itagaki
Tatsumi Ishiwatari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP4130380A priority Critical patent/JPS56137684A/en
Publication of JPS56137684A publication Critical patent/JPS56137684A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Abstract

PURPOSE:To enable lengthening of the element and reduce leak current by constituting the same by using a photoelectric transducing layer consisting of two layers of films of II-VI group compound having different band gaps and an amorphous Si film. CONSTITUTION:A transparent electroconductive film 2 is formed through evaporation on a substrate 1 of phototransmissible material and thereon the photoelectric transducing layer is laminated. The photoelectric transducing layer 2 is constituted by laminating the film 3 of II-VI group compound having a relatively large band gap and the film 4 of II-VI group compound having a smaller band gap than the above in this order. Next, the amorphous Si film 5 is laminated on the photoelectric transducing film, and then an electrode couple 6 is formed on the film 5. The film 5 may be formed also between the film 2 and the film 3. By constituting the photoelectric transducing element in this way, the manufacturing processes therefor are facilitated and the lengthening thereof is made possible, while excellent photoelectric current characteristic with little leak current is obtained.
JP4130380A 1980-03-31 1980-03-31 Photoelectric transducing element Pending JPS56137684A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4130380A JPS56137684A (en) 1980-03-31 1980-03-31 Photoelectric transducing element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4130380A JPS56137684A (en) 1980-03-31 1980-03-31 Photoelectric transducing element

Publications (1)

Publication Number Publication Date
JPS56137684A true JPS56137684A (en) 1981-10-27

Family

ID=12604706

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4130380A Pending JPS56137684A (en) 1980-03-31 1980-03-31 Photoelectric transducing element

Country Status (1)

Country Link
JP (1) JPS56137684A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6329971A (en) * 1986-07-23 1988-02-08 Hamamatsu Photonics Kk Radiation image pickup device
EP0317343A2 (en) * 1987-11-20 1989-05-24 Canon Kabushiki Kaisha Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, Te, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material
CN107146850A (en) * 2016-03-01 2017-09-08 索尼公司 Image-forming component, cascade type image-forming component, solid state image pickup device and its driving method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6329971A (en) * 1986-07-23 1988-02-08 Hamamatsu Photonics Kk Radiation image pickup device
EP0317343A2 (en) * 1987-11-20 1989-05-24 Canon Kabushiki Kaisha Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, Te, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material
CN107146850A (en) * 2016-03-01 2017-09-08 索尼公司 Image-forming component, cascade type image-forming component, solid state image pickup device and its driving method
CN107146850B (en) * 2016-03-01 2024-01-16 索尼公司 Imaging element, laminated imaging element, solid-state imaging device, and driving method thereof

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