JPS5759380A - Thin film type thyristor - Google Patents

Thin film type thyristor

Info

Publication number
JPS5759380A
JPS5759380A JP13402680A JP13402680A JPS5759380A JP S5759380 A JPS5759380 A JP S5759380A JP 13402680 A JP13402680 A JP 13402680A JP 13402680 A JP13402680 A JP 13402680A JP S5759380 A JPS5759380 A JP S5759380A
Authority
JP
Japan
Prior art keywords
thin film
type semiconductor
semiconductor film
layered
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13402680A
Other languages
Japanese (ja)
Other versions
JPS637472B2 (en
Inventor
Kiyoshi Sone
Koji Mori
Masakuni Itagaki
Koichi Sakurai
Hideo Segawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP13402680A priority Critical patent/JPS5759380A/en
Publication of JPS5759380A publication Critical patent/JPS5759380A/en
Publication of JPS637472B2 publication Critical patent/JPS637472B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7317—Bipolar thin film transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only

Abstract

PURPOSE:To obtain a highly reliable thyristor which is readily manufactured in an arbitrary configuration by providing a p-n-p type thin film semicondudtor layer and an n-p-n type thin film semiconductor layer on the same insulating substrate, and forming a connecting part between both layers. CONSTITUTION:Metallic electrodes 4 and 5 are embedded in the insulating substrate 3 as lead electrodes for an input terminal 6 and an output terminal 7, respectively. Then, a p type semiconductor film 8 comprising CdTe is layered on the metallic electrodes 4 to a thickness of 1-3mum, and an n type semiconductor film 9 comprising CdS is layered on the metallic electrode 5 to a thickness of 1-5mum. Then, SiO2 films 10a, 10b, and 10c are deposited. A metallic electrode 11 and a gate terminal 12 are formed on 10a. Furthermore, CdTe and CdS are alternately layered, and the p-n-p structure and the n-p-n structure are constituted. Finally a p type semiconductor film 16 and a p type semiconductor film 15 are connected by a metallic electrode 18, and the thin film thyristor is obtained.
JP13402680A 1980-09-26 1980-09-26 Thin film type thyristor Granted JPS5759380A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13402680A JPS5759380A (en) 1980-09-26 1980-09-26 Thin film type thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13402680A JPS5759380A (en) 1980-09-26 1980-09-26 Thin film type thyristor

Publications (2)

Publication Number Publication Date
JPS5759380A true JPS5759380A (en) 1982-04-09
JPS637472B2 JPS637472B2 (en) 1988-02-17

Family

ID=15118633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13402680A Granted JPS5759380A (en) 1980-09-26 1980-09-26 Thin film type thyristor

Country Status (1)

Country Link
JP (1) JPS5759380A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS616864A (en) * 1984-06-21 1986-01-13 Matsushita Electric Ind Co Ltd Thin-film photo-thyristor
EP1134811A1 (en) * 1998-11-17 2001-09-19 Japan Science and Technology Corporation Transistor and semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS616864A (en) * 1984-06-21 1986-01-13 Matsushita Electric Ind Co Ltd Thin-film photo-thyristor
EP1134811A1 (en) * 1998-11-17 2001-09-19 Japan Science and Technology Corporation Transistor and semiconductor device
EP1134811A4 (en) * 1998-11-17 2005-09-14 Japan Science & Tech Agency Transistor and semiconductor device

Also Published As

Publication number Publication date
JPS637472B2 (en) 1988-02-17

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